Semiconductor switching device separated by device isolation
A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.
1. An apparatus comprising:
a device isolation structure disposed within a substrate;
a photo-sensitive device isolated by the device isolation structure;
a first gate structure disposed over the substrate and having a first portion disposed over the device isolation structure; and
a second gate structure disposed over the substrate and over the device isolation structure;
a first source/drain feature disposed within the substrate and at least partially enclosed by the device isolation structure and the first gate structure, and
wherein a thickness of the first portion of the first gate structure is such that electric current flowing through the first source/drain feature is prevented from flowing into the photo-sensitive device.
2. The apparatus of claim 1 , wherein the second gate structure is biased.
3. The apparatus of claim 1 , wherein the entire second gate structure is disposed over the device isolation structure.
4. The apparatus of claim 1 , further comprising:
a third gate structure disposed over the substrate and having a second portion disposed over the device isolation structure; and
a second source/drain feature disposed within the substrate and at least partially enclosed by the device isolation structure and the second gate structure, and
wherein a thickness of the second portion of the second gate structure is such that electric current flowing through the second source/drain feature is prevented from flowing into the photo-sensitive device.
5. The apparatus of claim 1 , wherein the first gate structure further includes a second portion disposed over the device isolation structure,
wherein the first portion of the first gate structure opposes the second portion of the first gate structure, and
wherein the first source/drain feature is disposed in the substrate between the first and second portions of the first gate structure.
6. The apparatus of claim 1 , wherein the device isolation structure includes a doped feature disposed within the substrate.
7. The apparatus of claim 1 , wherein the device isolation structure includes a dielectric structure disposed within the substrate.
8. An apparatus comprising:
an isolation feature disposed in a substrate;
a photo-sensitive device disposed in the substrate adjacent the isolation feature;
a first gate structure disposed over the substrate, wherein the first gate structure includes:
a body portion disposed over the substrate;
a first extension portion extending from the body portion to over the isolation feature; and
a second extension portion extending from the body portion to over the isolation feature;
a first source/drain feature disposed in a first region of the substrate, wherein a first portion of the isolation feature extends within the substrate from the first extension portion to the second extension portion such that the first region of the substrate is bounded by the first extension portion, the second extension portion, the body portion of the first gate structure and the first portion of the isolation feature; and
a second gate structure at least partially disposed over the isolation feature.
9. The apparatus of claim 8 , wherein the first gate structure is part of a transistor selected from the group consisting of a reset transistor, a transfer transistor, a source follower transistor, and a row select transistor.
10. The apparatus of claim 8 , further comprising:
a second source/drain feature disposed in a second region of the substrate,
wherein the first gate structure further includes a third extension portion extending from the body portion to over the isolation feature and a fourth extension portion extending from the body portion to over the isolation feature, and
wherein a second portion of the isolation feature extends within the substrate from the third extension portion to the fourth extension portion such that the second region of the substrate is bounded by the third extension portion, the fourth extension portion and the body portion of the first gate structure and the second portion of the isolation feature.
11. The apparatus of claim 8 , wherein the isolation feature includes a doped feature disposed within the substrate.
12. The apparatus of claim 8 , wherein the entire second gate structure is disposed over the isolation feature and the second gate structure is biased.
13. The apparatus of claim 8 , further comprising:
a second source/drain feature disposed in a second region of the substrate, and
wherein the second gate structure includes a third extension portion extending over the isolation feature and a fourth extension portion extending over the isolation feature, and
wherein a second portion of the isolation feature extends within the substrate from the third extension portion to the fourth extension portion such that the second region of the substrate is bounded by the third extension portion, the fourth extension portion, and the second portion of the isolation feature.
14. The apparatus of claim 8 , wherein the first gate structure further includes a sidewall spacer disposed on the first and second extension portions, and
wherein a first portion of the sidewall spacer disposed on the first extension portion interfaces with a second portion of the sidewall spacer disposed on the second extension portion.
15. The apparatus of claim 8 , wherein the photo-sensitive device includes a photodiode region.
16. A device comprising:
an isolation feature disposed in a substrate;
a photo-sensitive device disposed in the substrate adjacent the isolation feature;
a first gate structure disposed over the substrate, wherein the first gate structure includes:
a body portion disposed over the substrate;
a first portion extending away from the body portion in a first direction, the first portion disposed over the isolation feature; and
a second portion extending away from the body portion in the first direction, the second portion disposed over the isolation feature;
a third portion extending away from the body portion in a second direction that is opposite the first direction, the third portion disposed over the isolation feature; and
a first source/drain feature disposed in a first region of the substrate, wherein a first portion of the isolation feature extends within the substrate from the first portion to the second portion such that the first region of the substrate is bounded by the first and second portions of the first gate structure and the first portion of the isolation feature; and
a second gate structure at least partially disposed over the isolation feature.
17. The device of claim 16 , wherein the first gate structure is part of a transistor selected from the group consisting of a reset transistor, a transfer transistor, a source follower transistor, and a row select transistor; and
wherein the second gate structure is a biased dummy gate structure.
18. The device of claim 16 , wherein the first gate structure further include a fourth portion extending away from the body portion in the second direction, the fourth portion disposed over the isolation feature, and
wherein a second portion of the isolation feature extends within the substrate from the third portion to the fourth portion such that a second region of the substrate is bounded by the third and fourth portions of the first gate structure and the second portion of the isolation feature.
19. The device of claim 18 , wherein the second gate structure is disposed over the second portion of the of the isolation feature.
20. The device of claim 16 , further comprising:
a second source/drain feature disposed in a second region of the substrate, and
a third gate structure disposed over the substrate, the third gate structure including a fourth portion extending over the isolation feature and a fifth portion extending over the isolation feature, and
wherein a second portion of the isolation feature extends within the substrate from the fourth portion to the fifth portion such that the second region of the substrate is bounded by the fourth portion, the fifth portion, and the second portion of the isolation feature.