Method for depositing transparent conducting oxides

1. A method of preparing a light transmitting and electrically conducting oxide (TCO) film using atomic layer deposition (ALD), comprising:

providing a first metal precursor comprising cyclopentadienyl indium capable of forming a TCO film on a substrate, the first metal precursor characterized by a vapor deposition temperature and a thermal degradation temperature wherein the deposition temperature 100° C. to 225° C.;

providing a plurality of different oxidizing reactants consisting of O 2 and H 2 O selected to facilitate growth of the TCO film on the substrate when the plurality of oxidizing reactants are used in combination with each other wherein the plurality of oxidizing reactants comprises a first oxidizing reactant and a second oxidizing reactant, wherein the first and the second oxidizing reactants are selected from the group consisting of water and oxygen;

performing a number of ALD cycles at the deposition temperature, to form the TCO film on the substrate, each ALD cycle comprises exposing the substrate to the first metal precursor for a first predetermined period and exposing the substrate to the plurality of oxidizing reactants for at least one second predetermined period, and

wherein the growth rate of the TCO film is facilitated by exposure of the substrate to the combination of the plurality of oxidizing reactants.

2. The method of claim 1 , wherein exposing the substrate to the plurality of oxidizing reactants is performed simultaneously.

3. The method of claim 1 , wherein the TCO film is an indium-tin oxide film and the ALD cycle further comprises a tin oxide deposition step.

4. The method of claim 1 , wherein the substrate comprises a polymer.

5. A method of forming a light transmitting and electrically conducting indium based metal oxide film on a substrate by performing a plurality of atomic layer deposition (ALD) cycles within a deposition chamber, each ALD cycle comprising:

exposing the substrate within the deposition chamber to a first metal precursor comprising cyclopentadienyl indium, the substrate at a deposition temperature between 100° C.-225° C.;

purging the deposition chamber with an inert purge gas;

exposing the substrate to a first oxidizing reactant consisting of O 2 or H 2 O to facilitate formation of a monolayer of indium oxide on the substrate;

exposing the substrate to a second oxidizing reactant consisting of O 2 or H 2 O and different than the first oxidizing reactant to further facilitate the formation of the indium oxide monolayer on the substrate; and

purging the deposition chamber with an inert purge gas,

wherein the cyclopentadienyl ligand is substantially released from the cyclopentadienyl indium on the substrate by one of the first oxidizing reactant and the second oxidizing reactant, thereby forming the indium metal based oxide film on the substrate.

6. The method of claim 5 , wherein exposure of the substrate to the first oxidizing reactant and exposure of the substrate to the second oxidizing reactant is performed simultaneously and without an intervening purging of the deposition chamber with the inert purge gas.

7. The method of claim 5 , further comprising an intervening purging of the deposition chamber with the inert purge gas between exposure of the substrate to the first oxidizing reactant and exposure of the substrate to the second oxidizing reactant is performed simultaneously and without an intervening purging of the deposition chamber.

8. The method of claim 7 , further comprising incorporating the indium-tin oxide film into one of a display device and a photovoltaic device.

9. The method of claim 5 , wherein the first oxidizing reactant is O 2 and the second oxidizing reactant is H 2 O and further comprising an intervening purging of the deposition chamber with the inert purge gas between the exposing of the substrate to O 2 and the exposing of the substrate to the H 2 O.

10. The method of claim 5 , wherein the first oxidizing reactant is H 2 O and the second oxidizing reactant is O 2 and further comprising an intervening purging of the deposition chamber with the inert purge gas between the exposing of the substrate to H 2 O and the exposing of the substrate to the O 2 .

11. The method of claim 5 , further comprising:

exposing the substrate to a second metal precursor comprising tetrakis(dimethylamino) tin;

purging the deposition chamber with an inert purge gas;

exposing the substrate to a third oxidizing reactant to facilitate formation of a tin oxide monolayer on the substrate;

purging the deposition chamber with an inert purge gas, wherein the ratio of indium oxide to tin oxide is selected such that a light transmitting and electrically conducting indium-tin oxide film is formed on the substrate.