Semiconductor device and method

1. A method of manufacturing a semiconductor device, the method comprising:

mixing a liquid comprising a polyimide material such that the liquid has an even composition throughout;

forming a dielectric layer with the liquid;

positioning a patterned mask over the dielectric layer, the dielectric layer comprising a low-temperature cure polyimide, the low-temperature cure polyimide having an even composition throughout;

exposing a first surface of the dielectric layer through the patterned mask to an I-line wavelength within an I-line stepper; and

developing the dielectric layer to form an opening, wherein the opening has a top width at a top surface of the dielectric layer and a bottom width at a bottom surface of the dielectric layer, wherein the top width is at least as large as the bottom width.

2. The method of claim 1 , wherein the low-temperature cure polyimide is a negative tone material.

3. The method of claim 1 , wherein the low-temperature cure polyimide comprises N-methyl-2-pyrrolidone (NMP), polyamic acid ester and ethyl lactate (EL).

4. The method of claim 3 , wherein the low-temperature cure polyimide further comprises tetraethylene glycol dimathacrylate.

5. The method of claim 1 , wherein exposing the first surface of the dielectric layer forms an angle in a top surface of the dielectric layer of between approximately 2 to 8 degrees.

6. The method of claim 1 , further comprising forming the dielectric layer to a thickness of approximately 8 microns.

7. The method of claim 1 , wherein the first surface of the dielectric layer is exposed using a stepper using a numerical aperture in the range of approximately 0.1 to 0.18.

8. The method of claim 1 , wherein the first surface of the dielectric layer is exposed to the I-line wavelength at approximately 150 to 500 mJ/cm 2 .

9. The method of claim 1 , wherein the opening is formed to have a mean target thickness of approximately 7 microns.

10. The method of claim 1 , wherein sidewalls of the opening are formed at an angle of approximately 85 degrees.

11. A method of manufacturing a semiconductor device, the method comprising:

forming a dielectric layer over a seed layer;

positioning a patterned mask over the dielectric layer, the dielectric layer comprising a low-temperature cure polyimide, wherein components of the low-temperature cure polyimide are evenly distributed throughout the dielectric layer;

exposing a first surface of the dielectric layer to light of an I-line stepper;

developing the dielectric layer to form an opening extending to a top surface of the seed layer; and

forming contact vias in the opening, wherein the contact vias extend from the top surface of the seed layer to above a top surface of the dielectric layer.

12. The method of claim 11 , wherein the low-temperature cure polyimide comprises N-methyl-2-pyrrolidone (NMP), polyamic acid ester and ethyl lactate (EL).

13. The method of claim 11 , wherein the I-line stepper uses a numerical aperture in the range of approximately 0.1 to 0.18 when exposing the first surface of the dielectric layer.

14. The method of claim 11 , wherein the first surface of the dielectric layer is exposed to an I-line wavelength at approximately 150 to 250 mJ/cm 2 .

15. The method of claim 11 , wherein the opening has a mean target thickness of approximately 7 microns.

16. A method of manufacturing a semiconductor device, the method comprising:

depositing a first composition over a substrate, the first composition comprising solvent components, a resin, and photoactive components (PACs);

curing the first composition to remove the solvent components to form a low-temperature cured polyimide layer, the resin and the PACs remaining after curing, the low-temperature cured polyimide layer having a constant composition throughout the low-temperature cured polyimide layer;

patterning the low-temperature cured polyimide layer by exposing a first surface of the low-temperature cured polyimide layer to light of an I-line stepper;

developing the low-temperature cured polyimide layer to form an opening extending to a top surface of an underlying layer; and

forming a contact via in the opening, wherein the contact via extends from within the opening to the first surface of the dielectric layer.

17. The method of claim 16 , wherein curing comprises baking at a temperature between about 40° C. and 150° C.

18. The method of claim 16 , wherein curing evaporates the solvent components.

19. The method of claim 16 , wherein top corners of the opening are rounded.

20. The method of claim 19 , wherein the top corners are rounded in a range of approximately 0.3 to 0.5 Π rad.