Memory device
A memory device includes a first interconnect extending in a first direction, a first and a second semiconductor members extending in a second direction, a first and a second gate lines extending in a third direction, a second and a third interconnects extending in the second direction. The first and the second semiconductor members are arranged along the first direction, with first ends in the second direction connected to the first interconnect. The second interconnect is connected to a second end in the second direction of the first semiconductor member. The third interconnect is connected to a second end in the second direction of the second semiconductor member. The distance between the first interconnect and the first gate line is longer than the distance between the first interconnect and the second gate line.
1. A memory device comprising:
a first interconnect extending in a first direction;
a first semiconductor member and a second semiconductor member arranged along the first direction and extending in a second direction crossing the first direction, with first ends in the second direction connected to the first interconnect;
a first gate line extending in a third direction crossing a plane including the first direction and the second direction;
a second gate line extending in the third direction;
a second interconnect connected to a second end in the second direction of the first semiconductor member and extending in the second direction;
a third interconnect connected to a second end in the second direction of the second semiconductor member and extending in the second direction;
a fourth interconnect; and
a first resistance change film connected between the second interconnect and the fourth interconnect,
distance between the first semiconductor member and the first gate line being shorter than distance between the first semiconductor member and the second gate line,
distance between the second semiconductor member and the second gate line being shorter than distance between the second semiconductor member and the first gate line,
distance between the first interconnect and the first gate line being longer than distance between the first interconnect and the second gate line, and
no conductive member or semiconductor member being interposed on a straight line extending in the second direction and connecting between an edge on the first semiconductor member side of the first gate line and the first interconnect.
2. The device according to claim 1 , wherein
no conductive member or semiconductor member is placed between the first semiconductor member and the second gate line adjacent to each other, and
no conductive member or semiconductor member is placed between the second semiconductor member and the first gate line adjacent to each other.
3. The device according to claim 1 , further comprising:
a first gate insulating film provided between the first semiconductor member and the first gate line; and
an interconnect-to-interconnect insulating film provided between the first semiconductor member and the second gate line,
wherein density of the first gate insulating film is higher than density of the interconnect-to-interconnect insulating film.
4. The device according to claim 3 , further comprising:
a second gate insulating film provided between the second semiconductor member and the second gate line,
wherein density of the second gate insulating film is higher than the density of the interconnect-to-interconnect insulating film.
5. The device according to claim 1 , wherein as viewed in the second direction, a part of the first gate line and a part of the second gate line overlap each other.
6. The device according to claim 1 , wherein as viewed in the second direction, the first gate line surrounds the first semiconductor member, and the second gate line surrounds the second semiconductor member.
7. The device according to claim 1 , wherein
a first portion including the first end and a second portion including the second end in the first semiconductor member are of a first conductivity type, and
a third portion between the first portion and the second portion in the first semiconductor member is of a second conductivity type.
8. The device according to claim 7 , wherein the first gate line surrounds the third portion.
9. The device according to claim 1 , wherein the fourth interconnect extends in the third direction.
10. The device according to claim 1 , further comprising:
a second resistance change film connected between the third interconnect and the fourth interconnect.
11. The device according to claim 1 , wherein curvature of a corner part between an upper surface and a side surface of the second gate line is smaller than curvature of a corner part between a lower surface and the side surface of the second gate line.
12. The device according to claim 1 , further comprising:
a control circuit,
wherein the control circuit includes:
a first circuit configured to apply a first potential to the first gate line; and
a second circuit configured to apply a second potential to the second gate line,
the first potential causes a transistor formed between the first semiconductor member and the first gate line to conduct, and
the second potential causes a transistor formed between the second semiconductor member and the second gate line to conduct.
13. The device according to claim 12 , wherein
a conductivity type of a first portion including the first end and a conductivity type of a second portion including the second end in the first semiconductor member are an n-type, and
a conductivity type of a third portion between the first portion and the second portion in the first semiconductor member is a p-type.
14. The device according to claim 13 , wherein the control circuit makes the first potential higher than the second potential when passing a current from the second interconnect toward the first interconnect and passing a current from the third interconnect toward the first interconnect.