Semiconductor device
A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.
1. A semiconductor device comprising:
a first transistor comprising a silicon semiconductor layer including a first channel formation region;
an insulating layer comprising a first nitride insulating layer and a second nitride insulating layer over the first transistor;
a second transistor comprising an oxide semiconductor layer including a second channel formation region over the insulating layer; and
a third nitride insulating layer over the second transistor,
wherein the second nitride insulating layer is between the first nitride insulating layer and the oxide semiconductor layer,
wherein a density of the second nitride insulating layer is higher than or equal to 2.75 g/cm 3 , and
wherein a density of the third nitride insulating layer is higher than or equal to 2.75 g/cm 3 .
2. The semiconductor device according to claim 1 ,
wherein a refractive index of the second nitride insulating layer is higher than or equal to 1.95, and
wherein a refractive index of the third nitride insulating layer is higher than or equal to 1.95.
3. The semiconductor device according to claim 1 , wherein a hydrogen concentration of the first nitride insulating layer is higher than or equal to 20 atomic % and lower than or equal to 25 atomic %.
4. The semiconductor device according to claim 1 , wherein a hydrogen concentration of the second nitride insulating layer is higher than or equal to 10 atomic % and lower than or equal to 15 atomic %.
5. The semiconductor device according to claim 1 , wherein the second nitride insulating layer is in direct contact with the first nitride insulating layer.
6. The semiconductor device according to claim 1 , wherein the first transistor and the second transistor each have a top-gate structure.
7. The semiconductor device according to claim 1 , wherein the insulating layer further comprises an oxide insulating layer between and in contact with the first nitride insulating layer and the second nitride insulating layer.
8. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
9. The semiconductor device according to claim 1 , wherein a hydrogen concentration of the third nitride insulating layer is higher than or equal to 10 atomic % and lower than or equal to 15 atomic %.
10. The semiconductor device according to claim 1 , wherein an etching rate of the third nitride insulating layer is less than or equal to 2.0 nm/minute under a condition where etching is performed at a temperature higher than or equal to 20° C. and lower than or equal to 25° C. with the use of 0.5 wt % of hydrofluoric acid.
11. A semiconductor device comprising:
a first transistor comprising a silicon semiconductor layer including a first channel formation region;
an insulating layer over the first transistor, the insulating layer comprising a first nitride insulating layer, and a second nitride insulating layer over the first nitride insulating layer;
a second transistor over the insulating layer, the second transistor comprising a first electrode, a second electrode, and an oxide semiconductor layer including a second channel formation region; and
a third nitride insulating layer over the second transistor,
wherein each of the first electrode and the second electrode overlaps with the second channel formation region,
wherein the first electrode is in contact with the second nitride insulating layer,
wherein a density of the second nitride insulating layer is higher than or equal to 2.75 g/cm 3 , and
wherein a density of the third nitride insulating layer is higher than or equal to 2.75 g/cm 3 .
12. The semiconductor device according to claim 11 ,
wherein a refractive index of the second nitride insulating layer is higher than or equal to 1.95, and
wherein a refractive index of the third nitride insulating layer is higher than or equal to 1.95.
13. The semiconductor device according to claim 11 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
14. The semiconductor device according to claim 11 , wherein a hydrogen concentration of the second nitride insulating layer is higher than or equal to 10 atomic % and lower than or equal to 15 atomic %.
15. The semiconductor device according to claim 11 , wherein an etching rate of the third nitride insulating layer is less than or equal to 2.0 nm/minute under a condition where etching is performed at a temperature higher than or equal to 20° C. and lower than or equal to 25° C. with the use of 0.5 wt % of hydrofluoric acid.
16. A semiconductor device comprising:
a first transistor comprising a silicon semiconductor layer including a first channel formation region;
an insulating layer over the first transistor, the insulating layer comprising a first nitride insulating layer, and a second nitride insulating layer over and in contact with the first nitride insulating layer;
a second transistor over the insulating layer, the second transistor comprising a first electrode, a second electrode, and an oxide semiconductor layer including a second channel formation region; and
a third nitride insulating layer over the second transistor,
wherein each of the first electrode and the second electrode overlaps with the second channel formation region,
wherein the first electrode is in contact with the first nitride insulating layer,
wherein a density of the second nitride insulating layer is higher than or equal to 2.75 g/cm 3 , and
wherein a density of the third nitride insulating layer is higher than or equal to 2.75 g/cm 3 .
17. The semiconductor device according to claim 16 ,
wherein a refractive index of the second nitride insulating layer is higher than or equal to 1.95, and
wherein a refractive index of the third nitride insulating layer is higher than or equal to 1.95.
18. The semiconductor device according to claim 16 , wherein a hydrogen concentration of the second nitride insulating layer is higher than or equal to 10 atomic % and lower than or equal to 15 atomic %.
19. The semiconductor device according to claim 16 , wherein an etching rate of the third nitride insulating layer is less than or equal to 2.0 nm/minute under a condition where etching is performed at a temperature higher than or equal to 20° C. and lower than or equal to 25° C. with the use of 0.5 wt % of hydrofluoric acid.