Semiconductor device with protective element portion
In a circuit portion, a p + -type diffusion region penetrates, in the depth direction, an n − -type base region on the front side of a base substrate and surrounds a MOSFET. In a protective element portion on the same substrate, a p ++ -type contact region, an n + -type diffusion region, and a p + -type diffusion region are selectively provided in a p + -type diffusion region on the front side of the base substrate. The p + -type diffusion region penetrates the p − -type diffusion region in the depth direction, on the outer periphery of the p − -type diffusion region. An n + -type source region, the p + -type diffusion region, the p ++ -type contact region, and the n + -type diffusion region are connected to a GND terminal. The rear surface of the substrate is connected to a VCC terminal. A snapback start voltage of a parasitic bipolar element of the protective element portion is lower than that of the circuit portion.
1. A semiconductor device comprising:
a first semiconductor region of a second conductivity type selectively provided in a surface layer of a first principal surface of a semiconductor substrate of a first conductivity type;
an element structure of a semiconductor element provided in the first semiconductor region;
a second semiconductor region of the first conductivity type selectively provided in the first semiconductor region, the second semiconductor region constituting the element structure of the semiconductor element;
a third semiconductor region of the second conductivity type selectively provided to penetrate the first semiconductor region in a depth direction and to surround the element structure of the semiconductor element at a depth equal to or deeper than a depth of the first semiconductor region, the third semiconductor region having an impurity concentration that is higher than that of the first semiconductor region;
a fourth semiconductor region of the second conductivity type selectively provided in the surface layer of the first principal surface of the semiconductor substrate to be spaced apart from the first semiconductor region;
a fifth semiconductor region of the first conductivity type selectively provided in the fourth semiconductor region;
a sixth semiconductor region of the second conductivity type selectively provided to penetrate the fourth semiconductor region in the depth direction and to be at a depth equal to or deeper than a depth of the fourth semiconductor region, the sixth semiconductor region having an impurity concentration that is higher than that of the fourth semiconductor region;
a first electrode that is electrically connected to the second semiconductor region, the third semiconductor region, the fourth semiconductor region, and the fifth semiconductor region; and
a second electrode that is connected to a second principal surface of the semiconductor substrate.
2. The semiconductor device according to claim 1 , further comprising
a seventh semiconductor region of the second conductivity type selectively provided in the fourth semiconductor region, the seventh semiconductor region having an impurity concentration that is higher than that of the fourth semiconductor region, wherein
the first electrode is electrically connected to the fourth semiconductor region through the seventh semiconductor region, and
the fifth semiconductor region is arranged between the sixth semiconductor region and the seventh semiconductor region.
3. The semiconductor device according to claim 1 , further comprising
a seventh semiconductor region of the second conductivity type selectively provided in the fourth semiconductor region, the seventh semiconductor region having an impurity concentration that is higher than that of the fourth semiconductor region, wherein
the first electrode is electrically connected to the fourth semiconductor region through the seventh semiconductor region,
the seventh semiconductor region is arranged to be away from the sixth semiconductor region, and
the fifth semiconductor region is selectively provided in the sixth semiconductor region.
4. The semiconductor device according to claim 1 , further comprising
a seventh semiconductor region of the second conductivity type selectively provided in the sixth semiconductor region, the seventh semiconductor region having an impurity concentration that is higher than that of the sixth semiconductor region, wherein
the first electrode is electrically connected to the fourth semiconductor region through the seventh semiconductor region, and
the fifth semiconductor region is selectively provided in the sixth semiconductor region.
5. The semiconductor device according to claim 1 , further comprising
a seventh semiconductor region of the second conductivity type selectively provided in the sixth semiconductor region, the seventh semiconductor region having an impurity concentration that is higher than that of the sixth semiconductor region, wherein
the first electrode is electrically connected to the fourth semiconductor region through the seventh semiconductor region, and
the fifth semiconductor region is arranged to be away from the sixth semiconductor region.
6. The semiconductor device according to claim 2 , wherein
the fifth semiconductor region is arranged to surround a periphery of the seventh semiconductor region.
7. The semiconductor device according to claim 2 , wherein
the fifth semiconductor region is arranged to surround a periphery of the seventh semiconductor region, and
the sixth semiconductor region is arranged to surround a periphery of the fifth semiconductor region.
8. The semiconductor device according to claim 2 , wherein
the sixth semiconductor region is arranged to surround a periphery of the seventh semiconductor region.
9. The semiconductor device according to claim 2 , wherein
the sixth semiconductor region is arranged to surround a periphery of the fifth semiconductor region.
10. The semiconductor device according to claim 1 , wherein
the sixth semiconductor region has an impurity concentration and a depth equal to those of the third semiconductor region.
11. The semiconductor device according to claim 1 , wherein
the fourth semiconductor region has an impurity concentration and a depth equal to those of the first semiconductor region.
12. The semiconductor device according to claim 1 , wherein
a distance from the sixth semiconductor region to a contact portion of the fourth semiconductor region and the first electrode is configured such that a first voltage at which a first parasitic bipolar element constituted by the fifth semiconductor region, the fourth semiconductor region, and the semiconductor substrate or a second parasitic bipolar element constituted by the fifth semiconductor region, the sixth semiconductor region, and the semiconductor substrate starts to snap back is lower than a second voltage at which a third parasitic bipolar element constituted by the second semiconductor region, the first semiconductor region, and the semiconductor substrate starts to snap back.
13. The semiconductor device according to claim 2 , wherein
a distance from the sixth semiconductor region to the seventh semiconductor region is configured such that a first voltage at which a first parasitic bipolar element constituted by the fifth semiconductor region, the fourth semiconductor region, and the semiconductor substrate or a second parasitic bipolar element constituted by the fifth semiconductor region, the sixth semiconductor region, and the semiconductor substrate starts to snap back is lower than a second voltage at which a third parasitic bipolar element constituted by the second semiconductor region, the first semiconductor region, and the semiconductor substrate starts to snap back.
14. The semiconductor device according to claim 2 , wherein
a distance from the sixth semiconductor region to the fifth semiconductor region is configured such that a first voltage at which a first parasitic bipolar element constituted by the fifth semiconductor region, the fourth semiconductor region, and the semiconductor substrate starts to snap back is lower than a second voltage at which a second parasitic bipolar element constituted by the second semiconductor region, the first semiconductor region, and the semiconductor substrate starts to snap back.
15. The semiconductor device according to claim 1 , wherein
the fourth semiconductor region is configured to have an impurity concentration such that a first voltage at which a first parasitic bipolar element constituted by the fifth semiconductor region, the fourth semiconductor region, and the semiconductor substrate or a second parasitic bipolar element constituted by the fifth semiconductor region, the sixth semiconductor region, and the semiconductor substrate starts to snap back is lower than a second voltage at which a third parasitic bipolar element constituted by the second semiconductor region, the first semiconductor region, and the semiconductor substrate starts to snap back.
16. The semiconductor device according to claim 1 , wherein
the element structure of the semiconductor element includes:
the second semiconductor region;
an eighth semiconductor region of the first conductivity type selectively provided in the first semiconductor region and away from the second semiconductor region; and
a gate electrode that is provided through a gate insulating film on a surface of the first semiconductor region at a portion between the second semiconductor region and the eighth semiconductor region.
17. The semiconductor device according to claim 1 , wherein
the semiconductor device is provided with the first semiconductor region and the fourth semiconductor region formed at a same process step.
18. The semiconductor device according to claim 1 , wherein
the semiconductor device is provided with the third semiconductor region and the sixth semiconductor region formed at a same process step.
19. The semiconductor device according to claim 1 , wherein
the semiconductor device is provided with the second semiconductor region and the fifth semiconductor region formed at a same process step.
20. The semiconductor device according to claim 1 , further comprising:
a tenth semiconductor region of the second conductivity type selectively provided in the surface layer of the first principal surface of the semiconductor substrate to be away from the first semiconductor region and the fourth semiconductor region;
an eleventh semiconductor region of the second conductivity type selectively provided to penetrate the tenth semiconductor region in the depth direction and to be at a depth equal to or deeper than a depth of the tenth semiconductor region; and
a twelfth semiconductor region of the second conductivity type selectively provided in a surface layer of the eleventh semiconductor region, the twelfth semiconductor region having an impurity concentration that is higher than that of the eleventh semiconductor region, wherein
a first avalanche voltage of a first diode constituted by the semiconductor substrate and the third semiconductor region is higher than a second avalanche voltage of a second diode constituted by the semiconductor substrate and the eleventh semiconductor region.
21. The semiconductor device according to claim 20 , wherein
on a surface of the first principal surface of the semiconductor substrate, a first distance between the semiconductor substrate and the sixth semiconductor region is larger than a second distance between the semiconductor substrate and the eleventh semiconductor region.