IP Library Granted Patent US 10,147,720
Granted Patent B2
US 10,147,720 · App. 15/689,823 · Granted Dec 4, 2018

Semiconductor device, liquid-discharge head substrate, liquid-discharge head, and liquid-discharge device

Inventors: Kazunari Fujii (Tokyo, JP); Toshio Negishi (Yokohama, JP)
Assignee: Canon Kabushiki Kaisha
H01L27/0629B41J2/0458B41J2/04541B41J2/04543B41J2/1433H01L23/528H01L23/5228H01L23/5252H01L27/0207B41J2002/14491B41J2202/13H01L28/20H01L29/7817
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Quick Facts
Patent No.
US 10,147,720
App. No.
15/689,823
Granted
Dec 4, 2018
Kind
B2
Abstract

A semiconductor device includes a transistor connected to a terminal having a first potential, an anti-fuse element connected between the transistor and a terminal having a second potential different from the first potential, and a resistor element connected in parallel with the anti-fuse element. An electric path between the transistor and the anti-fuse element has a length smaller than a length of an electric path between the transistor and the resistor element.

Claims (67)

1. A semiconductor device comprising:

a transistor connected to a terminal having a first potential;

an anti-fuse element connected between the transistor and a terminal having a second potential different from the first potential; and

a resistor element connected in parallel with the anti-fuse element between the transistor and the terminal having the second potential,

wherein an electric path between the transistor and the anti-fuse element has a length smaller than a length of an electric path between the transistor and the resistor element.

2. The semiconductor device according to claim 1 ,

wherein a channel forming region of the transistor is formed in a semiconductor substrate, and

wherein the resistor element includes a semiconductor region formed in the semiconductor substrate.

3. A liquid-discharge head substrate comprising:

a plurality of discharging elements configured to discharge liquid;

a control circuit electrically connected to the plurality of discharging elements; and

the semiconductor device according to claim 1 electrically connected to the control circuit.

4. The liquid-discharge head substrate according to claim 3 , wherein the plurality of discharging elements is arranged in a first direction.

5. The liquid-discharge head substrate according to claim 4 , wherein the resistor element has a shape having a longitudinal direction extending in a second direction crossing the first direction.

6. A liquid-discharge head comprising:

a recording unit including the liquid-discharge head substrate according to claim 3 and a plurality of discharge ports arranged in such a manner as to each correspond to a different one of the plurality of discharging elements of the liquid-discharge head substrate; and

an ink container attached to the recording unit.

7. A liquid-discharge device comprising:

the liquid-discharge head according to claim 6 ;

a carriage to which the liquid-discharge head is mounted; and

a guide used for moving the carriage.

8. A semiconductor device comprising:

a transistor connected to a terminal having a first potential;

an anti-fuse element connected between the transistor and a terminal having a second potential different from the first potential; and

a resistor element connected in parallel with the anti-fuse element between the transistor and the terminal having the second potential,

wherein the transistor, the anti-fuse element, and the resistor element are arranged on a semiconductor substrate,

wherein, in a plan view of a surface of the semiconductor substrate, a distance between the transistor and the anti-fuse element is smaller than a distance between the transistor and the resistor element, and

wherein the transistor, the anti-fuse element, and the resistor element are arranged on the surface of the semiconductor substrate.

9. The semiconductor device according to claim 8 , wherein a wiring for connecting the transistor and the anti-fuse element has a length smaller than a length of a wiring for connecting the transistor and the resistor element.

10. The semiconductor device according to claim 8 ,

wherein a channel forming region of the transistor is formed in the semiconductor substrate, and

wherein the resistor element includes a semiconductor region formed in the semiconductor substrate.

11. A liquid-discharge head substrate comprising:

a plurality of discharging elements configured to discharge liquid;

a control circuit electrically connected to the plurality of discharging elements; and

the semiconductor device according to claim 8 electrically connected to the control circuit.

12. The liquid-discharge head substrate according to claim 11 , wherein the plurality of discharging elements is arranged in a first direction.

13. The liquid-discharge head substrate according to claim 12 , wherein the resistor element has a shape having a longitudinal direction extending in a second direction crossing the first direction.

14. A liquid-discharge head comprising:

a recording unit including the liquid-discharge head substrate according to claim 11 and a plurality of discharge ports arranged in such a manner as to each correspond to a different one of the plurality of discharging elements of the liquid-discharge head substrate; and

an ink container attached to the recording unit.

15. A liquid-discharge device comprising:

the liquid-discharge head according to claim 14 ;

a carriage to which the liquid-discharge head is mounted; and

a guide used for moving the carriage.

16. A semiconductor device comprising:

a transistor connected to a terminal having a first potential;

an anti-fuse element connected between the transistor and a terminal having a second potential different from the first potential; and

a resistor element connected in parallel with the anti-fuse element between the transistor and the terminal having the second potential,

wherein a wiring for connecting the transistor and the anti-fuse element has a resistance smaller than a resistance of a wiring for connecting the transistor and the resistor element.

17. The semiconductor device according to claim 16 , wherein the wiring for connecting the transistor and the anti-fuse element has a length smaller than a length of the wiring for connecting the transistor and the resistor element.

18. The semiconductor device according to claim 16 ,

wherein a channel forming region of the transistor is formed in a semiconductor substrate, and

wherein the resistor element includes a semiconductor region formed in the semiconductor substrate.

19. A liquid-discharge head substrate comprising:

a plurality of discharging elements configured to discharge liquid;

a control circuit electrically connected to the plurality of discharging elements; and

the semiconductor device according to claim 16 electrically connected to the control circuit.

20. The liquid-discharge head substrate according to claim 16 , wherein the plurality of discharging elements is arranged in a first direction.

21. The liquid-discharge head substrate according to claim 20 , wherein the resistor element has a shape having a longitudinal direction extending in a second direction crossing the first direction.

22. A liquid-discharge head comprising:

a recording unit including the liquid-discharge head substrate according to claim 16 and a plurality of discharge ports arranged in such a manner as to each correspond to a different one of the plurality of discharging elements of the liquid-discharge head substrate; and

an ink container attached to the recording unit.

23. A liquid-discharge device comprising:

the liquid-discharge head according to claim 22 ;

a carriage to which the liquid-discharge head is mounted; and

a guide used for moving the carriage.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 30, 2017
From: FUJII, KAZUNARI; NEGISHI, TOSHIO
To: CANON KABUSHIKI KAISHA
Reel/Frame 043977/0250 →
Priority Claims (1)
JP 2016-169618 · Aug 31, 2016 · national
Continuity (1)
Related Publication 20180061826A1 · Mar 1, 2018