Semiconductor device
A semiconductor device includes two or more semiconductor elements, a lead with island portions on which the semiconductor elements are mounted, a heat dissipation member for dissipating heat from the island portions, a bonding layer bonding the island portions and the heat dissipation member, and a sealing resin covering the semiconductor elements, the island portions and a part of the heat dissipation member. The bonding layer includes mutually spaced individual regions provided for the island portions, respectively.
1. A semiconductor device comprising:
a semiconductor element;
a lead on which the semiconductor element is mounted;
a wire electrically connected to the semiconductor element; and
a reinforcing bonding portion,
wherein the wire includes a first bonding portion and a second bonding portion, the second bonding portion spaced apart from the first bonding portion along a length of the wire, the second bonding portion gradually reducing in thickness from a boundary provided by a stepped portion, the reinforcing bonding portion overlapping with at least a part of the second bonding portion and exposing the stepped portion,
wherein the reinforcing bonding portion includes a disk portion held in contact with the second bonding portion, a tapering portion connected to the disk portion, a columnar portion connected to the tapering portion, and a peak portion formed on the columnar portion.
2. The semiconductor device according to claim 1 , wherein the columnar portion is smaller in diameter than the disk portion and concentric with the disk portion.
3. The semiconductor device according to claim 1 , further comprising:
a circular trace that is formed by a pressed capillary and located close to the second bonding portion.
4. The semiconductor device according to claim 3 , wherein a part of the circular trace is exposed from the reinforcing bonding portion.
5. The semiconductor device according to claim 4 , wherein the reinforcing bonding portion covers at least a half of the circular trace which is on a side closer to the second bonding portion.
6. The semiconductor device according to claim 1 , wherein the first bonding portion is bonded to the semiconductor element.
7. The semiconductor device according to claim 6 , further comprising:
an additional semiconductor element, wherein the second bonding portion is bonded to the additional semiconductor element.
8. The semiconductor device according to claim 6 , wherein the second bonding portion is bonded to the lead.
9. The semiconductor device according to claim 1 , wherein the wire is made of Au.
10. The semiconductor device according to claim 1 , further comprising:
a sealing resin, wherein the lead includes an island portion supporting the semiconductor element and formed with a plurality of recesses, and the sealing resin covers the semiconductor element and the island portion.
11. The semiconductor device according to claim 10 , wherein the island portion comprises a smooth surface overlapping with the semiconductor element.
12. The semiconductor device according to claim 10 , wherein each of the recesses is circular in cross section.
13. The semiconductor device according to claim 10 , wherein the recesses are disposed around the semiconductor element.
14. The semiconductor device according to claim 10 , wherein the recesses are arranged in a matrix.
15. The semiconductor device according to claim 14 , wherein the recess are arranged at same intervals.
16. The semiconductor device according to claim 10 , wherein the lead includes a pad portion with no semiconductor element mounted thereon and with a wire connected thereto, the pad portion being formed with a plurality of recesses.
17. The semiconductor device according to claim 10 , further comprising:
a bonding material that bonds a bottom surface of the semiconductor element to the island portion, wherein the bottom surface of the semiconductor element has a higher wettability to the bonding material in a molten state than the island portion,
wherein the island portion is formed with a trench disposed on an outer side of the semiconductor element, and
wherein the bonding material is disposed inward of the trench.
18. The semiconductor device according to claim 1 , wherein the tapering portion becomes narrower toward the columnar portion and has a minimum diameter equal to a diameter of the columnar portion.
19. The semiconductor device according to claim 18 , wherein the peak portion has a maximum diameter that is smaller than the diameter of the columnar portion.
20. The semiconductor device according to claim 1 , wherein the peak portion has an end part that becomes narrower with increasing distance from the columnar portion.