IP Library Granted Patent US 10,138,543
Granted Patent B2
US 10,138,543 · App. 14/810,948 · Granted Nov 27, 2018

Method of analyzing growth of two-dimensional material

Inventors: Seongjun Jeong (Hwaseong-si, KR); Jaeho Lee (Seoul, KR); Seongjun Park (Seoul, KR)
Assignee: Samsung Electronics Co., Ltd.
C23C14/34C23C16/04C23C16/26C23C16/405C23C16/45525C23C16/52C23C16/56G06T7/0002G06T2207/10056G06T2207/20056G06T2207/30144G06T2207/30148
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Quick Facts
Patent No.
US 10,138,543
App. No.
14/810,948
Granted
Nov 27, 2018
Kind
B2
Abstract

A method of analyzing growth of a two-dimensional material includes forming a two-dimensional material layer includes defects on a substrate, depositing detection material layers on the defects, and one of (i) capturing an image of the two-dimensional material layer on which the detection material layers are deposited and processing the captured image, or (ii) obtaining map coordinates of the detection material layers and processing the obtained map coordinates.

Claims (32)

1. A method of analyzing growth of a two-dimensional material, the method comprising:

forming a two-dimensional material layer on a substrate, the two-dimensional material layer including defects;

depositing detection material layers on the defects, the detection material layers including a dielectric substance, the dielectric substance being an inorganic material that is a nitride,

wherein the nitride is one of AlN, Si 3 N 4 , and HfN 4 ; and one of

capturing an image of the two-dimensional material layer on which the detection material layers are deposited and processing the captured image, or

obtaining map coordinates of the detection material layers and processing the obtained map coordinates.

2. The method of claim 1 , wherein the two-dimensional material is graphene or a transition metal dichalcogenide (TMD) material.

3. The method of claim 1 , wherein the depositing detection material layers includes using a dry deposition method or a wet deposition method.

4. The method of claim 3 , wherein the dry deposition method is one of an atomic layer deposition (ALD) method, a chemical vapor deposition (CVD) method, and a sputtering method.

5. A method of analyzing growth of a two-dimensional material, the method comprising:

forming a two-dimensional material layer on a substrate, the two-dimensional material layer including defects;

depositing detection material layers on the defects, wherein the detection material layers include an organic material, wherein the organic material is one of Hydroxy Terminated Polystyrene, Hydroxy Terminated Poly(4-t-butyl styrene), Hydroxy terminated Poly(ethyl acrylate), Hydroxy terminated Poly(n-butyl acrylate), Hydroxy terminated Poly(n-butylmethacrylate), Hydroxy terminated Poly(benzyl propylacrylate), Hydroxy Terminated Poly(t-butyl methacrylate), Hydroxy Terminated Polyethylene, Hydroxy Terminated Poly(N-isopropyl acrylamide), Hydroxy (carbinol)Terminated Polydimethylsiloxane-Monofunctional, Hydroxy Terminated Poly(2-vinyl pyridine), and Hydroxy Terminated Poly(4-vinyl pyridine); and one of

capturing an image of the two-dimensional material layer on which the detection material layers are deposited and processing the captured image, or

obtaining map coordinates of the detection material layers and processing the obtained map coordinates.

6. The method of claim 1 , wherein the method includes the capturing the image of the two dimensional material layer and processing the captured image, and

the captured image of the two-dimensional material layer on which the detection material layers are deposited is one of a transmission electron microscope (TEM) image, a scanning electron microscope (SEM) image, a critical dimension (CD)-SEM image, and an optical microscope (OM) image.

7. The method of claim 1 , further comprising:

obtaining a captured image of the two-dimensional material layer, wherein

the method includes the obtaining map coordinates of the detection material layers and the processing the obtained map coordinates, and

the map coordinates are a number or a pair of numbers that represent a position of an arbitrary point in the captured image.

8. The method of claim 1 , wherein the defects include at least one of grain boundaries, parts in where the two-dimensional material is not formed on the substrate, and multilayer two-dimensional material regions.

9. The method of claim 1 , wherein the processing the captured image includes converting the captured image into quantified data.

10. The method of claim 9 , wherein the converting the captured image into quantified data includes:

putting particles on software in the image of the detection material layers, and

calculating a relative area occupied by the particles by using one of,

a difference in brightness among the particles,

a difference in chroma among the particles,

a difference in brightness between the particles and the substrate, and

a difference in chroma between the particles and the substrate.

11. The method of claim 10 , wherein converting the captured image into quantified data includes:

performing a Fourier transform on the captured image to obtain data of a specific bandwidth, and

calculating density of the particles put on software in the image of the detection material layers.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2015
From: JEONG, SEONGJUN; LEE, JAEHO; PARK, SEONGJUN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 036204/0973 →
Priority Claims (1)
KR 10-2014-0165501 · Nov 25, 2014 · national
Continuity (1)
Related Publication 20160148369A1 · May 26, 2016