High-power acoustic device with improved performance
The present disclosure relates to a high-power acoustic device with improved performance. The disclosed acoustic device includes a substrate, a die-attach material, and an acoustic die. The substrate includes a substrate body and a die pad on a top surface of the substrate body. The die-attach material is a sintered material and applied over the die pad. The acoustic die is coupled to the die pad via the die-attach material. Herein, the acoustic die includes a die body and a metallization structure, which is sandwiched between the die body and the die-attach material.
1. An apparatus comprising:
a substrate comprising a substrate body and a die pad on a top surface of the substrate body;
a die-attach material applied over the die pad, wherein the die-attach material is a sintered material;
an acoustic die coupled to the die pad via the die-attach material, wherein:
the acoustic die includes a plurality of acoustic components, a die body and a metallization structure;
the plurality of acoustic components resides over a top surface of the die body and the metallization structure resides over a bottom surface of the die body; and
the metallization structure is vertically sandwiched between the die body and the die-attach material.
2. The apparatus of claim 1 wherein the metallization structure provides adhesion to the die body, chemical bonding to the die-attach material, and a wetting function that provides an interface between the die body and die-attach material.
3. The apparatus of claim 2 wherein the metallization structure comprises:
a first layer that is in contact with the die body and provides the adhesion to the die body;
a second layer that is in contact with the die-attach material and provides the chemical bonding to the die-attach material; and
a third layer that is sandwiched between the first layer and the second layer and provides the wetting function.
4. The apparatus of claim 3 wherein:
the first layer is formed of Titanium (Ti), Titanium Tungsten (TiW), or Chromium (Cr);
the second layer is formed of gold (Au) or silver (Ag); and
the third layer is formed of TiW, Au, Nickel-Vanadium (NiV), or Nickel (Ni).
5. The apparatus of claim 2 wherein the metallization structure comprises:
a first layer that is in contact with the die body and provides the adhesion to the die body and the wetting function; and
a second layer that is sandwiched between the first layer and the die-attach material and provides the chemical bonding to the die-attach material.
6. The apparatus of claim 2 wherein the metallization structure comprises:
a first layer that is in contact with the die body and provides the adhesion to the die body; and
a second layer sandwiched between the first layer and the die-attach material, wherein the second layer provides the chemical bonding to the die-attach material and the wetting function.
7. The apparatus of claim 2 wherein the metallization structure comprises:
a first layer that is in contact with the die body and provides the adhesion to the die body and the wetting function; and
a second layer sandwiched between the first layer and the die-attach material, wherein the second layer provides the chemical bonding to the die-attach material and the wetting function.
8. The apparatus of claim 2 wherein the metallization structure is formed of at least one of a group consisting of TiW, Ti, Cr, Ni, NiV, Ag, and Au.
9. The apparatus of claim 1 wherein the acoustic die further includes an enclosure coupled to the top surface of the die body to encapsulate the plurality of acoustic components, wherein the enclosure includes a cap and an outer wall extending from the cap to the top surface of the die body.
10. The apparatus of claim 9 wherein:
the substrate further comprises a plurality of wire-contacts on the top surface of the substrate body and surrounding the die pad; and
the acoustic die further comprises a plurality of wires, wherein each of the plurality of wires is outside the enclosure and extends from the top surface of the die body to a corresponding wire-contact on the top surface of the substrate body.
11. The apparatus of claim 1 wherein the substrate body is formed of one of a group consisting of FR-4, BT-NS, PTFE, Rogers RO4003, RO6035, and LCP.
12. The apparatus of claim 1 wherein the substrate body is formed of one of a group consisting of alumina, low temperature co-fired ceramic (LTCC), or high temperature co-fired ceramic (HTCC).
13. The apparatus of claim 1 wherein the substrate is a printed circuit board (PCB).
14. The apparatus of claim 1 wherein the die-attach material is one of a group consisting of sintered silver, sintered copper, and sintered gold.
15. The apparatus of claim 1 wherein the acoustic die is a bulk acoustic wave (BAW) die.
16. The apparatus of claim 1 wherein the acoustic die is a surface acoustic wave (SAW) die.
17. The apparatus of claim 1 wherein the substrate further comprises a heat spreader embedded in the substrate body, wherein the heat spreader is thermally coupled to the die pad and extends from the top surface of the substrate body to a bottom surface of the substrate body.
18. The apparatus of claim 1 wherein the substrate further includes a plurality of thermal vias, wherein each of the plurality of thermal vias is thermally coupled to the die pad and extends from the top surface of the substrate body to a bottom surface of the substrate body.
19. The apparatus of claim 1 further comprising a molding compound formed over the substrate to encapsulate the acoustic die.