Substrate processing apparatuses and systems
A system for processing substrates is described. In one embodiment, the system comprises a process chamber, at least one electrical resistance heater, and at least one Coanda effect gas injector.
1. A system for processing one or more substrates, the system comprising:
a process chamber;
a substrate support disposed in the process chamber to hold one or more substrates; and
at least one electrical resistance heater comprising a sinusoidal heating element having a plurality of peaks disposed to delineate an outer radius and a plurality of troughs disposed to delineate an inner radius; a cross-section width of the sinusoidal heating element being a first function of a radial position and a cross-section thickness of the sinusoidal heating element being a second function of the radial position so that the sinusoidal heating element provides a constant heat flux at the radial position and forms a constant spacing between facing side surfaces of the sinusoidal heating element, the at least one electrical resistance heater being disposed so as to heat the substrate support; wherein the radial position is a value that ranges from the inner radius to the outer radius.
2. The system of claim 1 , further comprising:
at least one Coanda effect gas injector disposed proximate a peripheral edge of the substrate support so as to provide a Coanda effect gas flow over a surface of the substrate support or the one or more substrates.
3. The system of claim 2 , wherein the at least one Coanda effect gas injector has a gas exit port, a gas flow channel, and a gas entry port; the gas exit port is in fluid communication with the gas flow channel, the gas flow channel is in fluid communication with the gas entry port; the gas flow channel is formed by at least one convex surface of the Coanda effect gas injector to produce the Coanda effect gas flow.
4. The system of claim 2 , wherein the at least one Coanda effect gas injector has a gas entry port, a plenum, a gas flow channel, and a gas exit port; the gas exit port is in fluid communication with the plenum via the gas flow channel, the gas entry port is in fluid communication with the plenum, the gas flow channel is formed by at least one convex surface of the Coanda effect gas injector so as to produce the Coanda effect gas flow.
5. The system of claim 2 , further comprising a rotary coupling connected with the substrate support for rotating the surface of the substrate support.
6. The system of claim 2 , further comprising a linear actuator connected with the substrate support for linear translation of the surface of the substrate support.
7. The system of claim 2 , wherein the process chamber is a hot wall chamber for elevated temperature processes.
8. The system of claim 2 , wherein the process chamber, the substrate support, and the at least one Coanda effect gas injector comprise materials selected from the group consisting of aluminum oxide, aluminum nitride, silicon carbide, silicon nitride, silicon dioxide, stainless steel, graphite, and silicon carbide coated graphite.
9. The system of claim 2 , wherein the cross-section thickness of the sinusoidal heating element is a function of the form f(1/r) where r is the radial position.
10. The system of claim 2 , wherein the cross-section width of the sinusoidal heating element is a function of the form f(r) where r is the radial position.
11. The system of claim 2 , wherein the cross-section thickness of the sinusoidal heating element is:
t= 2π r i 2 Gt i /(2π r 2 G−Sr )
where
t is the cross-section thickness of the sinusoidal heating element,
r is the radial position,
π is the mathematical constant pi,
r i is the inner radius of the sinusoidal heating element,
t i is an initial trial thickness,
G is a geometry factor equaling an angular width of the sinusoidal heating element between the peaks and troughs divided by an angular size of the at least one electrical resistance heater, and
S is the constant spacing between facing side surfaces of the heating sinusoidal heating element.
12. The system of claim 2 , wherein the cross-section width of the sinusoidal heating element is:
w= 2π Gr−S
where
w is the cross-section width of the sinusoidal heating element,
r is the radial position,
π is the mathematical constant pi,
G is a geometry factor equaling an angular width of the sinusoidal heating element between the peaks and troughs divided by an angular size of the at least one electrical resistance heater, and
S is the constant spacing between facing side surfaces of the sinusoidal heating element.
13. The system of claim 2 , wherein the at least one electrical resistance heater comprises graphite coated with silicon carbide.
14. The system of claim 2 , wherein the sinusoidal heating element comprises a material selected from the group consisting of nickel-chromium alloy, molybdenum, tantalum, and tungsten.
15. The system of claim 2 , wherein the at least one electrical resistance heater further comprises electrical contacts and electrical adapters press-fit coupled thereto.
16. The system of claim 2 , further comprising a secondary gas injector disposed so as to provide a gas flow to the process chamber.
17. A system for processing one or more substrates, the system comprising:
an outer chamber;
a process chamber disposed within the outer chamber;
a substrate support disposed in the process chamber to hold one or more substrates;
at least one electrical resistance heater comprising a sinusoidal heating element having a plurality of peaks disposed to delineate an outer radius and a plurality of troughs disposed to delineate an inner radius; a cross-section width of the sinusoidal heating element being a first function of a radial position and a cross-section thickness of the sinusoidal heating element being a second function of the radial position so that the sinusoidal heating element provides a constant heat flux at the radial position and forms a constant spacing between facing side surfaces of the sinusoidal heating element wherein the radial position is a value that ranges from the inner radius to the outer radius, the at least one electrical resistance heater comprising pyrolytic graphite electrical contacts and pyrolytic graphite electrical adapters press-fit coupled thereto and a thermally deposited silicon carbide overcoating, the at least one electrical resistance heater being disposed between the outer chamber and the process chamber so as to heat the substrate support;
at least one Coanda effect gas injector disposed proximate a peripheral edge of the substrate support so as to provide a Coanda effect gas flow over the surface of the substrate support, the at least one Coanda effect gas injector having a gas entry port, a plenum, a gas flow channel, and a gas exit port; the gas exit port being in fluid communication with the plenum via the gas flow channel, the gas entry port being in fluid communication with the plenum, the gas flow channel being formed by at least one convex surface of the Coanda effect gas injector so as to produce a Coanda effect gas flow;
at least one secondary gas injector disposed so as to provide a gas flow to the process chamber; and
a rotary coupling connected with the substrate support for rotating the substrate support;
wherein the cross-section thickness of the sinusoidal heating element is:
t= 2π r i 2 Gt i /(2π r 2 G−Sr )
where
t is the cross-section thickness of the sinusoidal heating element,
r is the radial position,
π is the mathematical constant pi,
r i is the inner radius of the sinusoidal heating element,
t i is an initial trial thickness,
G is a geometry factor equaling an angular width of the sinusoidal heating element between the peaks and troughs divided by an angular size of the at least one electrical resistance heater, and
S is the constant spacing between facing side surfaces of the sinusoidal heating element;
wherein the cross-section width of the sinusoidal heating element is:
w= 2π Gr−S
where
w is the cross-section width of the sinusoidal heating element,
r is the radial position,
π is the mathematical constant pi,
G is a geometry factor equaling an angular width of the sinusoidal heating element between the peaks and troughs divided by an angular size of the at least one electrical resistance heater, and
S is the constant spacing between facing side surfaces of the sinusoidal heating element.
18. A system for processing one or more substrates, the system comprising:
a process chamber;
a substrate support disposed in the process chamber to hold one or more substrates;
at least one electrical resistance heater comprising a sinusoidal heating element having a plurality of peaks disposed to delineate an outer radius and a plurality of troughs disposed to delineate an inner radius forming a plurality of spokes extending from the inner radius to the outer radius; a cross-section width of the sinusoidal heating element being a first function of a radial position and a cross-section thickness of the sinusoidal heating element being a second function of the radial position so that the sinusoidal heating element provides a constant heat flux at the radial position and forms a constant spacing between facing side surfaces of the sinusoidal heating element wherein the radial position is a value that ranges from the inner radius to the outer radius, the at least one electrical resistance heater being disposed so as to heat the substrate support;
wherein the cross-section thickness of the sinusoidal heating element is:
t= 2π r i 2 Gt i /(2π r 2 G−Sr )
where
t is the cross-section thickness of the sinusoidal heating element,
r is the radial position,
π is the mathematical constant pi,
r i is the inner radius of the sinusoidal heating element,
t i is an initial trial thickness,
G is a geometry factor equaling an angular width of the sinusoidal heating element between the peaks and troughs divided by an angular size of the at least one electrical resistance heater, and
S is the spacing between facing side surfaces of the sinusoidal heating element;
wherein the cross-section width of the sinusoidal heating element is:
w= 2π Gr−S
where
w is the cross-section width of the sinusoidal heating element,
r is the radial position,
π is the mathematical constant pi,
G is a geometry factor equaling an angular width of the sinusoidal heating element between the peaks and troughs divided by an angular size of the at least one electrical resistance heater, and
S is the spacing between facing side surfaces of the sinusoidal heating element.
19. The system of claim 18 , further comprising at least one Coanda effect gas injector disposed proximate a peripheral edge of the substrate support so as to provide a Coanda effect gas flow over the surface of the substrate support.
20. The system of claim 18 , wherein the at least one electrical resistance heater comprises pyrolytic graphite electrical contacts and pyrolytic graphite electrical adapters press-fit coupled thereto and a thermally deposited silicon carbide overcoating.
21. The system of claim 18 , further comprising:
at least one Coanda effect gas injector disposed proximate a peripheral edge of the substrate support so as to provide a Coanda effect gas flow over the surface of the substrate support;
at least one secondary gas injector disposed so as to provide a gas flow to the process chamber; and
a rotary coupling connected with the substrate support for rotating the substrate support.
22. The system of claim 18 , further comprising an outer chamber containing the process chamber.