Method of controlling temperature of non-volatile storage device
A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.
1. A method of controlling a temperature of a non-volatile storage device, the method comprising:
detecting the temperature of the non-volatile storage device which is represented by a value measured by a temperature measuring sensor;
determining whether the temperature of the non-volatile storage device is higher than a control engagement temperature; and
adjusting a data I/O performance level P according to Formula 1 below if the temperature of the non-volatile storage device is higher than the control engagement temperature,
P
=
P
max
×
β
×
(
1
-
α
Δ
T
Δ
T
b
)
(
1
)
wherein, P max denotes a maximum data I/O performance level of the non-volatile storage device,
ΔT denotes a difference between the temperature of the non-volatile storage device and a reference temperature,
ΔT b denotes a difference between a maximum threshold temperature of the non-volatile storage device and the reference temperature, wherein ΔT b is greater than zero, and
α and β are control parameters of the non-volatile storage device,
the non-volatile storage device comprises:
a substrate; and
a memory controller, a volatile memory, and a non-volatile memory that are mounted on the substrate, and
wherein the temperature measuring sensor is disposed on a surface of or adjacent to at least one of the memory controller, the volatile memory, the non-volatile memory, and the substrate,
the memory controller is configured to receive a temperature value from the temperature measuring sensor, and
based on the received temperature value, the memory controller is configured to control the data I/O performance level according to Formula 1.
2. The method of claim 1 , wherein the data I/O performance level is a data I/O speed.
3. The method of claim 2 , wherein the adjusting of the data I/O performance level P comprises controlling at least one of a number of data I/O channels and a number of ways, in order to control the data I/O speed.
4. The method of claim 2 , wherein the adjusting of the data I/O performance level P comprises controlling a speed of a write/read operation with respect to the non-volatile storage device, in order to control the data I/O speed.
5. The method of claim 4 , wherein the controlling of speed of the write/read operation with respect to the non-volatile storage device is performed according to a Tprog function.
6. The method of claim 1 , wherein the reference temperature is lower than the control engagement temperature.
7. The method of claim 1 , wherein the memory controller comprises a firmware capable of performing the determining of whether the temperature of the non-volatile storage device is higher than the control engagement temperature and the adjusting of the data I/O performance level P.
8. The method of claim 1 , further comprising, after the adjusting of the data I/O performance level P:
determining whether the temperature of the non-volatile storage device is lower than the control engagement temperature; and
setting the data I/O performance level P to a maximum data I/O performance level P max if the temperature of the non-volatile storage device is lower than the control engagement temperature.
9. The method of claim 1 , wherein the determining of whether the temperature of the non-volatile storage device is higher than the control engagement temperature is repeated at intervals.
10. The method of claim 9 , wherein a period for the determining of whether the temperature of the non-volatile storage device is higher than the control engagement temperature is in a range of about one second to about one hour.
11. The method of claim 9 , further comprising adjusting the data I/O performance level P according to Formula 1 if the temperature of the non-volatile storage device is higher than the control engagement temperature.
12. A method of controlling a temperature of a non-volatile storage device, the non-volatile storage device comprising a substrate and a memory controller, a volatile memory, and a non-volatile memory that are mounted on the substrate, the method comprising:
detecting a temperature at predetermined time intervals by using a temperature measuring sensor and sending a temperature value to the memory controller; and
controlling, by using the memory controller, a speed of a write/read operation with respect to the non-volatile memory based on the temperature value,
wherein the controlling of the speed of the write/read operation with respect to the non-volatile memory comprises:
setting the write/read speed to a maximum value if the temperature is less than or equal to a control engagement temperature, and
applying at least one of (a), (b), and (c) according to Formula 2 below if the temperature is higher than the control engagement temperature,
P
=
P
max
×
f
(
Δ
T
Δ
T
b
)
(
2
)
(a) reducing a number of data I/O channels;
(b) reducing a number of data I/O ways; and
(c) decreasing a speed of a data write/read operation with respect to the non-volatile memory,
wherein P denotes a data I/O performance level,
P max denotes a maximum data I/O performance level of the non-volatile storage device,
ΔT denotes a difference between the temperature of the non-volatile storage device and a reference temperature, and
ΔT b denotes a difference between a maximum threshold temperature of the non-volatile storage device and the reference temperature, wherein ΔT b is greater than zero,
wherein the temperature measuring sensor is disposed on a surface of or adjacent to at least one of the memory controller, the volatile memory, the non-volatile memory, and the substrate.
13. The method of claim 12 , wherein Formula 2 below is identical to Formula 1,
P
=
P
max
×
β
×
(
1
-
α
Δ
T
Δ
T
b
)
(
2
)
wherein, α and β are control parameters of the non-volatile storage device.
14. The method of claim 12 , wherein the controlling of the speed of the write/read operation with respect to the non-volatile memory comprises applying (c) decreasing the speed of the data write/read operation with respect to the non-volatile memory.
15. The method of claim 14 , wherein the decreasing the speed of the data write/read operation with respect to the non-volatile memory is performed according to a Tprog function.
16. A method of controlling a temperature of a non-volatile storage device, the non-volatile storage device comprising a substrate; and a memory controller, a volatile memory, and a non-volatile memory that are mounted on the substrate, the method comprising:
setting a data I/O performance level to a maximum level;
detecting the temperature of the non-volatile storage device using a temperature measuring sensor disposed on a surface of or adjacent to at least one of the memory controller, the volatile memory, the non-volatile memory, and the substrate;
determining whether the temperature of the non-volatile storage device is higher than a control engagement temperature; and
adjusting the data I/O performance level to a value lower than the maximum level if the temperature of the non-volatile storage device is higher than the control engagement temperature, or keeping the data I/O performance level at the maximum level if the temperature of the non-volatile storage device is equal to or lower than the control engagement temperature,
wherein the non-volatile storage device includes a NAND memory, and
the adjusting of the data I/O performance level comprises controlling a speed of a write/read operation with respect to the non-volatile storage device by using a Tprog function, in order to control data I/O speed.
17. The method of claim 16 , wherein adjusting the data I/O performance level P includes adjusting the data I/O performance level according to Formula 1 below
P
=
P
max
×
β
×
(
1
-
α
Δ
T
Δ
T
b
)
(
1
)
wherein P max denotes the maximum level of the data I/O performance level of the non-volatile storage device,
ΔT denotes a difference between the temperature of the non-volatile storage device and a reference temperature,
ΔT b denotes a difference between a maximum threshold temperature of the non-volatile storage device and the reference temperature, wherein ΔT b is greater than zero, and
α and β are control parameters of the non-volatile storage device.