IP Library Granted Patent US 10,144,647
Granted Patent B2
US 10,144,647 · App. 14/889,753 · Granted Dec 4, 2018

Ultrathin carbon nanotube film and preparation method and apparatus thereof

Inventors: Weiya Zhou (Beijing, CN); Qiang Zhang (Beijing, CN); Yanchun Wang (Beijing, CN); Sishen Xie (Beijing, CN)
Assignee: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
C01B31/0226C01B32/16C01B32/168D01F9/133C01B2202/02C01B2202/04C01B2202/06C01B2202/22
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Quick Facts
Patent No.
US 10,144,647
App. No.
14/889,753
Granted
Dec 4, 2018
Kind
B2
Abstract

A method for preparing a carbon nanotube (CNT) film is provided, comprising: providing a growth chamber of CNTs, which includes an inlet end, an outlet end, and a first-level growth cavity and a second-level growth cavity, and the first-level growth cavity and the second-level growth cavity are in fluid communication between the inlet end and the outlet end; making precursor materials, which are used for forming CNTs, react in at least the first-level growth cavity of the growth chamber of CNTs to generate CNTs; and making a carrier gas flow into the growth chamber through the inlet end, and pass through the first-level growth cavity and the second-level growth cavity in sequence, wherein, a radial dimension of the first-level growth cavity in a flowing direction of the carrier gas is smaller than that of the second-level growth cavity at a junction between the first-level growth cavity and the second-level growth cavity, and a bubble blowing process is conducted with the precursor materials under the drive of the carrier gas at a position of an opening of the first-level growth cavity within the second-level growth cavity to generate a closed cylindrical CNT film partially disposed in the first-level growth cavity. The method of the present invention can prepare continuous, ultrathin and self-supported transparent conductive CNT film continuously and directly.

Claims (10)

1. A method for preparing a carbon nanotube (CNT) film, comprising:

providing a growth chamber of CNTs, wherein the growth chamber includes an inlet end, an outlet end, a first-level growth cavity and a second-level growth cavity, wherein the first-level growth cavity and the second-level growth cavity are in fluid communication between the inlet end and the outlet end;

reacting carbon sources and catalyzers in at least the first-level growth cavity of the growth chamber of CNTs to generate the CNTs;

flowing a carrier gas into the growth chamber through the inlet end, the first-level growth cavity and the second-level growth cavity in sequence, wherein a radial dimension of the first-level growth cavity in a flowing direction of the carrier gas is smaller than that of the second-level growth cavity at a junction between the first-level growth cavity and the second-level growth cavity, wherein a bubble blowing process is conducted with the CNTs under a drive of the carrier gas to generate a closed cylindrical CNT film at a position of an opening of the first-level growth cavity within the second-level growth cavity, wherein the closed cylindrical CNT film is connected to the first-level growth cavity; and

collecting the CNT film continuously at the outlet end of the growth chamber.

2. A method as in claim 1 , wherein the first-level growth cavity includes multiple growth cavities, wherein multiple openings of the multiple growth cavities are being placed within the same second-level growth cavity.

3. A method as in claim 1 , wherein the growth chamber further comprises third-level to Nth-level growth cavities, wherein N>3, and wherein average radial dimensions of the growth cavities in the flowing direction of the carrier gas increase successively from the first-level growth cavity to the Nth-level growth cavity.

4. A method as in claim 3 , wherein the first-level growth cavity to the Nth-level growth cavity are all tubular with different diameters, and the first-level to the Nth-level growth cavities are in fluid communication with each other for forming a step-tubular growth chamber.

5. A method as in claim 3 , wherein at least one of the first-level to the Nth-level growth cavities comprises a tapered tube.

6. A method as in claim 1 , wherein the first-level growth cavity and the second-level growth cavity comprise tubes with different radial dimensions, and one end of the first-level growth cavity extends into the second-level growth cavity in the flowing direction of the carrier gas, and the carrier gas passes through the first-level growth cavity and at least part of the second-level growth cavity while flowing through the growth chamber.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 16, 2016
From: ZHOU, WEIYA; ZHANG, QIANG; WANG, YANCHUN; XIE, SISHEN
To: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
Reel/Frame 038937/0442 →
Priority Claims (1)
CN 2013 1 0164499 · May 7, 2013 · national
Continuity (2)
Related Publication 20160115030A1 · Apr 28, 2016
Related Publication 20160347616A2 · Dec 1, 2016
Cited By (1)
US 12,652,947