Process for the moderately refractory assembling of articles made of SiC-based materials by non-reactive brazing in an oxidizing atmosphere, brazing compositions, and joint and assembly obtained by this process

1. A process for moderately refractory assembly of at least two articles made of silicon carbide-based materials by non-reactive brazing in an oxidizing atmosphere, the process consisting of:

placing the at least two articles in contact with a non-reactive brazing composition to form an assembly; and

heating the assembly formed by the at least two articles and the non-reactive brazing composition under an oxidizing atmosphere to a brazing temperature that is sufficient to melt the non-reactive brazing composition in order to form a moderately refractory joint,

wherein said oxidizing atmosphere remains present during said melting of the non-reactive brazing composition, and

wherein, the non-reactive brazing composition is a composition A consisting of silica (SiO 2 ), alumina (Al 2 O 3 ) and calcium oxide (CaO) and optionally an addition of titanium oxide or an addition of boron oxide or both, or alternatively a composition B consisting of alumina (Al 2 O 3 ), calcium oxide (CaO) and magnesium oxide (MgO) and optionally an addition of titanium oxide or an addition of boron oxide or both.

2. The process according to claim 1 , wherein the oxidizing atmosphere is an atmosphere containing oxygen comprising an atmosphere of air, of oxygenated argon or of oxygenated helium.

3. The process according to claim 1 , in which composition A is composed, as mass percentages, of 75% to 7% SiO 2 , 60% to 6% Al 2 O 3 and 60% to 10% CaO.

4. The process according to claim 3 , in which composition A is composed, as mass percentages, of 70% to 55% SiO 2 , 22% to 8% Al 2 O 3 and 35% to 15% CaO.

5. The process according to claim 4 , in which composition A is composed, as mass percentages, of 62% SiO 2 , 15% Al 2 O 3 and 23% CaO.

6. The process according to claim 3 , in which composition A is composed, as mass percentages, of 55% to 38% SiO 2 , 25% to 12% Al 2 O 3 and 45% to 30% CaO.

7. The process according to claim 6 , in which composition A is composed, as mass percentages, of 42% SiO 2 , 20% Al 2 O 3 and 38% CaO.

8. The process according to claim 3 , in which composition A is composed, as mass percentages, of 38% to 8% SiO 2 , 55% to 8% Al 2 O 3 and 55% to 28% CaO.

9. The process according to claim 8 , in which composition A is composed, as mass percentages, of 22% SiO 2 , 37% Al 2 O 3 and 41% CaO.

10. The process according to claim 1 , in which composition B is composed, as mass percentages, of 70% to 35% Al 2 O 3 , 65% to 25% CaO and 20% to 1% MgO.

11. The process according to claim 10 , in which composition B is composed, as mass percentages, of 50.5% Al 2 O 3 , 44.0% CaO and 5.5% MgO.

12. The process according to claim 1 , in which

the brazing temperature is 1100° C. to 1650° C., and

the heating is performed at the brazing temperature for a time of 1 to 240 minutes.

13. The process according to claim 12 , in which

the brazing temperature is 1350° C. to 1650° C., and

the heating is performed at the brazing temperature for a time of 1 to 240 minutes.

14. The process according to claim 12 , in which the heating is performed for a time of 2 to 30 minutes.

15. The process according to claim 1 , in which the heating of the assembly formed by the at least two articles and the non-reactive brazing composition under the oxidizing atmosphere to the brazing temperature is achieved by introducing the assembly directly into a device already brought to the brazing temperature.

16. The process according to claim 15 , in which the device is an oven.

17. The process according to claim 1 , in which the heating of the assembly formed by the at least two articles and the non-reactive brazing composition under the oxidizing atmosphere to the brazing temperature is achieved by applying a temperature rise from room temperature.

18. The process according to claim 1 , in which the silicon carbide-based materials are selected from among the group consisting of pure silicon carbides and SiC-based composite materials.

19. The process of claim 18 , wherein the pure silicon carbides are pure α silicon carbide (α-SiC) or pure β silicon carbide (β-SiC).

20. The process of claim 18 , wherein the SiC-based composite materials are a composite material with at least one selected from silicon carbide fibers and a silicon carbide matrix.

21. The process according to claim 1 , in which the silicon carbide-based materials are selected from among the group consisting of pressureless sintered silicon carbide (PLS—SiC); Si-infiltrated silicon carbide (SiSiC or RBSC); porous recrystallized silicon carbide (RSiC); silicon graphite (C—SiC) composed of graphite and covered with a layer of SiC; SiC/SiC composites; C/SiC composites; SiC monocrystals; and SiC composites with another ceramic.

22. The process of claim 21 , wherein the SiC/SiC composites contain fibers or “whiskers”.

23. The process of claim 21 , wherein the C/SiC composites contain carbon fibers or “whiskers” and an SiC matrix.

24. The process of claim 21 , wherein the SiC composites with another ceramic are SiC/Si 3 N 4 or SiC/TiN.

25. The process according to claim 1 , in which said silicon carbide-based materials have a silicon carbide content at least equal to 50% by mass.

26. The process according to claim 25 , in which said silicon carbide-based materials have a silicon carbide content at least equal to 80% by mass.

27. The process according to claim 26 , in which said silicon carbide-based materials have a silicon carbide content equal to 100% by mass.

28. The process of claim 1 , wherein the at least two articles are shaped articles.