Apparatus, techniques, and target designs for measuring semiconductor parameters
In one embodiment, apparatus and methods for determining a parameter of a target are disclosed. A target having an imaging structure and a scatterometry structure is provided. An image of the imaging structure is obtained with an imaging channel of a metrology tool. A scatterometry signal is also obtained from the scatterometry structure with a scatterometry channel of the metrology tool. At least one parameter, such as overlay error, of the target is determined based on both the image and the scatterometry signal.
1. A method of determining a parameter of a target, comprising
providing a plurality of reference targets having a plurality of different known one or more parameters values and a plurality of production targets, each reference target having an imaging structure and a scatterometry structure;
at a plurality of different operating parameters of the metrology tool, obtaining an image of the imaging structure for each reference target with an imaging channel of a metrology tool, wherein each imaging structure for each reference target includes unresolved features;
at the plurality of different operating parameters of the metrology tool, obtaining a scatterometry signal from the scatterometry structure for each reference target with a scatterometry channel of the metrology tool;
determining at least one parameter for the plurality of reference targets based on both the image and the scatterometry signal for each of the plurality of reference targets; and
determining a recipe by selecting a subset of the different operating parameters of the metrology tool based on which of the determined at least one parameter for the plurality of reference targets most closely matches the known different one or more parameters of the reference targets; and
after the recipe is determined, repeating the operations for obtaining an image and/or scatterometry signal and determining at least one parameter for the plurality of production targets, wherein each imaging structure for each production target includes unresolved features.
2. A method of determining a parameter of a semiconductor target, comprising:
receiving a first set of scatterometry and imaging measurements from each of a plurality of reference targets with known variations of one or more parameters, wherein the first set of scatterometry and imaging measurements are obtained by:
a radiation source generating an incident beam of electromagnetic radiation,
illumination optics directing the incident beam towards each of the reference targets,
scatterometry optics receiving an output beam that is reflected, diffracted, and/or scattered from each reference target in response to the incident beam and then directing at least a portion of the output beam from each reference target in the form of a scatterometry measurement towards a scatterometry detector,
the scatterometry detector obtaining the scatterometry measurement for each reference target from the scatterometry optics,
imaging optics receiving the output beam for each reference target and directing at least a portion of the output beam for each reference target in the form of an image measurement for each reference target towards an imaging detector, and
the imaging detector for obtaining the image measurement for each reference target from the imaging optics;
determining a signal response measurement (SRM) model based on the first set of scatterometry and imaging measurements;
training the SRM model based on the first set of scatterometry and imaging measurements and the known variations of the one or more parameters; and
inputting scatterometry and imaging measurements from a target into the SRM model so as to determine one or more unknown parameters, wherein the imaging measurements are obtained from structures composed of unresolved features.
3. The method of claim 2 , wherein the first set of scatterometry and imaging measurements are measurements from a CD-SEM (critical dimension scanning electron microscope), SEM, TEM (tunneling electron microscope), AFM (Atomic Force Microscope), or x-ray metrology system.
4. The method of claim 2 , wherein the known variations are a plurality of programmed set values of one or more DOE (design-of-experiment) wafers.
5. The method of claim 2 , wherein the known variations are determined by:
measuring a plurality of reference values from one or more DOE wafers;
interpolating a plurality of interpolated values by using a interpolation function; and
using the reference values and the interpolated values as the known variations.
6. The method of claim 2 , wherein the first set of scatterometry and imaging measurements are obtained from a plurality of DOE wafers with multiple programmed process variations.
7. The method of claim 6 , wherein the DOE wafers include photo resist layer process variations by programming focus and dose of a lithography tool.
8. The method of claim 6 , wherein the DOE wafers include underlayer process variations by programming the focus and dose of a lithography tool of one or more previous process steps and etch and deposition parameters of one or more etch and deposition process tools.
9. The method of claim 2 , wherein at least some of the first set of scatterometry and imaging measurements and the known variations are generated by simulators.
10. The method of claim 9 , wherein the generated scatterometry and imaging measurements and known variations include variations of multiple geometry, dispersion, process, and system parameters.
11. The method of claim 2 , wherein the first set of scatterometry and imaging measurements include measurements obtained from one or more DOE wafers and measurements generated by one or more simulators.
12. The method of claim 2 , wherein the first set of scatterometry and imaging measurements are obtained from multiple scatterometry targets and multiple imaging targets.
13. The method of claim 2 , wherein the first set of scatterometry and imaging measurements are obtained from device areas or targets that resemble device areas.
14. The method of claim 2 , wherein the first set of scatterometry and imaging measurements include measurements obtained at different metrology tool focus, wavelength and polarization.
15. The method of claim 2 , wherein the first set of scatterometry and imaging measurements include measurements from previous process steps.
16. The method of claim 2 , wherein the first set of scatterometry and imaging measurements include known parameter values.
17. The method of claim 2 , wherein the SRM model is arranged to use one or more of the following: PCA (Principal Components Analysis), an auto encoder, a Neural Network, or a linear model.
18. The method of claim 2 , wherein the SRM model is trained on simulated and real images, but then used only with real images to determine one or more unknown parameters.
19. The method of claim 2 , wherein the first set of scatterometry measurements are obtained from targets that produce multiple diffraction orders at a sensor.
20. The method of claim 2 , wherein the first set of scatterometry measurements are obtained from targets that produce multiple diffraction orders at a sensor for both X and Y overlay.
21. The method of claim 2 , wherein the first set of scatterometry measurements are obtained from targets that produce multiple diffraction orders at a sensor for both X and Y overlay from multiple layers of a structure.
22. The method of claim 2 , wherein the first set of imaging measurements are obtained from OCD (overlay-critical-dimension) targets.
23. A metrology apparatus for determining a parameter of a semiconductor target, comprising:
a radiation source for generating an incident beam of electromagnetic radiation;
illumination optics for directing the incident beam towards a target;
scatterometry optics for receiving an output beam that is reflected, diffracted, and/or scattered from a target in response to the incident beam and then directing at least a portion of the output beam in the form of a scatterometry signal towards a scatterometry detector;
the scatterometry detector for obtaining the scatterometry signal from the scatterometry optics;
imaging optics for receiving the output beam and directing at least a portion of the output beam in the form of an image of a target towards an imaging detector;
the imaging detector for obtaining the image from the imaging optics; and
a processor configured for performing at least some of the following operations with respect to the radiation source, illumination optics, scatterometry optics, imaging optics, scatterometry detector, and imaging detector:
receiving a first set of scatterometry and imaging measurements from each of a plurality of reference targets with known variations of one or more parameters;
determining a signal response measurement (SRM) model based on the first set of scatterometry and imaging measurements;
training the SRM model based on the first set of scatterometry and imaging measurements and the known variations of the one or more parameters; and
inputting scatterometry and imaging measurements from a target into the SRM model so as to determine one or more unknown parameters, wherein the imaging measurements are obtained from structures composed of unresolved features.
24. The apparatus of claim 23 being in the form of a CD-SEM (critical dimension scanning electron microscope), SEM, TEM (tunneling electron microscope), AFM (Atomic Force Microscope), or x-ray metrology system.
25. The apparatus of claim 23 , wherein the known variations are a plurality of programmed set values of one or more DOE (design-of-experiment) wafers, wherein the known variations are determined by:
measuring a plurality of reference values from one or more DOE wafers;
interpolating a plurality of interpolated values by using a interpolation function; and
using the reference values and the interpolated values as the known variations.
26. The apparatus of claim 23 , wherein the first set of scatterometry and imaging measurements are obtained from a plurality of DOE wafers with multiple programmed process variations, wherein the DOE wafers include photo resist layer process variations by programming focus and dose of a lithography tool.
27. The apparatus of claim 26 , wherein the DOE wafers further include underlayer process variations by programming the focus and dose of a lithography tool of one or more previous process steps and etch and deposition parameters of one or more etch and deposition process tools.
28. The apparatus of claim 23 , wherein at least some of the first set of scatterometry and imaging measurements and the known variations are generated by simulators.
29. The apparatus of claim 28 , wherein the generated scatterometry and imaging measurements and known variations include variations of multiple geometry, dispersion, process, and system parameters.
30. The apparatus of claim 23 , wherein the first set of scatterometry and imaging measurements include measurements obtained from one or more DOE wafers and measurements generated by one or more simulators.
31. The apparatus of claim 23 , wherein the first set of scatterometry and imaging measurements are obtained from multiple scatterometry targets and multiple imaging targets.
32. The apparatus of claim 23 , wherein the first set of scatterometry and imaging measurements are obtained from device areas or targets that resemble device areas.
33. The apparatus of claim 23 , wherein the first set of scatterometry and imaging measurements include measurements obtained at different focus, wavelength and polarization settings for the apparatus.
34. The apparatus of claim 23 , wherein the first set of scatterometry and imaging measurements include measurements from previous process steps.
35. The apparatus of claim 23 , wherein the SRM model is trained on simulated and real images, but then used only with real images to determine one or more unknown parameters.
36. The apparatus of claim 23 , wherein the first set of scatterometry measurements are obtained from targets that produce multiple diffraction orders at a sensor.
37. The apparatus of claim 23 , wherein the first set of scatterometry measurements are obtained from targets that produce multiple diffraction orders at a sensor for both X and Y overlay.
38. The apparatus of claim 23 , wherein the first set of scatterometry measurements are obtained from targets that produce multiple diffraction orders at a sensor for both X and Y overlay from multiple layers of a structure.
39. The apparatus of claim 23 , wherein the first set of imaging measurements are obtained from OCD (overlay-critical-dimension) targets.
40. The apparatus of claim 23 , wherein the first set of imaging measurements are obtained from targets composed of unresolved features.