Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle and elevator
A semiconductor device according to an embodiment includes an n-type SiC region, an electrode in contact with the SiC region, and a region including oxygen, the region provided in the SiC region, the region being provided on an electrode side of the SiC region.
1. A semiconductor device, comprising:
an n-type SiC region;
an electrode in contact with the n-type SiC region; and
a region including oxygen, the region provided in the n-type SiC region, the region being provided adjacent to the electrode, the region being SiC.
2. The device according to claim 1 ,
wherein an oxygen concentration of the region is equal to or greater than 1×10 16 cm −3 and equal to or less than 1×10 21 cm −3 .
3. The device according to claim 1 ,
wherein the electrode includes metal.
4. The device according to claim 3 ,
wherein the metal is nickel (Ni), titanium (Ti), or molybdenum (Mo).
5. The device according to claim 1 ,
wherein a distance between the electrode and a position of a vertex of a peak of a concentration distribution of oxygen in the region is equal to or less than 10 nm.
6. The device according to claim 1 ,
wherein a full width at half maximum of a peak of a concentration distribution of oxygen in the region is equal to or less than 10 nm.
7. The device according to claim 1 ,
wherein a Si—O—Si bond is present in the region.
8. The device according to claim 1 ,
wherein the region includes a pair of oxygen positioned in a carbon site of SiC lattice.
9. The device according to claim 1 ,
wherein an n-type impurity concentration of the n-type SiC region is equal to or greater than 1×10 15 cm −3 and equal to or less than 1×10 18 cm −3 .
10. An inverter circuit comprising:
the semiconductor device according to claim 1 .
11. A driving device comprising:
the semiconductor device according to claim 1 .
12. A vehicle comprising:
the semiconductor device according to claim 1 .
13. An elevator comprising:
the semiconductor device according to claim 1 .