IP Library Granted Patent US 10,141,526
Granted Patent B2
US 10,141,526 · App. 15/252,295 · Granted Nov 27, 2018

Peeling method using separating peeling layer and layer to be peeled

Inventors: Tatsuya Sakuishi (Kanagawa, JP); Yutaka Uchida (Kanagawa, JP); Hiroki Adachi (Tochigi, JP); Saki Eguchi (Tochigi, JP); Junpei Yanaka (Tochigi, JP); Kayo Kumakura (Tochigi, JP); Seiji Yasumoto (Tochigi, JP); Kohei Yokoyama (Kanagawa, JP); Akihiro Chida (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/0097B32B7/02B32B7/06B32B7/12B32B15/08B32B15/18B32B15/20B32B17/00B32B17/06B32B27/20B32B27/286B32B27/30B32B27/325B32B27/34B32B27/36B32B27/365B32B37/02B32B37/10B32B37/18B32B38/10H01L51/003B32B37/1292B32B2250/05B32B2255/20B32B2260/021B32B2260/046B32B2264/102B32B2307/202B32B2307/40B32B2307/50B32B2307/536B32B2307/558B32B2310/0843B32B2315/08B32B2457/20H01L51/5253H01L2251/5338Y02E10/549Y02P70/521
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Quick Facts
Patent No.
US 10,141,526
App. No.
15/252,295
Granted
Nov 27, 2018
Kind
B2
Abstract

A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

Claims (23)

1. A peeling method comprising:

a first step of forming a peeling layer over a first substrate,

a second step of forming a layer to be peeled over the peeling layer, wherein the layer to be peeled comprises a first layer comprising a region in contact with the peeling layer,

a third step of disposing a bonding layer so as to overlap with the peeling layer and the layer to be peeled, wherein the bonding layer is a sheet-like adhesive,

a fourth step of curing the bonding layer,

a fifth step of removing a first portion comprised in the first layer, wherein the first portion comprises a region overlapping with the peeling layer and the bonding layer, and

a sixth step of separating the peeling layer and the layer to be peeled,

wherein the bonding layer cured in the fourth step has a portion having hardness higher than Shore D of 70, and

wherein, in the fifth step, the first portion is removed by laser light irradiation.

2. The peeling method according to claim 1 , wherein the layer to be peeled comprises an inorganic insulating film.

3. The peeling method according to claim 1 , wherein, in the third step, the peeling layer and the bonding layer overlap with each other so that an end portion of the bonding layer is positioned on an inner side than an end portion of the peeling layer.

4. The peeling method according to claim 1 , wherein the bonding layer cured in the fourth step has a portion having hardness higher than or equal to Shore D of 80.

5. A peeling method comprising:

a first step of forming a peeling layer over a first substrate,

a second step of forming a layer to be peeled over the peeling layer, wherein the layer to be peeled comprises a first layer comprising a region in contact with the peeling layer,

a third step of disposing a bonding layer so as to overlap with the peeling layer and the layer to be peeled, wherein the bonding layer is a sheet-like adhesive,

a fourth step of curing the bonding layer,

a fifth step of removing a first portion comprised in the first layer, wherein the first portion comprises a region overlapping with the peeling layer and the bonding layer, and

a sixth step of separating the peeling layer and the layer to be peeled, and

wherein the bonding layer cured in the fourth step has a portion having hardness higher than Shore D of 70.

6. The peeling method according to claim 5 , wherein the layer to be peeled comprises an inorganic insulating film.

7. The peeling method according to claim 5 , wherein, in the third step, the peeling layer and the bonding layer overlap with each other so that an end portion of the bonding layer is positioned on an inner side than an end portion of the peeling layer.

8. The peeling method according to claim 5 , wherein the bonding layer cured in the fourth step has a portion having hardness higher than or equal to Shore D of 80.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 25, 2016
From: SAKUISHI, TATSUYA; UCHIDA, YUTAKA; ADACHI, HIROKI; EGUCHI, SAKI; YANAKA, JUNPEI; KUMAKURA, KAYO; YASUMOTO, SEIJI; YOKOYAMA, KOHEI; CHIDA, AKIHIRO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 040117/0792 →
Priority Claims (1)
JP 2014-029756 · Feb 19, 2014 · national
Continuity (2)
Continuation 14621914 · Feb 13, 2015
Related Publication 20170092885A1 · Mar 30, 2017
Cited By (1)
US 12,598,876