Multilayer structure including diffusion barrier layer and device including the multilayer structure
A multilayer structure includes a first material layer, a second material layer, and a diffusion barrier layer. The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.
1. A multilayer structure comprising:
a first material layer;
a second material layer connected to the first material layer, the second material layer being spaced apart from the first material layer; and
a diffusion barrier layer between the first material layer and the second material layer, the diffusion barrier layer including a non-graphene-based two-dimensional (2D) material.
2. The multilayer structure of claim 1 , wherein the 2D material includes a metal chalcogenide-based material having a 2D crystal structure.
3. The multilayer structure of claim 2 , wherein
the metal chalcogenide-based material includes at least one metal element selected from the group consisting of molybdenum (Mo), tungsten (W), niobium (Nb), vanadium (V), tantalum (Ta), titanium (Ti), zirconium (Zr), hafnium (Hf), technetium (Tc), rhenium (Re), ruthenium (Ru), cobalt (Co), palladium (Pd), platinum (Pt), copper (Cu), gallium (Ga), indium (In), tin (Sn), germanium (Ge), and lead (Pb), and the metal chalcogenide-based material includes at least one chalcogen element selected from the group consisting of sulfur (S), selenium (Se), tellurium (Te), and oxygen (O).
4. The multilayer structure of claim 1 , wherein the 2D material includes a transition metal dichalcogenide (TMDC).
5. The multilayer structure of claim 1 , wherein the 2D material has a trigonal prismatic crystal structure or an octahedral crystal structure.
6. The multilayer structure of claim 1 , wherein the diffusion barrier layer has a thickness of greater than 0 nm and less than or equal to about 5 nm.
7. The multilayer structure of claim 1 , wherein the diffusion barrier layer has a thickness of greater than 0 nm and less than or equal to about 3 nm.
8. The multilayer structure of claim 1 , wherein the diffusion barrier layer has a resistivity of about 10 −4 Ω·cm to about 10 −2 Ω·cm.
9. The multilayer structure of claim 1 , wherein the diffusion barrier layer is doped with a dopant.
10. The multilayer structure of claim 1 , wherein
the first material layer includes an insulator, and
the second material layer includes a conductor.
11. The multilayer structure of claim 1 , wherein
the first material layer includes a semiconductor, and
the second material layer includes a conductor.
12. The multilayer structure of claim 1 , further comprising:
a conductor;
an understructure; and
an insulating material layer on the understructure, wherein
the insulating material layer defines an opening,
the diffusion barrier layer covers the insulating material layer in the opening,
the conductor covers the diffusion barrier layer in the opening,
the first material layer includes at least a part of one of the understructure and the insulating material layer, and
the second material layer includes at least a part of the conductor.
13. The multilayer structure of claim 1 , further comprising:
an adhesion layer between the diffusion barrier layer and one of the first and second material layers.
14. The multilayer structure of claim 13 , wherein
the adhesion layer includes at least one metal selected from the group consisting of molybdenum (Mo), tungsten (W), niobium (Nb), vanadium (V), tantalum (Ta), titanium (Ti), zirconium (Zr), hafnium (Hf), technetium (Tc), rhenium (Re), ruthenium (Ru), cobalt (Co), palladium (Pd), platinum (Pt), copper (Cu), gallium (Ga), indium (In), tin (Sn), germanium (Ge), and lead (Pb).
15. The multilayer structure of claim 13 , wherein a metal in the adhesion layer is the same as a metal in the diffusion barrier layer.
16. The multilayer structure of claim 1 , wherein
the diffusion barrier layer includes different types of a plurality of 2D material layers, and
a first 2D material layer among the plurality of 2D material layers includes the non-graphene based 2D material.
17. The multilayer structure of claim 1 , wherein at least a part of the multilayer structure is an interconnection for an electronic device.
18. A device comprising:
the multilayer structure of claim 1 .
19. An electronic device comprising:
the multilayer structure of claim 1 ;
an understructure;
an insulating material layer on the understructure, the insulating material layer defining an opening; and
a conductor, wherein
the diffusion barrier layer covers the opening of the insulating material layer; and
the conductor is on the diffusion barrier layer in the opening,
the first material layer includes at least a part of one of the understructure and the insulating material layer, and
the second material layer includes at least a part of the conductor.
20. The electronic device of claim 19 , wherein the 2D material includes a metal chalcogenide-based material having a 2D crystal structure.
21. The electronic device of claim 20 , wherein the metal chalcogenide-based material includes at least one metal element selected from the group consisting of molybdenum (Mo), tungsten (W), niobium (Nb), vanadium (V), tantalum (Ta), titanium (Ti), zirconium (Zr), hafnium (Hf), technetium (Tc), rhenium (Re), ruthenium (Ru), cobalt (Co), palladium (Pd), platinum (Pt), copper (Cu), gallium (Ga), indium (In), tin (Sn), germanium (Ge), and lead (Pb), and the metal chalcogenide-based material includes at least one chalcogen element selected from the group consisting of sulfur (S), selenium (Se), tellurium (Te), and oxygen (O).
22. The electronic device of claim 19 , wherein the diffusion barrier layer has a thickness of greater than 0 nm and less than or equal to about 5 nm.
23. The electronic device of claim 19 , wherein
the understructure includes a semiconductor region, and
the diffusion barrier layer limits a material from diffusing between the semiconductor region and the conductor.
24. The electronic device of claim 19 , wherein the diffusion barrier layer limits a material from diffusing between the insulating material layer and the conductor.
25. The electronic device of claim 19 , further comprising:
an adhesion layer between the diffusion barrier layer and the conductor.
26. The electronic device of claim 19 , comprising:
an interconnect portion, wherein
the interconnect portion includes an active device portion on a substrate portion,
the interconnect portion is on the active device portion, and
the interconnect portion includes the insulating material layer, the diffusion barrier layer, and the conductor.
27. The multilayer structure of claim 1 , wherein
the non-graphene-based two-dimensional (2D) material of the diffusion barrier includes at least one metal element selected from the group consisting of tungsten (W), niobium (Nb), vanadium (V), tantalum (Ta), titanium (Ti), zirconium (Zr), hafnium (Hf), technetium (Tc), rhenium (Re), ruthenium (Ru), cobalt (Co), palladium (Pd), platinum (Pt), copper (Cu), gallium (Ga), indium (In), tin (Sn), germanium (Ge), and lead (Pb).
28. The multilayer structure of claim 27 , wherein
the non-graphene-based two-dimensional (2D) material of the diffusion barrier includes at least one metal element selected from the group consisting of tungsten (W), niobium (Nb), vanadium (V), tantalum (Ta), titanium (Ti), zirconium (Zr), hafnium (Hf), technetium (Tc), rhenium (Re), ruthenium (Ru), cobalt (Co), palladium (Pd), platinum (Pt), copper (Cu), tin (Sn), and lead (Pb).