Metal-doped graphene and growth method of the same
A metal-doped graphene and a growth method of the same are provided. The metal-doped graphene includes graphene and metal elements, wherein the metal elements accounts for 1-30 at % based on the total content of the metal-doped graphene. The growth method includes performing a PECVD by using a carbon precursor, a metal precursor, and a group VI precursor in order to grow the metal-doped graphene.
1. A method of growing metal-doped graphene, comprising the steps of:
providing a carbon precursor, a metal precursor, and a group VI precursor;
adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and
performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum chloride, ferric chloride or palladium dichloride.
2. The method of growing metal-doped graphene as claimed in claim 1 , wherein the carbon precursor comprises hydrocarbon gas.
3. The method of growing metal-doped graphene as claimed in claim 1 , wherein the carbon precursor is provided at a flow rate of 1 sccm-100 sccm.
4. The method of growing metal-doped graphene as claimed in claim 1 , wherein the group VI precursor comprises sulfur, oxygen or selenium.
5. The method of growing metal-doped graphene as claimed in claim 1 , wherein an amount of the metal precursor and the group VI precursor is independently between 10 mg and 1000 mg.
6. The method of growing metal-doped graphene as claimed in claim 1 , wherein a flame temperature is less than 500° C. during the microwave plasma torch (MPT) chemical vapor deposition process.
7. The method of growing metal-doped graphene as claimed in claim 1 , wherein a microwave power ranges from 100 W to 2000 W during the micro plasma torch (MPT) chemical vapor deposition process.
8. The method of growing metal-doped graphene as claimed in claim 1 , wherein a deposition time ranges from 0.5 min to 10 min during the micro plasma torch (MPT) chemical vapor deposition process.
9. The method of growing metal-doped graphene as claimed in claim 1 , wherein a working pressure ranges from 0.001 torr to 300 torr during the micro plasma torch (MPT) chemical vapor deposition process.
10. The method of growing metal-doped graphene as claimed in claim 1 , wherein the step of forming the metal-doped graphene comprises growing graphene and doping metal at the same time.
11. The method of growing metal-doped graphene as claimed in claim 1 , wherein the step of forming the metal-doped graphene further comprises providing inert gas.
12. The method of growing metal-doped graphene as claimed in claim 1 , wherein the step of forming the metal-doped graphene further comprises doping nitrogen.
13. A method of growing metal-doped graphene, comprising the steps of:
providing a carbon precursor, a metal precursor, and a group VI precursor;
adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and
performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor n order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a flame temperature is less than 500° C. during the microwave plasma torch (MPT) chemical vapor deposition process.
14. A method of growing metal-doped graphene, comprising the steps of:
providing a carbon precursor, a metal precursor, and a group VI precursor;
adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and
performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a microwave power ranges from 100 W to 2000 W during the micro plasma torch (MPT) chemical vapor deposition process.
15. A method of growing metal-doped graphene, comprising the steps of:
providing a carbon precursor, a metal precursor, and a group VI precursor;
adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and
performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a deposition time ranges from 0.5 min to 10 min during the micro plasma torch (MPT) chemical vapor deposition process.
16. A method of growing metal-doped graphene, comprising the steps of:
providing a carbon precursor, a metal precursor, and a group VI precursor;
adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and
performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a working pressure ranges from 0.001 torr to 300 torr during the micro plasma torch (MPT) chemical vapor deposition process.