Uniform threshold voltage for nanosheet devices

1. A method of forming a nanosheet structure having a uniform threshold voltage (Vt), the method comprising:

forming a conductive barrier surrounding a nanosheet structure including a plurality of nanosheets;

forming a first work function conducting layer over the conductive barrier;

forming a conducting layer surrounding the first work function conducting layer, the conducting layer defining a first region and a second region being different than the first region; and

forming a second work function conducting layer around the nanosheet structure including the plurality of nanosheets and over the second region of the conducting layer to obtain a same threshold voltage for the first and second regions of the conducting layer.

2. The method of claim 1 , wherein the conductive barrier is composed of a metal nitride, such as titanium nitride (TiN), tantalum nitride (TaN), or tungsten nitride (WN), or a carbide, such as titanium carbide (TiC) or tantalum carbide (TaC).

3. The method of claim 1 , wherein the conducting layer can be a nitride, such as titanium nitride (TiN), tantalum nitride (TaN), or tungsten nitride (WN), or a carbide, such as titanium carbide (TiC) or tantalum carbide (TaC).

4. The method of claim 3 , wherein the first and second work function conducting layers are one of Ti (titanium), Al (aluminum), TaAl (tatanium aluminum), TiAl (titanium aluminum), TaAlC (tatanium aluminum carbon), and TiAlC (titanium aluminum carbon)) or combination of them.

5. The method of claim 4 , wherein the second work function conducting layer is surrounded by a conducting layer such as a metal nitride like titanium nitride (TiN), tantalum nitride (TaN), or tungsten nitride (WN), or a carbide like titanium carbide (TiC) or tantalum carbide (TaC), or a pure metal like nickel (N) or tungsten (W).

6. The method of claim 1 , wherein an interfacial layer (IL) is grown between the nanosheet structure and the conductive barrier.

7. The method of claim 6 , wherein a high-k material is deposited between the IL and the conductive barrier.

8. The method of claim 1 , wherein a thickness of the first region of the conducting layer is thinner or thicker than the second region of the conducting layer, but the thickness of the first region is not thicker than a double thickness of the second region of the conducting layer.

9. A method of forming a nanosheet structure having a uniform threshold voltage (Vt), the method comprising:

forming a conductive barrier surrounding a nanosheet structure including a plurality of nanosheets;

forming a first work function conducting layer over the conductive barrier; and

forming a conducting layer defining an inner sheet and an outer sheet having a uniform threshold voltage within a second work function conducting layer defined around the nanosheet structure including the plurality of nanosheets, the conducting layer surrounding the first work function conducting layer, the first work function conducting layer having a thickness greater than a thickness of the conducting layer.

10. The method of claim 9 , wherein the conductive barrier is a metal nitride, such as titanium nitride (TiN), tantalum nitride (TaN), or tungsten nitride (WN), or a carbide, such as titanium carbide (TiC) or tantalum carbide (TaC).

11. The method of claim 9 , wherein the first work function conducting layer is one of Ti (titanium), Al (aluminum), TaAl (tatanium aluminum), TiAl (titanium aluminum), TaAlC (tatanium aluminum carbon), and TiAlC (titanium aluminum carbon)) or combination of them.

12. The method of claim 9 , wherein the conducting layer surrounding the first work function conducting layer is a metal nitride like titanium nitride (TiN), tantalum nitride (TaN), or tungsten nitride (WN), or a carbide like titanium carbide (TiC) or tantalum carbide (TaC), or a pure metal like nickel (N) or tungsten (W).

13. The method of claim 9 , wherein an IL is grown between the nanosheet structure and the conductive barrier.

14. The method of claim 13 , wherein a high-k material is deposited between the IL and the conductive barrier.

15. A nanosheet structure having a uniform threshold voltage (Vt), the structure comprising:

a conductive barrier surrounding a nanosheet structure including a plurality of nanosheets;

a first work function conducting layer formed over the conductive barrier;

a conducting layer surrounding the first work function conducting layer, the conducting layer defining a first region and a second region being different than the first region; and

a second work function conducting layer formed around the nanosheet structure including the plurality of nanosheets and over the second region of the conducting layer to obtain a same threshold voltage for the first and second regions of the conducting layer.

16. The structure of claim 15 , wherein the first and second work function conducting layers are nWFMs, such as Ti (titanium), Al (aluminum), TaAl (tatanium aluminum), TiAl (titanium aluminum), TaAlC (tatanium aluminum carbon), and TiAlC (titanium aluminum carbon)) or combination of them.

17. The structure of claim 15 , wherein the second work function conducting layer is surrounded by a conductive barrier, such as a metal nitride like titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), or a carbide like titanium carbide (TiC) or tantalum carbide (TaC).

18. The structure of claim 15 , wherein an IL is grown between the nanosheet structure and the conductive barrier.

19. The structure of claim 18 , wherein a high-k material is deposited between the IL and the conductive barrier.

20. The structure of claim 15 , wherein a thickness of the first region of the conducting layer is thinner or thicker than the second region of the conducting layer, but the thickness of the first region is not thicker than a double thickness of the second region of the conducting layer.