Light emitting device and light emitting device package
Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.
1. A light emitting device comprising:
a light emitting structure including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer;
a transmissive electrode layer including a metal oxide layer on the second conductivity type semiconductor layer;
an insulating layer on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
a first electrode on the first conductivity type semiconductor; and
a second electrode on the second conductivity type semiconductor layer, wherein a first portion of the transmissive electrode layer is spaced apart from a first outer edge of the insulating layer on the second conductivity type semiconductor layer, wherein the insulating layer includes a first portion and a first extension portion, wherein the first portion of the insulating layer contacts the first electrode, wherein the extension portion of the insulating layer extends from the first portion of the insulating layer to a first location outside of an outer edge of the first electrode, wherein the first electrode includes a first portion and a second portion, wherein the first portion of the first electrode contacts the first conductivity type semiconductor layer and has an area of 10% to 95% of a top surface of the first electrode, and wherein the second portion of the first electrode is disposed on the insulating layer.
2. The light emitting device of claim 1 , wherein at least one portion of the second conductivity type semiconductor layer is exposed between the transmissive electrode layer and the first outer edge of the insulating layer on the second conductivity type semiconductor layer.
3. The light emitting device of claim 1 , wherein the insulating layer comprises at least one of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , TiO 2 , or Al 2 O 3 , and wherein the insulating layer comprises a roughness structure on a top surface or a bottom surface thereof.
4. The light emitting device of claim 1 , wherein the first extension portion of the insulating layer extends from the a top surface of the first conductivity type semiconductor layer to a portion of a top surface of the second conductivity type semiconductor layer along a lateral surface of the light emitting structure.
5. The light emitting device of claim 1 , wherein the second electrode is disposed on the transmissive electrode layer and the second conductivity type semiconductor layer.
6. The light emitting device of claim 1 , wherein the transmissive electrode layer has a single layer structure or a multiple layer structure.
7. The light emitting device of claim 1 , wherein the first electrode has a multiple layer structure including Al, Cr, Ni, or Au and a uppermost layer of the first electrode has Au.
8. The light emitting device of claim 1 , wherein the second electrode overlaps with the transmissive electrode layer in a vertical direction.
9. The light emitting device claim 1 , wherein the transmissive electrode layer is disposed on a region of the second conductivity type semiconductor, and wherein the region of the second conductivity type semiconductor excludes the insulating layer.
10. The light emitting device of claim 1 , wherein the second electrode has a single layer structure or a multiple layer structure including at least one of Au, Al, Ag, Ti, Cu, Ni or Cr.
11. The light emitting device of claim 1 , wherein a second portion of transmissive electrode layer is disposed under the second electrode.
12. The light emitting device of claim 1 , wherein the transmissive electrode layer comprises a single layer structure or a multiple layer structure including at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO x , or RuO x .
13. The light emitting device of claim 1 , wherein a portion of the light emitting structure comprises a first rounded side surface.
14. The lighting device of claim 13 , wherein the insulating layer covers the first rounded side surface.
15. A light emitting device comprising:
a light emitting structure including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer;
a transmissive electrode layer including a metal oxide layer on the second conductivity type semiconductor layer;
an insulating layer on the first conductivity type semiconductor layer;
a first electrode on the first conductivity type semiconductor; and
a second electrode on the second conductivity type semiconductor layer, wherein a first portion of the transmissive electrode layer is spaced apart from one end of the insulating layer, wherein the first electrode includes a first portion and a second portion, wherein the first portion of the first electrode contacts the first conductivity type semiconductor layer and the second portion of the first electrode extends from the first portion of the first electrode to a first top surface of the insulating layer, wherein the insulating layer includes a first extension portion that extends from the first top surface of the insulating layer to a first location outside outer edge of the first electrode, and wherein the first portion of the first electrode has an area of 10% to 95% of a top surface of the first electrode.
16. The light emitting device of claim 15 , wherein the insulating layer comprises at least one of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , TiO 2 , or Al 2 O 3 , and wherein the insulating layer comprises a roughness structure on a top surface or a bottom surface thereof.
17. The light emitting device of claim 15 , wherein a portion of the light emitting structure comprises a first rounded side surface.
18. The light emitting device of claim 15 , wherein the transmissive electrode layer comprises a single layer structure or a multiple layer structure including at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, and RuOx.
19. The light emitting device claim 15 , wherein the transmissive electrode layer is disposed on a region of the second conductivity type semiconductor, and wherein the region of the second conductivity type semiconductor excludes the insulating layer.
20. The light emitting device of claim 15 , wherein a second portion of transmissive electrode layer is disposed under the second electrode.