Thin film stack
The present disclosure is drawn to a thin film stack including a substrate, a metal layer, and an adhesive layer. The adhesive layer comprises a blend of zinc oxide and tin oxide, and the adhesive layer is adhered between the substrate and the metal layer.
1. A thin film stack, comprising a substrate, a metal layer, and an adhesive layer, wherein the adhesive layer comprises a blend of zinc oxide and tin oxide, wherein the adhesive layer is adhered to the substrate and the metal layer, and wherein the blend of zinc oxide and tin oxide comprises from 90 at % to 100 at % of the adhesive layer, and is present at a zinc oxide to tin oxide atomic ratio of 1:20 to 20:1.
2. The thin film stack of claim 1 , wherein the thin film stack further comprises a piezoelectric layer.
3. The thin film stack of claim 2 , wherein the piezoelectric layer is PZT.
4. The thin film stack of claim 2 , wherein the thin film stack is an actuator for fluid ejection device.
5. The thin film stack of claim 1 , wherein the substrate comprise a membrane from 10 Å to 10 μm in thickness, and the membrane is selected from nitrides, carbides, oxides, or metals.
6. The thin film stack of claim 1 , wherein the metal layer is a metal electrode from 5 nm to 5 microns in thickness, and is selected from platinum, silver, iridium, palladium, or alloys thereof.
7. The thin film stack of claim 1 , wherein the adhesive layer is from 10 Å to 0.5 μm in thickness.
8. The thin film stack of claim 1 , wherein the adhesive layer, in addition to the blend, comprises from 0.05 at % to less than 3 at % of at least one dopant.
9. The thin film stack of claim 1 , wherein the adhesive layer provides adhesion between the substrate and the metal layer up to at least 1000° C. without delamination.
10. A thin film stack, comprising a substrate, a metal layer, and an adhesive layer, wherein the adhesive layer comprises a blend of zinc oxide and tin oxide, wherein the adhesive layer is adhered to the substrate and the metal layer, and wherein the adhesive layer, in addition to the blend, comprises from 0.05 at % to less than 3 at % of at least one dopant.
11. The thin film stack of claim 10 , wherein the thin film stack further comprises a piezoelectric layer.
12. The thin film stack of claim 11 , wherein the piezoelectric layer is PZT.
13. The thin film stack of claim 11 , wherein the thin film stack is an actuator for fluid ejection device.
14. The thin film stack of claim 10 , wherein the substrate comprise a membrane from 10 Å to 10 μm in thickness, and the membrane is selected from nitrides, carbides, oxides, or metals.
15. The thin film stack of claim 10 , wherein the metal layer is a metal electrode from 5 nm to 5 microns in thickness, and is selected from platinum, silver, iridium, palladium, or alloys thereof.
16. The thin film stack of claim 10 , wherein the adhesive layer is from 10 Å to 0.5 μm in thickness.
17. The thin film stack of claim 10 , wherein the adhesive layer provides adhesion between the substrate and the metal layer up to at least 1000° C. without delamination.
18. A thin film stack, comprising a substrate, a metal layer, and an adhesive layer, wherein the adhesive layer comprises a blend of zinc oxide and tin oxide, and wherein the adhesive layer is adhered between the substrate and the metal layer, and wherein the thin film stack further comprises a piezoelectric layer.
19. The thin film stack of claim 18 , wherein the piezoelectric layer is attached directly to an opposing surface of the metal layer with respect to the adhesive layer, the metal layer is a metal electrode, and the thin film stack further comprises a second metal electrode positioned on the piezoelectric layer such that when the metal electrode and the second metal electrode are used to generate an electrical potential, the piezoelectric layer acts as a piezoelectric actuator.
20. The thin film stack of claim 18 , wherein the piezoelectric layer is PZT.
21. The thin film stack of claim 18 , wherein the thin film stack is an actuator for fluid ejection device.
22. The thin film stack of claim 18 , wherein the substrate comprise a membrane from 10 Å to 10 μm in thickness, and the membrane is selected from nitrides, carbides, oxides, or metals.
23. The thin film stack of claim 18 , wherein the metal layer is a metal electrode from 5 nm to 5 microns in thickness, and is selected from platinum, silver, iridium, palladium, or alloys thereof.
24. The thin film stack of claim 18 , wherein the blend of zinc oxide and tin oxide comprises from 90 at % to 100 at % of the adhesive layer, and is present at a zinc oxide to tin oxide atomic ratio of 1:20 to 20:1.
25. The thin film stack of claim 18 , wherein the adhesive layer is from 10 Å to 0.5 μm in thickness.
26. The thin film stack of claim 18 , wherein the adhesive layer, in addition to the blend, comprises from 0.05 at % to less than 3 at % of at least one dopant.
27. The thin film stack of claim 18 , wherein the adhesive layer provides adhesion between the substrate and the metal layer up to at least 1000° C. without delamination.