IP Library Granted Patent US 10,100,404
Granted Patent B2
US 10,100,404 · App. 14/407,120 · Granted Oct 16, 2018

Method and device for manufacturing a barrier layer on a flexible substrate

Inventors: Serguei Starostine (Tilburg, NL); Hindrik De Vries (Tilburg, NL)
Assignee: Fujifilm Manufacturing Europe BV
C23C16/401C23C16/5093C23C16/5096C23C16/545C23C16/56H01J37/32348H01J37/32825H01L51/0097Y02E10/549Y02P70/521Y10T428/249967
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Quick Facts
Patent No.
US 10,100,404
App. No.
14/407,120
Granted
Oct 16, 2018
Kind
B2
Abstract

Method and apparatus for manufacturing a barrier layer on a substrate ( 1; 1 a, 1 b ). An inorganic oxide layer ( 11 ) having a pore volume between 0.3 and 10 vol. % is provided on the substrate ( 1; 1 a, 1 b ). Subsequently the substrate ( 1; 1 a, 1 b ) with the inorganic oxide layer ( 11 ) is treated in an atmospheric glow discharge plasma to form a sealing layer ( 12 ), the plasma being generated by at least two electrodes ( 2, 3 ) in a treatment space ( 5 ) formed between the at least two electrodes ( 2, 3 ). The treatment space ( 5 ) comprises in operation a mixture of a gas comprising oxygen and precursor material in an amount between 2 and 50 ppm. A local deposition rate is controlled at 5 nm/sec or lower, using a power density of 10 W/cm 2 or higher in the treatment space ( 5 ).

Claims (32)

1. A method for manufacturing a barrier layer on a substrate, the method comprising:

providing an inorganic oxide layer having a pore volume between 0.3 and 10 vol. % on the substrate; and

subsequently treating the substrate with the inorganic oxide layer in an atmospheric glow discharge plasma to form a silicon dioxide sealing layer with a thickness between 1 and 15nm, the plasma being generated by at least two electrodes in a treatment space formed between the at least two electrodes, the treatment space comprising in operation a mixture of a gas comprising oxygen and precursor material in an amount between 2 and 50 ppm, by controlling a local deposition rate at 5.5 nm/sec or lower, using a power density of 10 W/cm 2 or higher in the treatment space, wherein the precursor material comprises tetraethoxysilane, hexamethyldisiloxane and/or hexamethyldisilazane.

2. The method according to claim 1 , wherein the treatment of the substrate with the inorganic oxide layer in the treatment space is done at a temperature below 150 ° C.

3. The method according to claim 1 , wherein the treatment of the substrate with the inorganic oxide layer in the treatment space is done during a time period of less than 20 minutes.

4. The method according to claim 1 , wherein the substrate is a flexible polymeric substrate.

5. The method according to claim 1 , wherein the inorganic oxide layer is provided on the substrate using an atmospheric glow discharge plasma, said plasma being generated by at least two electrodes in a treatment space formed between the at least two electrodes, the treatment space comprising in operation a gas comprising oxygen and a precursor material.

6. The method according to claim 5 , wherein the inorganic oxide layer has a pore volume between 0.3 and 3 vol. %.

7. The method according to claim 5 , wherein the provision of the inorganic oxide layer on the substrate is done in a time period of less than 20 minutes.

8. The method according to claim 5 , wherein the gas used to provide the inorganic oxide layer comprises oxygen in a concentration above 5% and a precursor material amount between 250 and 5000 ppm.

9. The method according to claim 5 , wherein the provision of the inorganic oxide layer in the treatment space is done at a temperature below 150 ° C.

10. The method according to claim 1 , wherein:

(a) the treatment of the substrate with the inorganic oxide layer in the treatment space is done at a temperature below 150 ° C.;

(b) the treatment of the substrate with the inorganic oxide layer in the treatment space is done during a time period of less than 20 minutes; and

(c) the substrate is a flexible polymeric substrate.

11. The method according to claim 1 , wherein:

(a) the treatment of the substrate with the inorganic oxide layer in the treatment space is done at a temperature below 100 ° C.;

(b) the treatment of the substrate with the inorganic oxide layer in the treatment space is done during a time period of less than 20 minutes; and

(c) the substrate is a flexible polymeric substrate selected from the group consisting of polyethylene terephthalate and polyethylene naphthalate.

12. The method according to claim 5 , wherein:

(a) the inorganic oxide layer has a pore volume between 0.3 and 3 vol. %;

(b) the provision of the inorganic oxide layer on the substrate is done in a time period of less than 20 minutes;

(c) the gas used to provide the inorganic oxide layer comprises oxygen in a concentration above 5% and a precursor material amount between 250 and 5000 ppm; and

(d) the provision of the inorganic oxide layer in the treatment space is done at a temperature below 150 ° C.

13. The method according to claim 1 , wherein:

(a) the treatment of the substrate with the inorganic oxide layer in the treatment space is done at a temperature below 100 ° C.;

(b) the treatment of the substrate with the inorganic oxide layer in the treatment space is done during a time period of less than 20 minutes;

(c) the substrate is a flexible polymeric substrate selected from the group consisting of polyethylene terephthalate and polyethylene naphthalate;

(d) the inorganic oxide layer is provided on the substrate using an atmospheric glow discharge plasma, said plasma being generated by at least two electrodes in a treatment space formed between the at least two electrodes, the treatment space comprising in operation a gas comprising oxygen and a precursor material;

(e) the inorganic oxide layer has a pore volume between 0.3 and 3 vol. %;

(f) the gas used to provide the inorganic oxide layer comprises oxygen in a concentration above 5% and a precursor material amount between 250 and 5000 ppm; and

(g) the provision of the inorganic oxide layer in the treatment space is done at a temperature below 150 ° C.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 27, 2015
From: STAROSTINE, SERGUEI; DE VRIES, HINDRIK
To: FUJIFILM MANUFACTURING EUROPE B.V.
Reel/Frame 035272/0407 →
Priority Claims (1)
GB 1210836.1 · Jun 19, 2012 · national
Continuity (1)
Related Publication 20150184300A1 · Jul 2, 2015