Organic light emitting display apparatus
An OLED apparatus that may include a reflection-anode, a transparent-cathode, and a plurality of stacks between the reflection-anode and the transparent-cathode, wherein, among the plurality of stacks, a thickness of the stack disposed relatively close to the transparent-cathode is larger than a thickness of the stack disposed relatively close to the reflection-anode so that it is possible to optimize a micro-cavity of light emitted from the plurality of stacks, thereby improving a light-emission efficiency and a color reproduction ratio and reducing a color change rate in accordance with a viewing angle.
1. An organic light emitting display (OLED) apparatus comprising:
a reflection-anode;
a transparent layer directly on the reflection-anode;
a first stack directly on the transparent layer, wherein the first stack includes an electron transport layer and at least one organic layer having light-emitting dopant of an arylamine-based compound for emitting blue light;
a first charge generation layer on the first stack, wherein the first charge generation layer includes a first N-type charge generation layer doped with alkali-based metal, and a first P-type charge generation layer;
a second stack on the first charge generation layer, wherein the second stack includes at least one organic layer having light-emitting dopant of an iridium-based compound for yellow-green light;
a second charge generation layer on the second stack, wherein the second charge generation layer includes a second N-type charge generation layer doped with alkali-based metal, and a second P-type charge generation layer;
a third stack on the second charge generation layer, wherein the third stack includes at least one organic layer having light-emitting dopant of the arylamine-based compound for emitting blue light; and
a transparent-cathode on the third stack;
wherein, T 1 indicates a distance from a lower surface of the transparent layer to an interface between the first N-type charge generation layer and the first P-type charge generation layer, T 2 indicates a distance from the interface between the first N-type charge generation layer and the first P-type charge generation layer to an interface between the second N-type charge generation layer and the second P-type charge generation layer, and T 3 indicates a distance from the interface between the second N-type charge generation layer and the second P-type charge generation layer to an upper surface of the transparent-cathode, the T 1 , T 2 and T 3 satisfy a thickness ratio of T 1 :T 2 :T 3 =16%:36%:48%,
wherein the light emitting device has a color reproduction ratio of 99% or more than 99%, and a color change value (Δu′v′) of 0.05 or less than 0.05 within a viewing angle range from 0° to 60°.
2. The OLED apparatus according to claim 1 , wherein a peak wavelength of light emitted from the first stack is within a range from 440 nm to 480 nm, a peak wavelength of light emitted from the second stack is within a range from 540 nm to 580 nm, and a a peak wavelength of light emitted from the third stack is within a range from 440 nm to 480 nm.
3. The OLED apparatus according to claim 1 , wherein at least one among the first stack, the second stack and the third stack includes an auxiliary emission layer, and the auxiliary emission layer includes a light-emitting dopant for emitting light.
4. The OLED apparatus according to claim 1 , wherein at least one of among the first stack, the second stack and the third stack includes at least one among a hole injecting layer (HIL), a hole transporting layer (HTL), an electron transporting layer (ETL), an electron injecting layer (EIL), a hole blocking layer (HBL), an electron blocking layer (EBL).
5. The OLED apparatus according to claim 1 , wherein light emitted from at least one among the first stack, the second stack and the third stack passes through the transparent-cathode.