IP Library Granted Patent US 10,124,299
Granted Patent B2
US 10,124,299 · App. 15/259,531 · Granted Nov 13, 2018

Membrane based on graphene and method of manufacturing same

Inventors: In Soo Kim (Gwangju, KR); Euntae Yang (Gwangju, KR); Junho Song (Gwangju, KR); Chang-Min Kim (Gwangju, KR)
Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
B01D71/021B01D61/027B01D67/0072B01D67/0081B01D69/12B01D71/022B01D71/024C02F1/442B01D2325/02C02F2103/08
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Quick Facts
Patent No.
US 10,124,299
App. No.
15/259,531
Granted
Nov 13, 2018
Kind
B2
Abstract

Disclosed herein are a graphene-based membrane and a method of manufacturing the same. The graphene-based membrane includes: monolayer graphene containing defects; a deposition layer disposed on the defects; and nanopores surrounded by the deposition layer. The method of manufacturing a graphene-based membrane includes forming a monolayer graphene sheet and partially forming a deposition layer on the graphene sheet.

Claims (13)

1. A graphene-based membrane, comprising:

a monolayer graphene having defects; and

a deposition layer selectively deposited on boundaries of the defects, whereby forming pores surrounded by the deposition layer;

wherein the deposition layer comprises a material more hydrophilic than the monolayer graphene.

2. The graphene-based membrane according to claim 1 , wherein the deposition layer comprises at least one of a metal oxide and a metal.

3. The graphene-based membrane according to claim 1 , wherein the deposition layer is composed of a single layer.

4. The graphene-based membrane according to claim 1 , wherein the pores has a size of 0.1 nm to 1 μm.

5. A method of manufacturing a graphene-based membrane, comprising:

forming a monolayer graphene sheet having defects; and

forming a deposition layer on boundaries of the defects, whereby forming pores surrounded by the deposition layer;

wherein the deposition layer comprises a material more hydrophilic than the monolayer graphene.

6. The method according to claim 5 , wherein the graphene sheet is formed by chemical vapor deposition.

7. The method according to claim 5 , wherein the deposition layer is formed by atomic layer deposition.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 8, 2016
From: KIM, IN SOO; YANG, EUNTAE; SONG, JUNHO; KIM, CHANG-MIN
To: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
Reel/Frame 039676/0547 →
Priority Claims (2)
KR 10-2015-0126725 · Sep 8, 2015 · national
KR 10-2016-0115699 · Sep 8, 2016 · national
Continuity (1)
Related Publication 20170065939A1 · Mar 9, 2017
Cited By (1)
US 12,257,553