Organic photoelectronic device and image sensor
Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.
1. An organic photoelectronic device, comprising:
a first electrode and a second electrode facing each other;
a light-absorption layer between the first electrode and the second electrode, the light-absorption layer including a first p-type light-absorption material and a first n-type light-absorption material, the first p-type light-absorption material and the first n-type light-absorption material forming a heterojunction, and
a light-absorption auxiliary layer on one side of the light-absorption layer, the light-absorption auxiliary layer including a second p-type light-absorption material or a second n-type light-absorption material, the light-absorption auxiliary layer having a smaller full width at half maximum (FWHM) than the light-absorption layer.
2. The organic photoelectronic device of claim 1 , wherein the second p-type light-absorption material or the second n-type light-absorption material has a smaller FWHM than a FWHM of the light-absorption layer by about 5 nm or more.
3. The organic photoelectronic device of claim 1 , wherein the second p-type light-absorption material is the same as or different from the first p-type light-absorption material, and
the second n-type light-absorption material is the same as or different from the first n-type light-absorption material.
4. The organic photoelectronic device of claim 1 , wherein the light-absorption auxiliary layer has an extinction coefficient that is greater than or equal to about 100,000 cm −1 at a maximum absorption wavelength (λ max ).
5. The organic photoelectronic device of claim 1 , wherein an external quantum efficiency (EQE) of the second p-type light-absorption material or the second n-type light-absorption material at a maximum absorption wavelength (λ max ) is equal to or greater than an external quantum efficiency (EQE) of the light-absorption layer at the maximum absorption wavelength (λ max ).
6. The organic photoelectronic device of claim 1 , wherein the second p-type light-absorption material or the second n-type light-absorption material is represented by the following Chemical Formula 1, and
the first p-type light-absorption material or the first n-type light-absorption material is represented by the following Chemical Formula 2:
wherein
R a to R 1 are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen atom, a halogen-containing group, or a combination thereof,
X is a halogen atom, a halogen-containing group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 aryloxy group, a substituted or unsubstituted C1 to C30 heteroaryloxy group, a substituted or unsubstituted silyloxy group, a substituted or unsubstituted amine group, a substituted or unsubstituted arylamine group, or a combination thereof,
wherein
R m to R x are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen atom, a halogen-containing group, or a combination thereof, and
Y is a halogen atom.
7. An organic photoelectronic device, comprising:
a light-receiving electrode and an opposing electrode,
a light-absorption layer between the light-receiving electrode and the opposing electrode, and
a light-absorption auxiliary layer between the light-receiving electrode and the opposing electrode,
wherein the light-absorption auxiliary layer includes a light-absorption material configured to absorb light in a visible wavelength region.
8. The organic photoelectronic device of claim 7 , wherein the light-absorption layer and the light-absorption auxiliary layer are configured to absorb light in a green wavelength region.
9. The organic photoelectronic device of claim 8 , wherein a FWHM of the light-absorption auxiliary layer is narrower than a FWHM of the light-absorption layer.
10. The organic photoelectronic device of claim 7 , wherein the light-absorption material of the light-absorption auxiliary layer is represented by the following Chemical Formula 1:
wherein
R a to R 1 are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen atom, a halogen-containing group, or a combination thereof, and
X is a halogen atom, a halogen-containing group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 aryloxy group, a substituted or unsubstituted C1 to C30 heteroaryloxy group, a substituted or unsubstituted silyloxy group, a substituted or unsubstituted amine group, a substituted or unsubstituted arylamine group, or a combination thereof.
11. The organic photoelectronic device of claim 7 , further comprising a charge auxiliary layer between the light receiving electrode and the opposing electrode.
12. An organic photoelectronic device, comprising:
a first electrode and a second electrode facing each other;
a light-absorption layer between the first electrode and the second electrode, the light-absorption layer including a first p-type light-absorption material and a first n-type light-absorption material, the first p-type light-absorption material and the first n-type light-absorption material forming a heterojunction, and
a light-absorption auxiliary layer on one side of the light-absorption layer,
wherein a FWHM of the light-absorption auxiliary layer is narrower than a FWHM of the light-absorption layer.
13. The organic photoelectronic device of claim 12 , wherein the light-absorption auxiliary layer has a FWHM that is less than or equal to about 90 nm.
14. The organic photoelectronic device of claim 12 , further comprising a charge auxiliary layer on one side of the light-absorption auxiliary layer.
15. An image sensor comprising the organic photoelectronic device of claim 1 .
16. An electronic device including the image sensor of claim 15 .
17. An image sensor comprising the organic photoelectronic device of claim 7 .
18. An electronic device including the image sensor of claim 17 .
19. An image sensor comprising the organic photoelectronic device of claim 12 .
20. An electronic device including the image sensor of claim 19 .