Pressure sensor with light detection of diaphragm protrusion
Provided is a pressure sensor that includes a detection film that is arranged on a silicon substrate, detects a pressure applied to a surface thereof, and generates a protrusion deformation in response to the pressure. The pressure sensor also includes an optical transmitter and an optical detector that are arranged on the silicon substrate on opposite sides of the detection film and are located at a plane parallel to a plane comprising the detection film. The pressure sensor also includes a pressure calculation module that is connected to the optical detector and is used for acquiring light intensity data and calculating a pressure value according to the light intensity data. Also provided is a method of manufacturing the pressure sensor.
1. A pressure sensor, comprising:
a silicon substrate defining a base area having a first thickness, the silicon substrate including a detecting diaphragm defining a detecting diaphragm area having a second thickness,
wherein the first thickness is greater than the second thickness, and
wherein the detecting diaphragm is configured to detect a pressure applied to a surface of the detecting diaphragm and to generate a protrusion deformation in response to the pressure;
a light emitter and a light detector positioned on the silicon substrate and located at a plane parallel to a plane comprising the detecting diaphragm, and the light emitter and the light detector being positioned on opposite sides of the detecting diaphragm to define a light path, wherein the detecting diaphragm is configured to protrude and intercept the light path; and
a pressure calculating module connected to the light detector and configured to acquire a light intensity data and to calculate a pressure value according to the light intensity data,
wherein a diameter of a light beam emitted by the light emitter is greater than a greatest protruding value of the detecting diaphragm in a protrusion direction of the detecting diaphragm.
2. The pressure sensor according to claim 1 , wherein the detecting diaphragm is a silicon structure integrally formed with the silicon substrate.
3. The pressure sensor according to claim 1 , wherein a thickness of the detecting diaphragm ranges from 5 microns to 100 microns.
4. The pressure sensor according to claim 1 , wherein a protruding value of the detecting diaphragm is less than 30 microns.
5. The pressure sensor according to claim 4 , wherein the diameter of the light beam emitted by the light emitter is equal to or less than 300 microns.
6. The pressure sensor according to claim 4 , wherein the diameter of the light beam emitted by the light emitter ranges from 30 microns to 60 microns.
7. The pressure sensor according to claim 1 , wherein an optical fiber of an emitting end of the light emitter and an optical fiber of a receiving end of the light detector are located on the plane parallel to the plane comprising the detecting diaphragm, and the optical fiber of the emitting end of the light emitter and the optical fiber of the receiving end of the light detector are positioned on opposite sides of the detecting diaphragm.
8. The pressure sensor according to claim 7 , wherein the light emitter is an infrared light emitter and the light detector is an infrared light detector.
9. The pressure sensor according to claim 1 , wherein a protruding value of the detecting diaphragm is proportional to the pressure.
10. A method of manufacturing a pressure sensor, comprising:
providing a silicon substrate;
etching a region of the silicon substrate which is used to form a detecting diaphragm having a predetermined thickness; and
positioning a light emitter and a light detector on the silicon substrate, wherein the light emitter and the light detector are located at a plane parallel to a plane comprising the detecting diaphragm, and the light emitter and the light detector are positioned on opposite sides of the detecting diaphragm to define a light path, wherein the detecting diaphragm is configured to protrude and intercept the light path,
wherein a diameter of a light beam emitted by the light emitter is greater than a greatest protruding value of the detecting diaphragm in a protrusion direction of the detecting diaphragm.
11. The method according to claim 10 , wherein the positioning the light emitter and the light detector on the silicon substrate specific comprises: positioning an optical fiber of an emitting end of the light emitter and an optical fiber of a receiving end of the light detector on the silicon substrate.
12. The method according to claim 11 , wherein the light emitter is an infrared light emitter and the light detector is an infrared light detector.
13. The method according to claim 10 , wherein a protruding value of the detecting diaphragm is proportional to the pressure applying to the detecting diaphragm.