Method of manufacturing Cu wiring
In a Cu wiring manufacturing method, a MnO x film which becomes a self-formed barrier film by reaction with an interlayer insulating film of a substrate is formed on a surface of a recess formed in the interlayer insulating film by ALD. A hydrogen radical process is performed on a surface of the MnO x film to reduce the surface of the MnO x film. A Ru film is formed by CVD on the surface of the MnO x film which has been reduced by the hydrogen radical process. A Cu-based film is formed on the Ru film by PVD to be filled in the recess. When the Ru film is formed, a film-formation condition of the MnO x film and a condition of the hydrogen radical process are set such that nucleus formation is facilitated and the Ru film is formed in a state where a surface smoothness is high.
1. A Cu wiring manufacturing method for manufacturing a Cu wiring that fills a recess formed in a predetermined pattern on a surface of an interlayer insulating film of a substrate, the method comprising:
forming a MnO x film which becomes a self-formed barrier film by reaction with the interlayer insulating film at least on a surface of the recess by ALD;
performing a hydrogen radical process on a surface of the MnO x film to reduce the surface of the MnO x film;
forming a Ru film by CVD on the surface of the MnO x film which has been reduced by the hydrogen radical process; and
forming a Cu-based film on the Ru film by PVD to fill the Cu-based film in the recess;
wherein when the Ru film is formed, a film-formation condition of the MnO x film and a condition of the hydrogen radical process are set such that nucleus formation is facilitated,
wherein the MnO x film is formed by alternately supplying a Mn compound-containing gas and an oxygen-containing gas into a processing chamber accommodating the substrate with a purge process for purging an inside of the processing chamber interposed between the supply of the Mn compound-containing gas and the supply of the oxygen-containing gas, and
wherein a film thickness of the MnO x film is in the range of 1 nm to 4.5 nm and a temperature of the substrate is set to be lower than a thermal decomposition temperature of a Mn compound in the Mn compound-containing gas.
2. The Cu wiring manufacturing method of claim 1 , wherein a number of cycles in the alternately supplying the Mn compound-containing gas and the oxygen-containing gas is between 17 to 60.
3. The Cu wiring manufacturing method of claim 2 , wherein the number of the cycles is in the range of 19 to 31.
4. The Cu wiring manufacturing method of claim 1 , wherein the film thickness of the MnO x film is in the range of 1 nm to 2.5 nm.
5. The Cu wiring manufacturing method of claim 4 , wherein a part of the MnO x film becomes Mn silicate by heat generated when the MnO x film is formed or by heat generated during a subsequent process, and a ratio of the Mn silicate to a sum of the Mn silicate and a remaining MnO x film is 30% or more.
6. The Cu wiring manufacturing method of claim 1 , wherein the Mn compound is selected among a cyclopentadienyl-based manganese compound, an amidinate-based manganese compound and an amide amino alkane-based manganese compound, and
wherein when the MnO x film is formed, the temperature of the substrate is in the range of 130° C. to 180° C.
7. The Cu wiring manufacturing method of claim 1 , wherein the hydrogen radical process is performed for 100 sec or more while a temperature of the substrate is in the range of 200° C. to 400° C.
8. The Cu wiring manufacturing method of claim 7 , wherein in the hydrogen radical process, the temperature of the substrate is in the range of 300° C. to 400° C.
9. The Cu wiring manufacturing method of claim 7 , wherein the hydrogen radical process is performed by supplying a plasma of a hydrogen-containing gas to the substrate.
10. The Cu wiring manufacturing method of claim 1 , wherein the Ru film is formed with a film thickness in the range of 1.5 nm to 4.5 nm by using ruthenium carbonyl as a film-forming material and a temperature of the substrate is in the range of 170° C. to 230° C.
11. The Cu wiring manufacturing method of claim 10 , wherein when the Ru film is formed, the temperature of the substrate is in the range of 190° C. to 200° C.
12. The Cu wiring manufacturing method of claim 11 , wherein the film thickness of the Ru film is in a range of 2.5 nm to 3.8 nm.
13. The Cu wiring manufacturing method of claim 1 , wherein the Cu-based film is formed by ionization PVD while the temperature of the substrate is in the range of 230° C. to 350° C.
14. A computer-executable storage medium storing a program for controlling a Cu wiring manufacturing system, wherein the program, when executed, controls the Cu wiring manufacturing system on a computer to perform the Cu wiring manufacturing method described in claim 1 .
15. A Cu wiring manufacturing method for manufacturing a Cu wiring that fills a recess formed in a predetermined pattern on a surface of an interlayer insulating film of a substrate, the method comprising:
forming a MnO x film, wherein the MnO x film becomes a self-formed barrier film by reaction with the interlayer insulating film at least on a surface of the recess by ALD;
performing a hydrogen radical process on a surface of the MnO x film to reduce the surface of the MnO x film;
forming a Ru film by CVD on the surface of the MnO x film which has been reduced by the hydrogen radical process; and
forming a Cu-based film on the Ru film by PVD to fill the Cu-based film in the recess;
wherein the MnO x film is formed by alternately supplying a Mn compound-containing gas and an oxygen-containing gas into a processing chamber accommodating the substrate with a purge process for purging an inside of the processing chamber interposed between the supply of the Mn compound-containing gas and the supply of the oxygen-containing gas,
wherein a film thickness of the MnO x film is in the range of 1 nm to 4.5 nm and a temperature of the substrate is lower than a thermal decomposition temperature of a Mn compound in the Mn compound-containing gas, and
wherein the hydrogen radical process is performed for 100 sec or more while the temperature of the substrate is in the range of 200° C. to 400° C.
16. The Cu wiring manufacturing method of claim 15 , wherein a number of cycles in the alternately supplying the manganese compound-containing gas and the oxygen-containing gas is in the range of 17 to 60.
17. The Cu wiring manufacturing method of claim 16 , wherein the number of the cycles is in the range of 19 to 31.
18. The Cu wiring manufacturing method of claim 15 , wherein the thickness of the MnO x film is in the range of 1 nm to 2.5 nm.
19. The Cu wiring manufacturing method of claim 18 , wherein a part of the MnO x film becomes Mn silicate by heat generated when the MnO x film is formed or by heat generated during a subsequent process, and a ratio of the Mn silicate to a sum of the Mn silicate and a remaining MnO x film is 30% or more.
20. The Cu wiring manufacturing method of claim 15 , wherein the Mn compound is selected among a cyclopentadienyl-based manganese compound, an amidinate-based manganese compound, an amide amino alkane-based manganese compound, and
wherein when the MnO x film is formed, the temperature of the substrate is in the range of 130° C. to 180° C.
21. The Cu wiring manufacturing method of claim 15 , wherein in the hydrogen radial process, the temperature of the substrate is in the range of 300° C. to 400° C.
22. The Cu wiring manufacturing method of claim 15 , wherein the hydrogen radical process is performed by supplying radicals in a plasma of a hydrogen-containing gas to the substrate.