Lithographic patterning
This disclosure provides embodiments of an approach that enforces coexistence of multiple, aligned block copolymer morphologies within a single patterning layer.
1. A method for creating patterns on a surface of a substrate, comprising depositing a polymer brush onto the surface of the substrate;
depositing a resist layer;
forming grating patterns onto the resists;
developing the grating patterns;
etching to transfer the grating pattern to the polymer brush;
depositing a block copolymer film onto to the substrate; and
forming a pattern on the surface of the substrate, said pattern comprising multiple morphologies on a single patterning layer.
2. The method of claim 1 , wherein the block copolymer film comprises PS-PMMA (polystyrene-poly(methylmethacrylate)), PS-P2VP (polystyrene-b-2-vinylpyridine), PS-P4VP (polystyrene-b-4-vinylpyridine), PS-PEO (polystyrene-b-polyethylene oxide), or PS-PDMS (polystyrene-b-polydimethylsiloxane).
3. The method of claim 1 , wherein the block copolymer has an average molecular weight ranging approximately from about 5 kg/mol to about 500 kg/mol.
4. The method of claim 2 , wherein the block copolymer comprises more than 2 copolymers.
5. The method of claim 1 , wherein forming grating patterns onto the resists is achieved by electron beam lithography photolithography, ion beam lithography, laser lithography, interference lithography, or imprint lithography.
6. The method of claim 1 , further comprising:
plasma cleaning the substrate before depositing the polymer brush.
7. The method of claim 1 , further comprising:
annealing the block copolymer film.
8. The method of claim 1 , wherein the block copolymer film has a predetermined pattern.
9. The method of claim 8 , wherein the predetermined pattern comprises lines.
10. The method of claim 8 , wherein the predetermined pattern comprises ordered dots.
11. The method of claim 10 , wherein the dots are structured into hexagonal dot arrays.
12. The method of claim 8 , wherein the predetermined pattern comprises lines and ordered dots.
13. The method of claim 1 , wherein the grating patterns have a pitch between about 40 nm and about 60 nm.
14. The method of claim 13 , wherein the pitch is from 42 nm to 54 nm.
15. The method of claim 1 , wherein the method further comprises varying a prepattern linewidth, varying a duty cycle, or varying a prepattern pitch within two regions of a prepattern.
16. The method of claim 1 , wherein the multiple morphologies comprise dots and lines.
17. The method of claim 1 , wherein the multiple morphologies comprise alternating dot array and line array regions.