Semiconductor device burn-in temperature sensing
A remote diode temperature sensing circuit for use in a burn-in system to sense a temperature of a semiconductor device under test includes a temperature sense circuit and an adapter circuit. The temperature sense circuit is configured to output temperature sense currents (I s ) during a temperature sense routine. The adapter circuit is configured to drive mirrored sense currents (I ms ), which mirror the temperature sense currents, through a diode of the semiconductor device that is connected to an input/output package pin, and present voltage differences across the diode responsive to the mirrored sense currents to the temperature sense circuit. The temperature sense circuit is configured to discharge a temperature output signal that is indicative of the temperature of the diode based on the voltage differences.
1. A remote diode temperature sensing circuit for use in a burn-in system to sense a temperature of a semiconductor device under test having an integrated a diode connected to an input/output (I/O) package pin that is integral to the semiconductor device, the circuit comprising:
a temperature sense circuit that is external to the semiconductor device and is configured to output temperature sense currents (I s ) during a temperature sense routine;
an adapter circuit that is external to the semiconductor device and is configured to drive mirrored sense currents (I ms ), which mirror the temperature sense currents, through the diode and present voltage differences across the diode responsive to the mirrored sense currents to the temperature sense circuit; and
wherein the temperature sense circuit is configured to discharge a temperature output signal based on the voltage differences that is indicative of the temperature of the diode.
2. The remote diode temperature sensing circuit according to claim 1 , wherein the adapter circuit comprises:
a current measurement block configured to measure the temperature sense currents (I s ) output from the temperature sense circuit;
a forced current block configured to drive the mirrored sense currents (I ms ) through the diode;
a voltage measurement block configured to measure the voltage differences across the diode responsive to the driving of the mirrored sense currents through the diode; and
the force voltage block is configured to present the measured voltage differences to the temperature sense circuit.
3. The remote diode temperature sensing circuit according to claim 2 , wherein the adapter circuit comprises a current return block configured to drive the sense current (I s ) back to the temperature sense circuit.
4. The remote diode temperature sensing circuit according to claim 2 , wherein the temperature sense circuit is configured to generate the temperature sense currents (I s ) during a temperature sense routine.
5. The remote diode temperature sensing circuit according to claim 1 , wherein the I/O package pin is connected to core logic of the semiconductor device.
6. The remote diode temperature sensing circuit according to claim 1 , wherein the diode is an electrostatic discharge (ESD) diode.
7. A burn-in system comprising the remote diode temperature sensing circuit according to claim 1 .
8. An adapter circuit for use in a burn-in system for translating a temperature sense routine of a temperature sense circuit for application to a diode that is integral to a semiconductor device under test that is connected to an input/output (I/O) package pin that is integral to the semiconductor device, the adapter circuit being external to the semiconductor device and comprising:
a current measurement block configured to measure temperature sense currents (I s ) output from the temperature sense circuit;
a forced current block configured to drive mirrored sense currents (I ms ), which mirror the temperature sense currents, through the diode;
a voltage measurement block configured to measure voltage differences across the diode during the driving of the mirrored sense currents through the diode; and
a force voltage block configured to present the measured voltage differences to the temperature sense circuit.
9. The adapter circuit according to claim 8 , further comprising a current return block configured to deliver currents that match sense currents (I s ) back to the temperature sense circuit.
10. The adapter circuit according to claim 8 , wherein the I/O package pin is connected to core logic of the semiconductor device.
11. The adapter circuit according to claim 10 , wherein the diode is an electrostatic discharge (ESD) diode.
12. A method of sensing a temperature of a diode that is integral to a semiconductor device during burn-in testing comprising:
powering the semiconductor device and performing functional tests of core logic of the semiconductor device through I/O pins, which are integral to the semiconductor device;
generating temperature sense currents (I s ) using a temperature sense circuit that is external to the semiconductor device;
driving mirrored sense currents (I ms ), which mirror the temperature sense currents (I s ), through the diode;
measuring voltage differences across the diode during driving the mirrored sense currents through the diode;
presenting the voltage differences to the temperature sense circuit; and
generating an output signal that is indicative of a temperature of the diode using the temperature sense circuit based on the presented voltage differences.
13. The method according to claim 12 , wherein driving mirrored sense currents (I ms ) through the diode comprises driving the mirrored sense currents (I ms ) through an I/O pin of the semiconductor device.
14. The method according to claim 12 , wherein the diode is an electrostatic discharge (ESD) diode.
15. The method according to claim 12 , further comprising returning the sense current to the temperature sense circuit.
16. The method according to claim 12 , further comprising adjusting a temperature of the semiconductor device responsive to the output signal.