Wafers having III-Nitride and diamond layers
Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A first SiC layer is formed on a silicon substrate, and using a carbon containing gas, a surface of the first SiC layer is carbonized to form carbon particles on the SiC layer. Then, a diamond layer is grown on the carbonized surface, where the carbon atoms act as seed particles for growing the diamond layer. A second SiC layer is formed on the diamond layer and a semiconductor layer having III-Nitride compounds is formed on the second SiC layer. Then, the silicon substrate and the first SiC layer are removed.
1. A wafer, comprising:
a semiconductor layer including a III-Nitride compound;
a SiC layer formed on the semiconductor layer;
an intermediate layer formed on the SiC layer;
a seed layer formed on the intermediate layer, the seed layer including diamond particles; and
a diamond layer formed on the seed layer.
2. The wafer of claim 1 , wherein the SiC layer includes cubic silicon carbide.
3. A method for forming a wafer, comprising:
forming a SiC layer on a silicon substrate;
forming a semiconductor layer including a III-Nitride compound on the SiC layer;
removing the silicon substrate to expose a surface of the SiC layer;
forming an intermediate layer on the exposed surface of the SiC layer;
forming a seed layer on the intermediate layer, the seed layer including diamond particles; and
growing a diamond layer on the seed layer.
4. The method of claim 3 , wherein the SiC layer includes cubic silicon carbide.
5. The method of claim 3 , wherein the step of forming the seed layer includes adhering the diamond particles to the intermediate layer and wherein the diamond particles act as seed particles for growing the diamond layer.
6. A wafer, comprising:
a semiconductor layer including a III-Nitride compound;
an intermediate layer formed on the semiconductor layer;
a seed layer formed on the intermediate layer, the seed layer including diamond particles; and
a diamond layer formed on the seed layer.
7. A method for forming a wafer, comprising:
forming a SiC layer on a silicon substrate;
forming a semiconductor layer including a III-Nitride compound on the SiC layer;
removing the silicon substrate and the SiC layer;
forming an intermediate layer on the SiC layer;
forming a seed layer on the intermediate layer, the seed layer including diamond particles; and
growing a diamond layer on the seed layer.
8. The method of claim 7 , wherein the SiC layer includes cubic silicon carbide.
9. The method of claim 7 , wherein the step of forming the seed layer includes adhering the diamond particles to the intermediate layer and wherein the diamond particles act as seed particles for growing the diamond layer.
10. A wafer, comprising:
a diamond layer having an oriented crystal structure;
a SiC layer formed on the diamond layer; and
a semiconductor layer including a III-Nitride compound and formed on the SiC layer.
11. The wafer of claim 10 , wherein the SiC layer includes cubic silicon carbide.
12. A method for forming a wafer, comprising:
forming an intermediate layer on a silicon substrate;
forming a seed layer on the intermediate layer, the seed layer including diamond particles;
growing a diamond layer on the seed layer;
forming a SiC layer on the diamond layer;
forming a semiconductor layer including a III-Nitride compound on the SiC layer; and
removing the silicon substrate, seed layer and intermediate layer.
13. The method of claim 12 , wherein the SiC layer includes cubic silicon carbide.
14. The method of claim 12 , further comprising, prior to the step of removing the silicon substrate, seed layer and intermediate layer:
forming one or more electronic components in the semiconductor layer.
15. The method of claim 12 , wherein the diamond layer has an oriented crystal structure.
16. A method for forming a wafer, comprising:
forming a first SiC layer on a silicon substrate;
carbonizing a surface of the first SiC layer;
growing a diamond layer on the carbonzied surface of the first SiC layer;
forming a second SiC layer on the diamond layer;
forming a semiconductor layer on the second SiC layer, the semiconductor layer including a III-Nitride compound; and
removing the silicon substrate and the first SiC layer.
17. The method of claim 16 , wherein at least one of the first and second SiC layers includes cubic silicon carbide.
18. The method of claim 16 , further comprising, prior to the step of forming a second SiC layer:
polishing a surface of the diamond layer,
wherein the second SiC layer is formed on the polished surface of the diamond layer.
19. The method of claim 16 , further comprising, prior to the step of removing the silicon substrate and the first SiC layer:
forming one or more electronic components in the semiconductor layer.
20. The method of claim 16 , wherein the diamond layer has an oriented crystal structure.