Organic light emitting display device
An organic light emitting display device is discussed. The organic light emitting display device according to an embodiment includes a base substrate, a buffer layer disposed on the base substrate, and a thin film transistor disposed on the buffer layer. The organic light emitting display device further includes an organic light emitting diode connected to the thin film transistor and disposed on the thin film transistor. The thin film transistor includes a gate electrode, a source electrode, and a drain electrode. At least one of the gate, source, and drain electrodes of the thin film transistor includes a semi-transmissive metal layer, a transparent metal layer, and a reflective metal layer to improve outdoor visibility of a display panel by reducing reflectance of the electrodes even though a polarizer is removed.
1. An organic light emitting display device comprising:
a base substrate;
a buffer layer arranged on the base substrate;
a thin film transistor arranged on the buffer layer, the thin film transistor including a gate electrode, a source electrode, and a drain electrode; and
an organic light emitting diode connected to the thin film transistor and arranged on the thin film transistor,
wherein at least one of the gate electrode, the source electrode and the drain electrode includes a semi-transmissive metal layer, a transparent metal layer, and a reflective metal layer,
wherein a thickness of the transparent metal layer is configured such that a first reflective light at the semi-transmissive metal layer and a second reflective light at the reflective metal layer destructively interfere, and
wherein the buffer layer includes a first buffer layer provided on the base substrate and including a plurality of silicon dioxide films and a plurality of silicon nitride films that are alternately stacked, and a second buffer layer provided on the first buffer layer.
2. The organic light emitting display device of claim 1 , wherein the semi-transmissive metal layer is the thinnest, and the reflective metal layer is the thickest, among the semi-transmissive metal layer, the transparent metal layer and the reflective metal layer.
3. The organic light emitting display device of claim 1 , wherein the reflective metal layer reflects more light than the semi-transmissive metal layer.
4. The organic light emitting display device of claim 1 , wherein the transparent metal layer has the thickness in the range of 350 Å to 450 Å.
5. The organic light emitting display device of claim 1 , wherein the base substrate is a polyimide (PI) film having a coefficient of thermal expansion of 10 ppm/° C. or less.
6. The organic light emitting display device of claim 1 , further comprising a lower film arranged below the base substrate, wherein the lower film includes a material that absorbs light.
7. The organic light emitting display device of claim 6 , wherein the lower film has a transmittance of 80% to 50%.
8. The organic light emitting display device of claim 1 , wherein a thickness of the silicon dioxide film is the same as or thicker than that of the silicon nitride film.
9. The organic light emitting display device of claim 8 , wherein the thickness of the silicon dioxide film is in the range of 1500 Å to 2000 Å.
10. The organic light emitting display device of claim 1 , wherein the organic light emitting diode includes:
an anode electrode connected to the drain electrode of the thin film transistor;
an organic light emitting layer provided on the anode electrode; and
a cathode electrode provided on the organic light emitting layer,
wherein the anode electrode is partitioned by a bank.
11. An organic light emitting display device comprising:
a base substrate; a buffer layer disposed on the base substrate;
a thin film transistor disposed on the buffer layer, the thin film transistor including a gate electrode, a source electrode, and a drain electrode, wherein at least one of the gate electrode, the source electrode and the drain electrode includes a semi-transmissive metal layer, a transparent metal layer, and a reflective metal layer, which are sequentially disposed;
an organic light emitting diode connected to the thin film transistor and disposed on the thin film transistor; and
a lower film provided below the base substrate and including a material that absorbs light to reduce reflectance of the gate, source and drain electrodes,
wherein a thickness of the transparent metal layer is configured such that a first reflective light at the semi-transmissive metal layer and a second reflective light at the reflective metal layer destructively interfere, and
wherein the buffer layer includes a first buffer layer provided on the base substrate and including a plurality of silicon dioxide films and a plurality of silicon nitride films that are alternately stacked, and a second buffer layer provided on the first buffer layer.
12. The organic light emitting display device of claim 11 , wherein the semi-transmissive metal layer is the thinnest, and the reflective metal layer is the thickest, among the semi-transmissive metal layer, the transparent metal layer and the reflective metal layer.
13. The organic light emitting display device of claim 11 , wherein the reflective metal layer reflects more light than the semi-transmissive metal layer.
14. The organic light emitting display device of claim 11 , wherein the transparent metal layer has the thickness in the range of 350 Å to 450 Å.
15. The organic light emitting display device of claim 11 , wherein the base substrate is a polyimide (PI) film having a coefficient of thermal expansion of 10 ppm/° C. or less.
16. The organic light emitting display device of claim 11 , wherein the lower film has a transmittance of 80% to 50%.
17. The organic light emitting display device of claim 11 , wherein a thickness of the silicon dioxide film is the same as or thicker than that of the silicon nitride film, and the thickness of the silicon dioxide film is in the range of 1500 Å to 2000 Å.
18. A method of forming an organic light emitting display device, the method comprising:
providing a base substrate;
forming a buffer layer on the base substrate;
forming a thin film transistor on the buffer layer, the thin film transistor including a gate electrode, a source electrode and a drain electrode; and
forming an organic light emitting diode on the thin film transistor, the organic light emitting diode being connected to the thin film transistor,
wherein at least one of the gate electrode, the source electrode and the drain electrode includes a semi-transmissive metal layer, a transparent metal layer, and a reflective metal layer,
wherein a thickness of the transparent metal layer is configured such that a first reflective light at the semi-transmissive metal layer and a second reflective light at the reflective metal layer destructively interfere, and
wherein the buffer layer includes a first buffer layer provided on the base substrate and including a plurality of silicon dioxide films and a plurality of silicon nitride films that are alternately stacked, and a second buffer layer provided on the first buffer layer.