Display device, method of manufacturing the same, and electronic apparatus

1. A display device comprising:

a plurality of pixels, at least one of the plurality of pixels includes

a light emitting element;

a drive transistor configured to supply a drive current to the light emitting element, the drive transistor including a first channel region, the first channel region including

a first portion of a semiconductor layer,

a first gate electrode, and

an electrically-conductive layer,

wherein the first channel region is formed on a first insulating layer, and the electrically-conductive layer is formed between the first insulating layer and a substrate;

a write transistor configured to transfer a pixel voltage corresponding to a luminance intensity of the light emitting element, the write transistor including a second channel region, the second channel region including

a second portion of the semiconductor layer, and

a second gate electrode,

wherein the second channel region is formed on the first insulating layer;

a first metal wiring in contact with the semiconductor layer via a first contact region; and

a second metal wiring in contact with the semiconductor layer via a second contact region, the first channel region being within a current path between the first contact region and the second contact region,

wherein the write transistor does not include any electrically-conductive layers between the first insulating layer and the substrate,

wherein a first part of the current path overlaps with the electrically-conductive layer, and

wherein a second part of the current path does not overlap with the electrically-conductive layer.

2. The display device according to claim 1 ,

wherein the at least one of the plurality of pixels further includes a capacitor having a first node and a second node,

wherein the write transistor is connected between the first node of the capacitor and a data line,

wherein the first gate electrode of the drive transistor is connected to the first node of the capacitor, and

wherein the second node of the capacitor is connected to an anode electrode of the light emitting element.

3. The display device according to claim 1 , wherein the electrically-conductive layer and the first gate electrode include a same material.

4. The display device according to claim 3 , wherein the same material is molybdenum (Mo).

5. The display device according to claim 1 , wherein only one insulating layer is disposed between the electrically-conductive layer and the first portion of the semiconductor layer of the drive transistor.

6. The display device according to claim 1 , wherein the semiconductor layer within the current path includes a bent-shaped portion.

7. The display device according to claim 6 , wherein the semiconductor layer within the current path includes a “U” shaped portion.

8. The display device according to claim 6 , wherein the semiconductor layer within the current path includes a plurality of bent-shaped portions, and

wherein at least one of the plurality of bent-shaped portions does not overlap with the first gate electrode or the electrically-conductive layer.

9. The display device according to claim 1 , wherein the drive transistor further includes a second insulating layer, and

wherein the first channel region is disposed between the first insulating layer and the second insulating layer.

10. The display device according to claim 1 , wherein the write transistor further includes a second insulating layer, and

wherein the second channel region is disposed between the first insulating layer and the second insulating layer.

11. The display device according to claim 1 , wherein the drive transistor further includes a second insulating layer and a third insulating layer,

wherein the first gate electrode is formed on the second insulating layer, and

wherein the first gate electrode is disposed between the second insulating layer and the third insulating layer.

12. The display device according to claim 1 , wherein the write transistor further includes a second insulating layer and a third insulating layer,

wherein the second gate electrode is formed on the second insulating layer, and

wherein the second gate electrode is disposed between the second insulating layer and the third insulating layer.

13. The display device according to claim 1 , wherein, below the second channel region, the write transistor does not include any electrically-conductive layers between the first insulating layer and the substrate.

14. The display device according to claim 1 , wherein a width of the electrically-conductive layer in a cross-section including the first contact region and the second contact region is smaller than a distance between the first contact region and the second contact region in the cross-section.

15. The display device according to claim 14 , wherein the distance between the first contact region and the second contact region in the cross-section is larger than the width of the first gate electrode in the cross-section.

16. A display device comprising:

a plurality of pixels, at least one of the plurality of pixels includes

a light emitting element;

a drive transistor configured to supply a drive current to the light emitting element, the drive transistor including a first channel region, the first channel region

a first portion of a semiconductor layer,

a first gate electrode, and

an electrically-conductive layer,

wherein the first channel region is formed on a first insulating layer, and the electrically-conductive layer is formed between the first insulating layer and a substrate;

a write transistor configured to transfer a pixel voltage corresponding to a luminance intensity of the light emitting element, the write transistor including a second channel region, the second channel region including

a second portion of the semiconductor layer, and

a second gate electrode,

wherein the second channel region is formed on the first insulating layer;

a first metal wiring in contact with the semiconductor layer via a first contact region; and

a second metal wiring in contact with the semiconductor layer via a second contact region, the first channel region being within a current path between the first contact region and the second contact region,

wherein the write transistor does not include any electrically-conductive layers between the first insulating layer and the substrate,

wherein, in a plan view, the semiconductor layer within the current path has a recess portion above the electrically-conductive layer, and

wherein, in the plan view, the first contact region overlaps with the electrically-conductive layer, and

wherein, in the plan view, the second contact region overlaps with the electrically-conductive layer.

17. The display device according to claim 16 ,

wherein the at least one of the plurality of pixels further includes a capacitor having a first node and a second node,

wherein the write transistor is connected between the first node of the capacitor and a data line,

wherein the first gate electrode of the drive transistor is connected to the first node of the capacitor, and

wherein the second node of the capacitor is connected to an anode electrode of the light emitting element.

18. The display device according to claim 16 , wherein the electrically-conductive layer and the first gate electrode include a same material.

19. The display device according to claim 18 , wherein the same material is molybdenum (Mo).

20. The display device according to claim 16 , wherein only one insulating layer is disposed between the electrically-conductive layer and the first channel region of the drive transistor.

21. The display device according to claim 16 , wherein, in the plan view, at least a portion of the recess portion overlaps with the first gate electrode.

22. The display device according to claim 16 , wherein, in the plan view, the semiconductor layer within the current path has a plurality of recess portions above the electrically-conductive layer, and

wherein, in the plan view, at least one of the plurality of recess portions overlaps with the first gate electrode.

23. The display device according to claim 22 , wherein, in the plan view, each of the recess portions overlaps with the first gate electrode.

24. The display device according to claim 22 , wherein the plurality of recess portions includes a first recess portion and a second recess portion,

wherein, in the plan view, the first recess portion is a recess in a first side of the semiconductor layer, and

wherein, in the plan view, the second recess portion is a recess in a second side of the semiconductor layer that is opposite to the first side.

25. The display device according to claim 24 , wherein the first recess portion and the second recess portion are arranged in a staggered layout.

26. The display device according to claim 16 , wherein the drive transistor further includes a second insulating layer, and

wherein the first channel region is disposed between the first insulating layer and the second insulating layer.

27. The display device according to claim 16 , wherein the write transistor further includes a second insulating layer, and

wherein the second channel region is disposed between the first insulating layer and the second insulating layer.

28. The display device according to claim 16 , wherein the drive transistor further includes a second insulating layer and a third insulating layer,

wherein the first gate electrode is formed on the second insulating layer, and

wherein the first gate electrode is disposed between the second insulating layer and the third insulating layer.

29. The display device according to claim 16 , wherein the write transistor further includes a second insulating layer and a third insulating layer,

wherein the second gate electrode is formed on the second insulating layer, and

wherein the second gate electrode is disposed between the second insulating layer and the third insulating layer.

30. The display device according to claim 16 , wherein, below the second channel region, the write transistor does not include any electrically-conductive layers between the first insulating layer and the substrate,

wherein the at least one of the plurality of pixels includes a third metal wiring in contact with the semiconductor layer via a third contact region and a fourth metal wiring in contact with the semiconductor layer via a fourth contact region,

wherein the second channel region is within a second current path between the third contact region and the fourth contact region, and

wherein the current path between the third contact region and the fourth contact region does not overlap with any electrically-conductive layers between the first insulating layer and the substrate.