Semiconductor device and manufacturing method thereof
A semiconductor device includes a metal oxide semiconductor device disposed over a substrate and an interconnect plug. The metal oxide semiconductor device includes a gate structure located on the substrate and a raised source/drain region disposed adjacent to the gate structure. The raised source/drain region includes a top surface above a surface of the substrate by a distance. The interconnect plug connects to the raised source/drain region. The interconnect plug includes a doped region contacting the top surface of the raised source/drain region, a metal silicide region located on the doped region, and a metal region located on the metal silicide region.
1. A semiconductor device, comprising: a metal oxide semiconductor device disposed over a substrate, comprising: a gate structure located on a surface of the substrate; a raised source/drain region with a uniform dopant concentration, adjacent to the gate structure and partially under the surface of the substrate, wherein a peak dopant concentration of the raised source/drain region is in a range of from about 1E19 atoms/cm 3 to less than 1E20 atoms/cm 3 , the raised source/drain region comprises a top surface above the surface of the substrate; and an interconnect plug connected to the raised source/drain region, the interconnect plug comprising: a doped region contacting the top surface of the raised source/drain region; a metal silicide region located on and in contact with the doped region; and a metal region located on the metal silicide region, wherein the doped region above the top surface of the raised source/drain region comprising a dopant concentration from 10 to 100 times higher than the peak dopant concentration of the raised source/drain region.
2. The semiconductor device of claim 1 , wherein a portion of the top surface of the raised source/drain region not in contact with the doped region angles with a sidewall of the doped region by less than 90 degrees.
3. The semiconductor device of claim 1 , wherein the raised source/drain region tapers from the surface of the substrate toward the doped region, and the doped region tapers from the topmost portion toward the raised source/drain region.
4. The semiconductor device of claim 1 , wherein the gate structure is apart from a raised portion of the raised source/drain region.
5. The semiconductor device of claim 1 , wherein a contacting area between the doped region and the raised source/drain region is smaller than the top surface.
6. The semiconductor device of claim 1 , wherein the raised source/drain region comprises a dopant material that is the same as that of the doped region.
7. A semiconductor device, comprising: a metal oxide semiconductor device disposed over a substrate, comprising: a gate structure located on a surface of the substrate; a crystallized raised source/drain region with a uniform dopant concentration, adjacent to the gate structure and partially under the surface of the substrate, wherein the crystallized raised source/drain region comprises a top surface above the surface of the substrate by a distance, a peak dopant concentration of the raised source/drain region is in a range of from about 1E19 atoms/cm 3 to less than 1E20 atoms/cm 3 , and an interconnect plug connected to the top surface, wherein the interconnect plug tapers from the topmost portion toward the top surface, comprising: a semiconductor crystallized doped region at the bottom of the interconnect plug contacting the top surface, wherein a contacting area is smaller than the top surface, wherein a dopant concentration of the semiconductor crystallized doped region above the top surface of the crystallized raised source/drain region is 10 to 100 times greater than the peak dopant concentration of the crystallized raised source/drain region.
8. The semiconductor device of claim 7 , wherein the crystallized raised source/drain region comprises a dopant material that is the same as that of the crystallized doped region.
9. The semiconductor device of claim 7 , wherein the crystallized doped region has a thickness of about 5 angstroms to 20 angstroms, and the distance ranges from about 5 angstroms to 15 angstroms.
10. The semiconductor device of claim 7 , further comprising a metal silicide region formed by an upper portion of the crystallized doped region and located on the crystallized doped region.
11. The semiconductor device of claim 7 , wherein the crystallized raised source/drain region tapers from the surface of the substrate toward the crystallized doped region.
12. The semiconductor device of claim 7 , wherein the gate structure is apart from a raised portion of the crystallized raised source/drain region.
13. The semiconductor device of claim 1 , wherein the raised source/drain region comprises a top surface above a surface of the substrate by a distance of from about 5 angstroms to about 25 angstroms.
14. The semiconductor device of claim 1 , wherein the metal region, the metal silicide region, and the doped region form a conductivity gradient from high to low.
15. The semiconductor device of claim 7 , wherein the a portion of the top surface of the crystallized raised source/drain region not in contact with the semiconductor crystallized doped region angles with a sidewall of the semiconductor crystallized doped region by less than 90 degrees.
16. The semiconductor device of claim 7 , wherein a thickness ratio between the semiconductor crystallized doped region and the distance is in a range of from about 1:1 to about 2:1.
17. The semiconductor device of claim 7 , wherein a thickness of the semiconductor crystallized doped region and the distance is in a range from about 25 angstroms to 40 angstroms.
18. A semiconductor device, comprising: a gate structure located on a surface of a substrate; a raised source/drain region with a uniform dopant concentration, adjacent to the gate structure, partially under the top surface of the substrate, comprising a top surface above the surface of the substrate, a peak dopant concentration of the raised source/drain region being in a range of from about 1E19 atoms/cm 3 to less than 1E20 atoms/cm 3 ; and a doped region contacting the top surface of the raised source/drain region, a contacting area between the doped region and the raised source/drain region is smaller than an area of the top surface; wherein the doped region above the top surface of the raised source/drain region comprises a dopant concentration from 10 to 100 times higher than the peak dopant concentration of the raised source/drain region.
19. The semiconductor device of claim 18 , wherein the metal silicide region is disposed over the doped region.