Transistor, semiconductor device, and electronic device
View Patent ↗To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.
1. A transistor comprising:
a wiring;
a first electrode comprising a region overlapping with the wiring;
a second electrode;
a third electrode;
a fourth electrode;
a first semiconductor layer;
a second semiconductor layer comprising a region overlapping with the first semiconductor layer, the second semiconductor layer comprising a first region, a second region, and a third region, wherein the third region is sandwiched between the first region and the second region;
a third semiconductor layer;
a first layer comprising a region overlapping with the second electrode in the region overlapping with the first region;
a second layer comprising a region overlapping with the third electrode in the region overlapping with the second region;
a first insulating layer comprising a region overlapping with the wiring;
a second insulating layer comprising a region overlapping with the first electrode and a region overlapping with the first insulating layer; and
a third insulating layer,
wherein the first semiconductor layer comprises a region overlapping with the second insulating layer,
wherein the second electrode comprises a region overlapping with the first region,
wherein the third electrode comprises a region overlapping with the second region,
wherein the third semiconductor layer comprises a region overlapping with the first layer, a region overlapping with the second layer, and a region overlapping with the third region, and
wherein the fourth electrode comprises a region overlapping with the third region with the third insulating layer located between the fourth electrode and the third region.
2. The transistor according to claim 1 , wherein the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer each comprise an oxide semiconductor.
3. The transistor according to claim 1 , wherein the first layer and the second layer each comprise an oxide semiconductor.
4. The transistor according to claim 1 , wherein the first electrode, the second electrode, the third electrode, and the fourth electrode are configured to function as a back gate, a source electrode, a drain electrode, and a gate electrode, respectively; and the third insulating layer is configured to function as a gate insulating layer.
5. The transistor according to claim 1 , wherein a channel is formed in the third region.
6. The transistor according to claim 1 , wherein at least one of the first insulating layer and the second insulating layer comprises excess oxygen.
7. The transistor according to claim 1 , wherein the wiring is located below the first electrode.
8. The transistor according to claim 1 , wherein the first layer is located between the second electrode and the third semiconductor layer, and the second layer is located between the third electrode and the third semiconductor layer.
9. An electronic device comprising:
the transistor according to claim 1 ; and
an antenna, a battery, an operation switch, a microphone, or a speaker.
10. A transistor comprising:
a second insulating layer;
a fourth insulating layer;
a fourth semiconductor layer comprising a region overlapping with the second insulating layer, the fourth semiconductor layer comprising a fourth region, a fifth region, and a sixth region, wherein the sixth region is located between the fourth region and the fifth region;
a fifth electrode penetrating the fourth semiconductor layer and the fourth insulating layer in a region overlapping with the fourth region, the fifth electrode comprising a region electrically connected to the fourth semiconductor layer;
a sixth electrode penetrating the fourth semiconductor layer and the fourth insulating layer in a region overlapping with the fifth region, the sixth electrode comprising a region electrically connected to the fourth semiconductor layer; and
a seventh electrode comprising a region overlapping with the sixth region with the fourth insulating layer located between the seventh electrode and the sixth region,
wherein the fourth insulating layer comprises a region overlapping with the fourth semiconductor layer.
11. The transistor according to claim 10 , wherein the fourth semiconductor layer comprises an oxide semiconductor.
12. The transistor according to claim 10 , wherein the fifth electrode, the sixth electrode, and the seventh electrode are configured to function as a source electrode, a drain electrode, and a gate electrode, respectively; and the fourth insulating layer is configured to function as a gate insulating layer.
13. The transistor according to claim 10 , wherein a channel is formed in the sixth region.
14. The transistor according to claim 10 , wherein the second insulating layer comprises excess oxygen.
15. An electronic device comprising:
the transistor according to claim 10 ; and
an antenna, a battery, an operation switch, a microphone, or a speaker.
16. A semiconductor device comprising:
the transistor according to claim 1 ; and
the transistor according to claim 10 .
17. The semiconductor device according to claim 16 , wherein a threshold voltage of the transistor according to claim 1 is lower than a threshold voltage of the transistor according to claim 10 when the potential of the first electrode is the same as the potential of the fourth electrode.
18. The semiconductor device according to claim 16 , wherein an electron affinity of the fourth semiconductor layer is lower than an electron affinity of the second semiconductor layer.
19. An electronic device comprising:
the semiconductor device according to claim 16 ; and
an antenna, a battery, an operation switch, a microphone, or a speaker.