Display device using semiconductor light emitting device and fabrication method thereof
A display device including a growth substrate; a plurality of semiconductor light emitting devices grown on the growth substrate and disposed on one surface of the growth substrate; a plurality of through holes passing through the growth substrate at positions overlapping with the semiconductor light emitting devices; a wavelength conversion material filled into the through holes to convert a wavelength of light emitted from corresponding semiconductor light emitting devices; and a wiring substrate electrically connected to an electrode of the semiconductor light emitting devices disposed at an opposite side of the growth substrate by interposing the semiconductor light emitting devices therebetween.
1. A display device, comprising:
a growth substrate;
a plurality of semiconductor light emitting devices grown on the growth substrate and disposed on one surface of the growth substrate;
a plurality of through holes passing through the growth substrate at positions overlapping with the semiconductor light emitting devices;
a wavelength conversion material filled into the through holes to convert a wavelength of light emitted from corresponding semiconductor light emitting devices;
a wiring substrate electrically connected to an electrode of the semiconductor light emitting devices disposed at an opposite side of the growth substrate by interposing the semiconductor light emitting devices therebetween;
a reflective layer formed on an inner wall of a corresponding through hole; and
a protective layer filled between the semiconductor light emitting devices formed on the one surface of the growth substrate,
wherein at least part of a corresponding through hole overlaps with the protective layer in a thickness direction of the growth substrate, and
wherein reflective particles are mixed into the protective layer.
2. The display device of claim 1 , wherein the semiconductor light emitting devices comprise gallium nitride, and the growth substrate is configured to grow the gallium nitride.
3. The display device of claim 1 , wherein the growth substrate comprises a silicon material to enable etching for the through holes.
4. The display device of claim 1 , wherein the wavelength conversion material comprises a phosphor surrounded by the reflective layer.
5. The display device of claim 1 , wherein the reflective layer is formed to completely cover the inner wall of the corresponding through hole.
6. The display device of claim 1 , further comprising:
a plurality of color filters for filtering light emitted from the wavelength conversion material disposed on the other surface of the growth substrate to overlap with the through holes.
7. The display device of claim 6 , further comprising:
a black matrix covering the other surface of the growth substrate disposed between the color filters.
8. The display device of claim 1 , wherein one surface of a corresponding semiconductor light emitting device closest to the through hole includes a textured surface.
9. The display device of claim 1 , wherein the growth substrate comprises a plurality of unit substrates to which at least three semiconductor light emitting devices are attached, and
wherein the unit substrates are arranged at preset intervals on the wiring substrate.