IP Library Granted Patent US 10,109,661
Granted Patent B2
US 10,109,661 · App. 14/990,934 · Granted Oct 23, 2018

Electronic device

Inventors: Takeshi Aoki (Kanagawa, JP); Yoshiyuki Kurokawa (Kanagawa, JP); Takayuki Ikeda (Kanagawa, JP); Hikaru Tamura (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/14603G09G3/3648H01L27/14612H01L27/14616H01L27/14625H01L27/14636H01L27/14641H01L27/14643H01L29/7869G09G2354/00
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Quick Facts
Patent No.
US 10,109,661
App. No.
14/990,934
Granted
Oct 23, 2018
Kind
B2
Abstract

An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

Claims (29)

1. An electronic device comprising:

a first transistor electrically connected to a pixel electrode and a video data signal line; and

a second transistor electrically connected to a photodiode,

wherein the second transistor is electrically connected to a node storing charge,

wherein a shielding wire is placed between the node and the video data signal line electrically connected to the first transistor, and

wherein the shielding wire is placed between the node and a photosensor charge transmit signal line electrically connected to a gate of the second transistor.

2. The electronic device according to claim 1 , wherein the shielding wire is a common line having a fixed potential.

3. The electronic device according to claim 1 , further comprising a liquid crystal element comprising the pixel electrode.

4. The electronic device according to claim 1 , wherein the second transistor comprises a channel formation region comprising an oxide semiconductor.

5. An electronic device comprising:

a first transistor electrically connected to a pixel electrode and a video data signal line; and

a second transistor electrically connected to a photodiode,

wherein the second transistor is electrically connected to a node storing charge,

wherein a shielding wire is placed between the node and the video data signal line electrically connected to the first transistor, and

wherein the shielding wire is placed between the node and a photodiode reset signal line electrically connected to the photodiode.

6. The electronic device according to claim 5 , wherein the shielding wire is a common line having a fixed potential.

7. The electronic device according to claim 5 , further comprising a liquid crystal element comprising the pixel electrode.

8. The electronic device according to claim 5 , wherein the second transistor comprises a channel formation region comprising an oxide semiconductor.

9. An electronic device comprising:

a first transistor electrically connected to a pixel electrode and a video data signal line;

a second transistor electrically connected to a photodiode;

a third transistor a gate of which is a node storing charge; and

a fourth transistor electrically connected to the third transistor,

wherein the second transistor is electrically connected to the node,

wherein a shielding wire is placed between the node and the video data signal line electrically connected to the first transistor, and

wherein the shielding wire is placed between the node and a photosensor reference signal line electrically connected to a gate of the fourth transistor.

10. The electronic device according to claim 9 , wherein the shielding wire is a common line having a fixed potential.

11. The electronic device according to claim 9 , further comprising a liquid crystal element comprising the pixel electrode.

12. The electronic device according to claim 9 , wherein the second transistor comprises a channel formation region comprising an oxide semiconductor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2016
From: AOKI, TAKESHI; KUROKAWA, YOSHIYUKI; IKEDA, TAKAYUKI; TAMURA, HIKARU
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 037827/0410 →
Priority Claims (1)
JP 2010-198928 · Sep 6, 2010 · national
Continuity (2)
Division 13224655 · Sep 2, 2011
Related Publication 20160126270A1 · May 5, 2016