Discharge circuit and semiconductor memory device

1. A discharge circuit comprising:

first and second transistors of a first polarity;

third and fourth transistors of a second polarity different from the first polarity;

a first current source having a first end electrically connected to a first end of the third transistor and a second end supplied with a first voltage; and

a second current source having a first end electrically connected to a first end of the fourth transistor and a second end supplied with the first voltage, wherein

a first end of the first transistor is supplied with a second voltage higher than the first voltage,

a first end of the second transistor is electrically separated from the first end of the first transistor,

a gate and a second end of the first transistor, a gate of the second transistor, and a second end of the third transistor are electrically connected to one another, and

a second end of the second transistor, a gate of the third transistor, and a second end and a gate of the fourth transistor are electrically connected to one another.

2. The discharge circuit according to claim 1 , wherein

a current that flows through the second current source is greater than a current that flows through the first current source.

3. The discharge circuit according to claim 2 , wherein

a size of the second transistor is different from a size of the first transistor, and

a size of the fourth transistor is different from a size of the third transistor.

4. The discharge circuit according to claim 3 , wherein

a ratio of the size of the second transistor to the size of the first transistor and a ratio of the size of the fourth transistor to the size of the third transistor are each equal to a ratio of the current that flows through the second current source to the current that flows through the first current source.

5. The discharge circuit according to claim 1 , further comprising:

a fifth transistor that includes a first end electrically connected to the gate of the first transistor and a second end electrically connected to the first end of the first current source; and

a sixth transistor that includes a first end electrically connected to the second end of the first current source and the second end of the second current source and a second end supplied with the first voltage, wherein

the first current source and the second current source are supplied with the first voltage via the sixth transistor.

6. The discharge circuit according to claim 1 , wherein

the second transistor is one of a plurality of transistors connected in parallel between first and second nodes, the first node being electrically connected to the first end of the second transistor and the second node being electrically connected to the second end of the second transistor.

7. The discharge circuit according to claim 6 , wherein

the fourth transistor is one of a plurality of transistors connected in parallel between third and fourth nodes, the third node being electrically connected to the first end of the fourth transistor and the fourth node being electrically connected to the second end of the fourth transistor.

8. The discharge circuit according to claim 1 , wherein

the first transistor has a back gate that is electrically connected to the first end thereof and the second transistor has a back gate this is electrically connected to the first end thereof.

9. The discharge circuit according to claim 1 , wherein the first polarity is a p-type polarity and the second polarity is an n-type polarity.

10. A semiconductor memory device comprising:

a plurality of blocks of memory cells; and

a row decoder supplied with a voltage from a power supply, the row decoder including a plurality of block decoders each corresponding to one of the blocks, each of the block decoders including a regulator circuit and a discharge circuit comprising

first and second transistors of a first polarity;

third and fourth transistors of a second polarity different from the first polarity;

a first current source having a first end electrically connected to a first end of the third transistor and a second end supplied with a first voltage; and

a second current source having a first end electrically connected to a first end of the fourth transistor and a second end supplied with the first voltage, wherein

a first end of the first transistor is supplied with a second voltage higher than the first voltage,

a first end of the second transistor is electrically separated from the first end of the first transistor and is electrically connected to the power supply through the regulator circuit,

a gate and a second end of the first transistor, a gate of the second transistor, and a second end of the third transistor are electrically connected to one another, and

a second end of the second transistor, a gate of the third transistor, and a second end and a gate of the fourth transistor are electrically connected to one another.

11. The semiconductor memory device according to claim 10 , wherein

the regulator circuit is in active state during an operation performed on the memory cells and in an inactive state when not performing an operation on the memory cells, and

the regulator circuit, during the active state, supplies a third voltage higher than the second voltage to a node that is electrically connected to the first end of the second transistor and, during the inactive state, electrically isolates the node from the power supply.

12. The discharge circuit according to claim 11 , wherein

a current that flows through the second current source is greater than a current that flows through the first current source.

13. The discharge circuit according to claim 12 , wherein

a size of the second transistor is different from a size of the first transistor, and

a size of the fourth transistor is different from a size of the third transistor.

14. The discharge circuit according to claim 13 , wherein

a ratio of the size of the second transistor to the size of the first transistor and a ratio of the size of the fourth transistor to the size of the third transistor are each equal to a ratio of the current that flows through the second current source to the current that flows through the first current source.

15. The discharge circuit according to claim 11 , wherein the discharge circuit further comprises:

a fifth transistor that includes a first end electrically connected to the gate of the first transistor and a second end electrically connected to the first end of the first current source; and

a sixth transistor that includes a first end electrically connected to the second end of the first current source and the second end of the second current source and a second end supplied with the first voltage, wherein

the first current source and the second current source are supplied with the first voltage via the sixth transistor.

16. The discharge circuit according to claim 11 , wherein

the second transistor is one of a plurality of transistors connected in parallel between first and second nodes, the first node being electrically connected to the first end of the second transistor and the second node being electrically connected to the second end of the second transistor.

17. The discharge circuit according to claim 16 , wherein

the fourth transistor is one of a plurality of transistors connected in parallel between third and fourth nodes, the third node being electrically connected to the first end of the fourth transistor and the fourth node being electrically connected to the second end of the fourth transistor.

18. The discharge circuit according to claim 11 , wherein

the first transistor has a back gate that is electrically connected to the first end thereof and the second transistor has a back gate this is electrically connected to the first end thereof.

19. The discharge circuit according to claim 11 , wherein the first polarity is a p-type polarity and the second polarity is an n-type polarity.

20. The discharge circuit according to claim 10 , wherein the first polarity is a p-type polarity and the second polarity is an n-type polarity.