Semiconductor device having asymmetric spacer structures
A semiconductor device including a semiconductor substrate, agate on the semiconductor substrate, a drain doping region in the semiconductor substrate on a first side of the gate, a source doping region in the semiconductor substrate on a second side of the gate, a first spacer structure on a first sidewall of the gate between the gate and the drain doping region, and a second spacer structure on a second sidewall of the gate between the gate and the source doping region. The first spacer structure is composed of a low-k dielectric layer on the first sidewall of the gate and a first spacer material layer on the low-k dielectric layer. The second spacer structure is composed of a second spacer material layer on the second sidewall of the gate.
1. A semiconductor device, comprising:
a semiconductor substrate;
a gate on the semiconductor substrate;
a drain doping region in the semiconductor substrate on a first side of the gate;
a source doping region in the semiconductor substrate on a second side of the gate;
a first spacer structure on a first sidewall of the gate between the gate and the drain doping region, wherein the first spacer structure comprises a low-k dielectric layer on the first sidewall of the gate and a first spacer material layer on the low-k dielectric layer, a first seal layer between the gate and the low-k dielectric layer, wherein the first seal layer is in direct contact with the low-k dielectric layer; and
a second spacer structure on a second sidewall of the gate between the gate and the source doping region, wherein the second spacer structure comprises a second spacer material layer on the second sidewall of the gate, a second seal layer between the gate and the second spacer material layer, wherein the second seal layer is in direct contact with the second spacer material layer, wherein the low-k dielectric layer has a dielectric constant that is smaller than that of the first spacer material layer or the second spacer material layer, wherein the semiconductor device is a singular device.
2. The semiconductor device according to claim 1 , wherein the first seal layer comprises silicon nitride and the second seal layer comprises silicon nitride.
3. The semiconductor device according to claim 1 , wherein the low-k dielectric layer is in direct contact with the first spacer material layer.
4. The semiconductor device according to claim 1 further comprising a contact etch stop layer covering the first spacer material layer and the second spacer material layer, wherein the contact etch stop layer has a horizontal section covering an entire top surface of a first epitaxial layer.
5. The semiconductor device according to claim 1 , wherein the contact etch stop layer comprises silicon nitride.
6. The semiconductor device according to claim 1 , wherein the dielectric constant of the low-k dielectric layer is smaller than or equal to 5.
7. The semiconductor device according to claim 1 , wherein the low-k dielectric layer comprises silicon oxycarbonitride (SiOCN) or black diamond.
8. The semiconductor device according to claim 1 , wherein the first spacer material layer comprises silicon nitride or silicon carbonnitride.
9. The semiconductor device according to claim 8 , wherein the second spacer material layer comprises silicon nitride or silicon carbonnitride.
10. The semiconductor device according to claim 1 further comprising a first lightly doped drain (LDD) region directly under the first spacer structure and a second lightly doped drain (LDD) region directly under the second spacer structure.