Composition for manufacturing semiconductor device and method of manufacturing semiconductor device using the composition

1. A method of manufacturing a semiconductor device, the method comprising:

forming a feature layer on a substrate;

coating the feature layer with a composition including alkyne and azide;

forming a carbon-containing layer including a triazole compound by performing a heat treatment on the coated composition;

forming a photoresist film on the carbon-containing layer;

forming photoresist patterns by exposing and developing the photoresist film; and

patterning the carbon-containing layer and the feature layer using the photoresist patterns.

2. The method of claim 1 , wherein the patterning of the carbon-containing layer and the feature layer comprises:

forming carbon-containing patterns by etching the carbon-containing layer using the photoresist patterns as an etching mask; and

forming feature patterns by etching the feature layer using the carbon-containing patterns as an etching mask.

3. The method of claim 1 , wherein the forming of the photoresist patterns comprises exposing the photoresist film using the carbon-containing layer as an anti-reflection film.

4. The method of claim 1 , wherein the forming of the carbon-containing layer comprises inducing a cycloaddition reaction between the alkyne and the azide.

5. The method of claim 4 , wherein the inducing of the cycloaddition reaction is performed without a catalyst.

6. The method of claim 1 , wherein the composition comprises at least one carbon-based composition that includes at least one of a substituted or unsubstituted C1-C50 aliphatic hydrocarbon group, an aryl group including a substituted or unsubstituted C6-C50 aromatic hydrocarbon group, and an arylene group including a C6-C50 aromatic hydrocarbon group.

7. The method of claim 6 , wherein the at least one carbon-based compound comprises at least one heteroatom from nitrogen (N), oxygen (O), phosphorus (P), sulfur (S), boron (B), silicon (Si), a halogen atom, and a metal atom.

8. The method of claim 6 , wherein the at least one carbon-based compound comprises: a first compound expressed by the following Formula (1):

R 1 R 2 ; and  Formula (1)

a second compound expressed by the following Formula (2):

N 3 —R 3 ,  Formula (2)

wherein R 1 is a C1-C50 aliphatic hydrocarbon group or a C6-C50 aromatic hydrocarbon group,

R 2 is a hydrogen atom, a C1-C50 aliphatic hydrocarbon group, or a C6-C50 aromatic hydrocarbon group, and

R 3 is a C1-C50 aliphatic hydrocarbon group or a C6-C50 aromatic hydrocarbon group.

9. The method of claim 8 , wherein the at least one carbon-based compound further comprises a third compound that does not comprise alkyne and azide.

10. The method of claim 6 , wherein the at least one carbon-based compound comprises a fourth compound expressed by the following Formula (4):

wherein “A” includes a carbon-based compound including at least one substituted or unsubstituted ring,

R 21 and R 22 are substantially equal to or different from each other, and each of R 21 and R 22 independently includes at least one of a hydrogen atom, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C1-C20 heteroalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 heteroalkenyl group, a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C6-C30 heteroaryl group, a substituted or unsubstituted C2-C20 alkynyl group, and a substituted or unsubstituted C2-C20 heteroalkynyl group.

11. A method of manufacturing a semiconductor device, the method comprising:

coating a base layer with a cross-linking compound;

heating the base layer and the cross-linking compound to form a carbon-containing layer;

the carbon-containing layer not undergoing condensation during or after the heating.

12. The method of claim 11 , wherein the cross-linking compound:

includes alkyne and azide;

has a molecular weight equal to or less than about 3,000; or

includes alkyne and azide and has a molecular weight equal to or less than about 3,000.

13. The method of claim 11 , wherein the heating is performed between about 100° C. and about 400° C.

14. The method of claim 11 , wherein the carbon-containing layer includes a triazole compound.

15. The method of claim 11 , further comprising:

forming a photoresist film on the carbon-containing layer;

forming photoresist patterns by etching the photoresist film; and

patterning the carbon-containing layer and the base layer using the photoresist patterns.