IP Library › Granted Patent US 10,090,278
Granted Patent B2
US 10,090,278 · App. 15/393,754 · Granted Oct 2, 2018

Semiconductor packages

Inventors: Sang-Sick Park (Seoul, KR); Geol Nam (Hwaseong-si, KR); Tae Hong Min (Hwaseong-si, KR); Jihwan Hwang (Hwaseong-si, KR)
Assignee: Samsung Electronics Co., Ltd.
H01L25/0657H01L23/3128H01L23/49827H01L24/17H01L24/81H01L25/50H01L2224/05124H01L2224/05147H01L2224/05155H01L2224/1312H01L2224/13109H01L2224/13111H01L2224/13113H01L2224/13117H01L2224/13139H01L2224/13147H01L2224/13155H01L2224/16113H01L2224/16146H01L2224/16227H01L2224/16235H01L2224/32225H01L2224/73104H01L2224/9211H01L2225/06513H01L2225/06517H01L2225/06541H01L2225/06548H01L2225/06568H01L2225/06586H01L2924/01058H01L2924/0665H01L2924/1434
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Quick Facts
Patent No.
US 10,090,278
App. No.
15/393,754
Granted
Oct 2, 2018
Kind
B2
Abstract

A semiconductor package includes a plurality of semiconductor chips on a substrate. The semiconductor chips include a first semiconductor chip, a second semiconductor chip, and a third semiconductor chip that are sequentially stacked on the substrate. The semiconductor package further includes a plurality of non-conductive layers between the substrate and the first semiconductor chip and between adjacent semiconductor chips among the semiconductor chips. The semiconductor chips include smaller widths as a distance from the substrate increases. Each of the non-conductive layers includes an extension protruding outward from a side surface of an overlying one of the semiconductor chips.

Claims (37)

1. A semiconductor package comprising:

a substrate including a plurality of vias;

a chip stack on the substrate, the chip stack including a lower semiconductor chip on the substrate, an upper semiconductor chip on the lower semiconductor chip, and a middle semiconductor chip between the lower semiconductor chip and the upper semiconductor chip;

a lower non-conductive layer between the substrate and the lower semiconductor chip;

a middle non-conductive layer between the lower semiconductor chip and the middle semiconductor chip; and

an upper non-conductive layer between the middle semiconductor chip and the upper semiconductor chip, a width of the middle semiconductor chip being greater than a width of the upper semiconductor chip and less than a width of the lower semiconductor chip, wherein

the middle non-conductive layer includes a middle extension protruding outside of the middle semiconductor chip and covering side surfaces of the middle semiconductor chip, and

the middle extension has an uppermost end higher than a bottom surface of the upper semiconductor chip,

a width of the middle non-conductive layer is less than a width of the lower non-conductive layer, and

a width of the upper non-conductive layer is less than the width of the middle non-conductive layer,

the middle extension is spaced apart from the upper semiconductor chip, in plan view.

2. The semiconductor package of claim 1 , wherein

the middle semiconductor chip includes a plurality of middle semiconductor chips, and

the plurality of the middle semiconductor chips have smaller widths as a distance from a top surface of the substrate increases.

3. The semiconductor package of claim 1 , wherein

the lower non-conductive layer includes a lower extension protruding outside of the lower semiconductor chip and covering side surfaces of the lower semiconductor chip,

the upper non-conductive layer includes an upper extension protruding outside of the upper semiconductor chip and covering side surfaces of the upper semiconductor chip,

the lower extension is spaced apart from the side surfaces of the middle semiconductor chip, and

the middle extension is spaced apart from the side surfaces of the upper semiconductor chip.

4. The semiconductor package of claim 3 , wherein

the lower extension has an uppermost end higher than a bottom surface of the middle semiconductor chip.

5. The semiconductor package of claim 3 , wherein the upper extension has an uppermost end flush with or lower than a top surface of the upper semiconductor chip.

6. A semiconductor package comprising:

a plurality of non-conductive layers stacked on top of each other, each of the non-conductive layers including extension portions at respective sides that protrude upward compared to a region between the extension portions,

the non-conductive layers including an intermediate non-conductive layer between an upper non-conductive layer and a lower non-conductive layer,

a width of the intermediate non-conductive layer being less than a width of the lower non-conductive layer and greater than a width of the upper non- conductive layer;

a lower semiconductor chip between the lower non-conductive layer and the intermediate non-conductive layer such that lower semiconductor chip is on the region between the extension portions of the lower non-conductive layer;

an intermediate semiconductor chip between the intermediate non-conductive layer and the upper non-conductive layer such that intermediate semiconductor chip is on the region between the extension portions of the intermediate non-conductive layer; and

an upper semiconductor chip on the region between the extension portions of the upper non-conductive layer, a bottom surface of the upper semiconductor chip being below an uppermost end of the extension portions of the intermediate non-conductive layer, wherein

a width of the intermediate non-conductive layer is less than a width of the lower non-conductive layer, and

a width of the upper non-conductive layer is less than the width of the intermediate non-conductive layer,

the extension portions of the intermediate non-conductive layer is spaced apart from the upper semiconductor chip, in plan view.

7. The semiconductor package of claim 6 , wherein

a width of the intermediate semiconductor chip is less than a width of the lower semiconductor chip and greater than a width of the upper semiconductor chip.

8. The semiconductor package of claim 6 , wherein the lower semiconductor chip, the intermediate semiconductor chip, and the upper semiconductor chips each include a memory chip.

9. The semiconductor package of claim 6 , wherein a thickness of the intermediate semiconductor chip is less than a thickness of the upper semiconductor chip.

10. The semiconductor package of claim 6 , wherein the extension portions of the intermediate non-conductive layer are between the extension portions of the lower non-conductive layer and the extension portions of the upper non-conductive layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 6, 2017
From: PARK, SANG-SICK; NAM, GEOL; MIN, TAE HONG; HWANG, JIHWAN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 041292/0387 →
Priority Claims (1)
KR 10-2016-0019302 · Feb 18, 2016 · national
Continuity (1)
Related Publication 20170243856A1 · Aug 24, 2017
Cited By (1)
US 12,721,233