Vertical memory devices
According to example embodiments, a vertical memory device includes a low resistance layer on a lower insulation layer, a channel layer on the low resistance layer, a plurality of vertical channels on the channel layer, and a plurality of gate lines. The vertical channels extend in a first direction that is perpendicular with respect to a top surface of the channel layer. The gate lines surround outer sidewalls of the vertical channels, and are stacked in the first direction and are spaced apart from each other.
1. A vertical memory device, comprising:
a peripheral circuit on a lower substrate;
a lower insulation layer covering the peripheral circuit on the lower substrate;
a first channel layer on the lower insulation layer;
a second channel layer over the first channel layer;
an insulation layer interposed between the first channel layer and the second channel layer;
a plurality of vertical channels on the first channel layer, the vertical channels extending in a first direction that is perpendicular with respect to a top surface of the first channel layer; and
a plurality of gate lines, the gate lines surrounding outer sidewalls of the vertical channels, the gate lines being stacked in the first direction and spaced apart from each other in the first direction on the second channel layer.
2. The vertical memory device of claim 1 , further comprising:
a semiconductor pattern on the first channel layer, and the semiconductor pattern passing through the second channel layer and a lower most gate line,
wherein the vertical channels are on the semiconductor pattern.
3. The vertical memory device of claim 2 , wherein
the second channel layer contacting an outer sidewall of the semiconductor pattern, and
the second channel layer is configured to serve as a channel of a ground selection transistor (GST).
4. The vertical memory device of claim 1 , wherein
each of the vertical channels includes a first vertical channel and a second vertical channel,
wherein the first vertical channel is on the second channel layer, and
the second vertical channel is adjacent to an inner wall of the first vertical channel and extends through the second channel layer.
5. The vertical memory device of claim 4 , wherein the second vertical channel is in contact with the first channel layer.
6. The vertical memory device of claim 1 , further comprising:
a common source line in a portion of the second channel layer,
wherein the common source line is an impurity region doped with n-type impurities.
7. The vertical memory device of claim 6 , further comprising:
a common source line contact on the common source line,
wherein the source contact line contact extends in the first direction, and is spaced apart from the vertical channels.
8. The vertical memory device of claim 6 , further comprising:
a second semiconductor pattern between the common source line and the first channel layer.
9. The vertical memory device of claim 1 , wherein
the first channel layer and the second channel layer include polysilicon doped with p-type impurities, and
an impurity concentration of the first channel layer is greater than an impurity concentration of the second channel layer.
10. The vertical memory device of claim 1 , wherein a thickness of the first channel layer is greater than a thickness of the second channel layer.
11. The vertical memory device of claim 1 , wherein
the first channel layer includes a plurality of line patterns, and
each one of the line patterns overlaps at least one channel row including the plurality of the vertical channels.
12. The vertical memory device of claim 1 , further comprising:
a contact plug and a wiring being electrically connected with the peripheral circuit.
13. A vertical memory device, comprising:
a lower insulation layer on a lower substrate;
a first channel layer having a first impurity concentration on the lower insulation layer;
a second channel layer having a second impurity concentration lower than the first impurity concentration on the first channel layer, the second channel layer and the first channel layer being spaced apart from each other in a first direction that is perpendicular with respect to a top surface of the second channel layer;
a plurality of vertical channels on the first channel layer, the vertical channels extending in the first direction; and
a plurality of gate lines, the gate lines surrounding outer sidewalls of the vertical channels, the gate lines being stacked in the first direction and spaced apart from each other in the first direction on the second channel layer.
14. The vertical memory device of claim 13 , further comprising:
a peripheral circuit on the lower substrate,
wherein the lower insulation layer covers the peripheral circuit on the lower substrate.
15. The vertical memory device of claim 13 , wherein
the first channel layer and the second channel layer include polysilicon doped with p-type impurities.
16. The vertical memory device of claim 13 , further comprising:
a semiconductor pattern on the first channel layer, and the semiconductor pattern passing through the second channel layer and a lower most gate line,
wherein the second channel layer and the semiconductor pattern serve as a channel of a ground selection transistor (GST) including the lower most gate line.
17. The vertical memory device of claim 13 , further comprising:
a common source line doped with n-type impurities in a portion of the second channel layer; and
a common source line contact contacting the common source line.
18. A vertical memory device, comprising:
a peripheral circuit on a lower substrate;
a lower insulation layer on the peripheral circuit;
a first channel layer having a first impurity concentration on the lower insulation layer;
a second channel layer having a second impurity concentration lower than the first impurity concentration on the first channel layer, the second channel layer and the first channel layer being spaced apart from each other in a first direction that is perpendicular with respect to a top surface of the second channel layer;
a plurality of vertical channels on the first channel layer, the vertical channels extending in the first direction;
a plurality of gate lines, the gate lines surrounding outer sidewalls of the vertical channels, the gate lines being stacked in the first direction and spaced apart from each other in the first direction on the second channel layer; and
a contact plug and a wiring being electrically connected with the peripheral circuit.
19. The vertical memory device of claim 18 , further comprising:
a semiconductor pattern on the first channel layer, and the semiconductor pattern passing through the second channel layer and a lower most gate line,
wherein the second channel layer and the semiconductor pattern serve as a channel of a ground selection transistor (GST) including the lower most gate line.
20. The vertical memory device of claim 18 , further comprising:
a common source line doped with n-type impurities in a portion of the second channel layer; and
a common source line contact contacting the common source line.