Semiconductor device, module, and electronic device
To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.
1. A semiconductor device comprising:
a first conductor and a second conductor;
a first insulator in contact with a top surface of the first conductor and a top surface of the second conductor;
a second insulator over the first insulator;
an oxide semiconductor overlapping with the first conductor with the first insulator and the second insulator interposed therebetween;
a third insulator over the oxide semiconductor;
a third conductor overlapping with the oxide semiconductor with the third insulator interposed therebetween;
a fourth insulator over and in contact with the third conductor, a side surface of the third insulator, the oxide semiconductor, and the first insulator;
a fifth insulator over the fourth insulator;
a fourth conductor in contact with the oxide semiconductor;
a fifth conductor in contact with the oxide semiconductor; and
a sixth conductor overlapping with the second conductor with the first insulator and the fourth insulator interposed therebetween,
wherein the second insulator has an opening,
wherein the fourth insulator is in direct contact with a side surface of the second insulator, and
wherein the fourth insulator comprises a nitride insulating film.
2. The semiconductor device according to claim 1 ,
wherein the nitride insulating film contains hydrogen.
3. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor includes a first region in contact with the third insulator, and a second region and a third region that are in contact with the fourth insulator,
wherein the second region and the third region each include a region with lower resistance than that of the first region,
wherein the fourth conductor is in contact with the oxide semiconductor in the second region, and
wherein the fifth conductor is in contact with the oxide semiconductor in the third region.
4. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor includes a first oxide semiconductor and a second oxide semiconductor,
wherein the second oxide semiconductor is over and in contact with the first oxide semiconductor, and
wherein in a region where the fourth conductor overlaps with the oxide semiconductor, the first oxide semiconductor has higher conductivity than the second oxide semiconductor.
5. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor includes a first oxide semiconductor and a second oxide semiconductor,
wherein the second oxide semiconductor is over and in contact with the first oxide semiconductor, and
wherein in a region where the fourth conductor overlaps with the oxide semiconductor, the second oxide semiconductor has higher conductivity than the first oxide semiconductor.
6. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor includes a first oxide semiconductor, a second oxide semiconductor, and a third oxide semiconductor,
wherein the second oxide semiconductor is over and in contact with the first oxide semiconductor,
wherein the third oxide semiconductor is over and in contact with the second oxide semiconductor, and
wherein in a region where the fourth conductor overlaps with the oxide semiconductor, the second oxide semiconductor has higher conductivity than the first oxide semiconductor and the third oxide semiconductor.
7. The semiconductor device according to claim 1 ,
wherein an end portion of the third insulator extends beyond an end portion of the third conductor.
8. The semiconductor device according to claim 7 ,
wherein the end portion of the third insulator includes a region whose cross-sectional shape is a circular arc.
9. The semiconductor device according to claim 1 ,
wherein the third conductor includes a first conductive layer and a second conductive layer,
wherein the second conductive layer is over and in contact with the first conductive layer, and
wherein an end portion of the first conductive layer extends beyond an end portion of the second conductive layer.
10. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor contains indium and zinc.
11. A module comprising the semiconductor device according to claim 1 , and a printed board.
12. An electronic device comprising:
the module according to claim 11 ; and
at least one of a speaker, an operation key, and a battery.
13. A semiconductor device comprising:
a first conductor and a second conductor;
a first insulator in contact with a top surface of the first conductor and a top surface of the second conductor;
an oxide semiconductor overlapping with the first conductor with the first insulator interposed therebetween;
a second insulator over the oxide semiconductor;
a third conductor overlapping with the oxide semiconductor with the second insulator interposed therebetween;
a third insulator over and in direct contact with the third conductor, a side surface of the second insulator, the oxide semiconductor, and the first insulator;
a fourth conductor in contact with the oxide semiconductor;
a fifth conductor in contact with the oxide semiconductor; and
a sixth conductor overlapping with the second conductor with the first insulator and the third insulator interposed therebetween,
wherein a material of the sixth conductor is the same as a material of the fourth conductor, and
wherein the third insulator comprises a nitride insulating film.
14. The semiconductor device according to claim 13 ,
wherein the nitride insulating film contains hydrogen.
15. The semiconductor device according to claim 13 ,
wherein the oxide semiconductor includes a first region in contact with the second insulator, and a second region and a third region that are in contact with the third insulator,
wherein the second region and the third region each include a region with lower resistance than that of the first region,
wherein the fourth conductor is in contact with the oxide semiconductor in the second region, and
wherein the fifth conductor is in contact with the oxide semiconductor in the third region.
16. The semiconductor device according to claim 13 ,
wherein the oxide semiconductor includes a first oxide semiconductor and a second oxide semiconductor,
wherein the second oxide semiconductor is over and in contact with the first oxide semiconductor, and
wherein in a region where the fourth conductor overlaps with the oxide semiconductor, the first oxide semiconductor has higher conductivity than the second oxide semiconductor.
17. The semiconductor device according to claim 13 ,
wherein the oxide semiconductor includes a first oxide semiconductor and a second oxide semiconductor,
wherein the second oxide semiconductor is over and in contact with the first oxide semiconductor, and
wherein in a region where the fourth conductor overlaps with the oxide semiconductor, the second oxide semiconductor has higher conductivity than the first oxide semiconductor.
18. The semiconductor device according to claim 13 ,
wherein the oxide semiconductor includes a first oxide semiconductor, a second oxide semiconductor, and a third oxide semiconductor,
wherein the second oxide semiconductor is over and in contact with the first oxide semiconductor,
wherein the third oxide semiconductor is over and in contact with the second oxide semiconductor, and
wherein in a region where the fourth conductor overlaps with the oxide semiconductor, the second oxide semiconductor has higher conductivity than the first oxide semiconductor and the third oxide semiconductor.
19. The semiconductor device according to claim 13 ,
wherein an end portion of the second insulator extends beyond an end portion of the third conductor.
20. The semiconductor device according to claim 19 ,
wherein the end portion of the second insulator includes a region whose cross-sectional shape is a circular arc.
21. The semiconductor device according to claim 13 ,
wherein the third conductor includes a first conductive layer and a second conductive layer,
wherein the second conductive layer is over and in contact with the first conductive layer, and
wherein an end portion of the first conductive layer extends beyond an end portion of the second conductive layer.
22. The semiconductor device according to claim 13 ,
wherein the oxide semiconductor contains indium and zinc.
23. A module comprising the semiconductor device according to claim 13 and a printed board.
24. An electronic device comprising:
the module according to claim 23 ; and
at least one of a speaker, an operation key, and a battery.