IP Library › Granted Patent US 10,126,436
Granted Patent B2
US 10,126,436 · App. 15/737,221 · Granted Nov 13, 2018

Scintillator and method for manufacturing the same

Inventors: Hong Joo Kim (Daegu, KR); Hwanbae Park (Daejeon, KR); Sunghwan Kim (Chungcheongbuk-do, KR); Gul Rooh (Daegu, KR)
Assignee: Kyungpook National University Industry-Academic Cooperation Foundation
G01T1/2023C09K11/62C09K11/626C09K11/77C09K11/7772C30B11/003C30B11/006C30B29/12G01T1/202
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Quick Facts
Patent No.
US 10,126,436
App. No.
15/737,221
Granted
Nov 13, 2018
Kind
B2
Abstract

The present invention relates to a scintillator, a method for manufacturing the same, and an application for the same. The scintillator according to an embodiment of the present invention includes a matrix material including, as a main component, thallium, lanthanum, and a halogen element; and an activator doped onto the matrix material. The scintillator according to an embodiment of the present invention has a formula TlaLabXc:yCe, and in the formula: X is a halogen element; a=1, b=2, c=7, or a=2, b=1, c=5, or a=3, b=1, c=6; and y>0 and y≤0.5. The scintillator according to an embodiment of the present invention has a high efficiency of detecting radiations, a greater light yield, and an excellent fluorescence decay time characteristic.

Claims (22)

1. A scintillator comprising:

a matrix material comprising thallium, lanthanum, and a halogen element; and

an activator doped to the matrix material.

2. The scintillator of claim 1 , wherein the activator comprises cerium.

3. The scintillator of claim 2 , wherein a formula thereof is TlaLabXc:yCe, and in the formula: X is a halogen element; a=1, b=2, c=7, or a=2, b=1, c=5, or a=3, b=1, c=6; and y>0 and y≤0.5.

4. The scintillator of claim 1 , wherein the halogen element comprises at least one among Cl, Br and I.

5. The scintillator of claim 1 wherein the matrix material does not comprise an alkali element.

6. A scintillator comprising a matrix material doped with an activator, the matrix material comprising a thallium halide and a lanthanum halide,

wherein the matrix material comprises a material having a formula TlaLabXc, and in the formula, X is a halogen element; and a=1, b=2, c=7, or a=2, b=1, c=5, or a=3, b=1, c=6.

7. The scintillator of claim 6 , wherein the activator comprises a cerium halide.

8. A method for manufacturing a scintillator, the method comprising:

manufacturing a matrix material comprising thallium, lanthanum, and a halogen element; and

doping the matrix material with an activator.

9. The method for manufacturing a scintillator of claim 8 , wherein the manufacturing of the matrix material comprises adding a thallium halide and a lanthanum halide in a molar ratio of 1:2, 2:1, or 3:1.

10. The method for manufacturing a scintillator of claim 8 , wherein the doping of the activator comprises doping the matrix material with a cerium halide.

11. The method for manufacturing a scintillator of claim 8 , wherein the halogen element comprises at least one among Cl, Br and I.

12. The method for manufacturing a scintillator of claim 8 , further comprising growing a mixture of the matrix material and the activator into a single crystal, wherein

the growing the mixture into the single crystal comprises descending an ampoule in which the mixture is sealed in a Bridgman electric furnace while heating the ampoule, wherein in the growing the mixture into the single crystal:

the crystal is grown while the ampoule is lowered in the Bridgman electric furnace at a crystal growing part;

a product of a descent speed of the ampoule in the Bridgman electric furnace and a temperature gradient at the crystal growing part in the Bridgman electric furnace is set to a range of 0.2-0.3° C./hr; and

the temperature gradient at the crystal growing part is a rate of an amount of a temperature change with respect to a positional change at a crystal growing position in the Bridgman electric furnace.

13. The method for manufacturing a scintillator of claim 12 , wherein in the growing the mixture of the matrix material and the activator into the single crystal, a melting temperature of the mixture is 450-650° C.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 15, 2017
From: KIM, HONG JOO; KIM, SUNGHWAN; ROOH, GUL; PARK, HWANBAE
To: KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY- ACADEMIC COOPERATION FOUNDATION
Reel/Frame 044411/0787 →
Priority Claims (1)
KR 10-2015-0085447 · Jun 16, 2015 · national
Continuity (1)
Related Publication 20180172850A1 · Jun 21, 2018