Methods of forming integrated circuit structures including opening filled with insulator in metal gate
The disclosure is directed to methods of forming an integrated circuit structure. One method may include: forming a metal gate within a dielectric layer over a substrate; forming an opening within the metal gate; recessing the metal gate such that a height of the metal gate is reduced; forming an insulator over the recessed metal gate and filling the opening; and planarizing the insulator to a top surface of the dielectric layer.
1. A method of forming an integrated circuit structure, the method comprising:
forming a metal gate within a dielectric layer over a substrate;
forming an opening within the metal gate;
filling the opening with a mask;
recessing the metal gate such that a height of the metal gate is reduced;
removing the mask from the opening;
forming an insulator over the recessed metal gate and filling the opening with the insulator; and
planarizing the insulator to a top surface of the dielectric layer.
2. The method of claim 1 , wherein the recessing of the metal gate is performed prior to the forming of the opening, and wherein the opening is formed within the recessed metal gate.
3. The method of claim 1 , wherein the recessing of the metal gate includes recessing the metal gate to a height that is less than a height of the mask.
4. The method of claim 1 , wherein the insulator isolates one portion of the metal gate from another portion of the metal gate.
5. The method of claim 1 , wherein the forming of the insulator includes simultaneously forming the insulator over the recessed metal gate and filling the opening with the insulator.
6. The method of claim 1 , wherein the planarizing of the insulator includes simultaneously planarizing the insulator that is over the recessed metal gate and the insulator that is filling the opening.
7. The method of claim 1 , wherein the forming of the insulator includes forming a stack of insulator materials.
8. The method of claim 7 , wherein the forming of the stack of insulator materials includes:
depositing a first silicon nitride layer via atomic layer deposition (ALD);
depositing a second silicon nitride layer via ALD; and
depositing a third silicon nitride layer via high-density plasma (HDP) chemical vapor deposition (CVD).
9. A method of forming an integrated circuit structure, the method comprising:
removing a dummy gate from between a pair of spacers over a substrate within a dielectric layer;
forming a replacement metal gate between the pair of spacers over the substrate;
forming an opening within the replacement metal gate thereby exposing the substrate thereunder;
recessing the replacement metal gate such that a height of the replacement metal gate is reduced;
forming an insulator over the recessed replacement metal gate and filling the opening with the insulator; and
planarizing the insulator to a top surface of the dielectric layer.
10. The method of claim 9 , wherein the recessing of the replacement metal gate is performed prior to the forming of the opening, and wherein the opening is formed within the recessed replacement metal gate.
11. The method of claim 9 , wherein the insulator isolates one portion of the metal gate from another portion of the metal gate.
12. The method of claim 9 , further comprising:
planarizing the replacement metal gate after the forming of the replacement metal gate and prior to the forming of the opening.
13. The method of claim 9 , wherein the forming of the insulator includes simultaneously forming the insulator over the recessed metal gate and filling the opening with the insulator.
14. The method of claim 9 , wherein the planarizing of the insulator includes simultaneously planarizing the insulator that is over the recessed metal gate and the insulator that is filling the opening.
15. The method of claim 9 , wherein the forming of the replacement metal gate includes forming a metal layer over a work function metal layer.
16. The method of claim 9 , further comprising:
after the forming of the opening and prior to the recessing of the replacement metal gate, filling the opening with a mask;
wherein the recessing of the replacement metal gate is performed after the filling of the opening with the mask, the recessing including recessing the replacement metal gate to a height that is less than a height of the mask.
17. The method of claim 16 , further comprising:
after the recessing of the opening and prior to the forming of the insulator, removing the mask.
18. The method of claim 9 , wherein the forming of the insulator includes forming a stack of insulator materials.
19. The method of claim 18 , wherein the forming of the stack of insulator materials includes:
depositing a first silicon nitride layer via atomic layer deposition (ALD);
depositing a second silicon nitride layer via ALD; and
depositing a third silicon nitride layer via high-density plasma (HDP) chemical vapor deposition (CVD).