Solid-state imaging device, method of manufacturing the same, and electronic apparatus
A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.
1. A solid-state imaging device comprising:
a semiconductor substrate having a first surface located at a light incident side of the semiconductor substrate and a second surface opposite to the first surface;
an organic photoelectric conversion unit above the first surface of the semiconductor substrate, the organic photoelectric conversion unit including an organic photoelectric conversion layer between an upper electrode and a lower electrode;
a semiconductor film above the first surface of the semiconductor substrate,
wherein a charge converted by the organic photoelectric conversion layer is accumulated at a part of the semiconductor film, and
wherein the semiconductor film is electrically connected to a gate electrode of an amplifier transistor disposed at the second surface of the semiconductor substrate; and
a conductive plug formed through the semiconductor substrate,
wherein the semiconductor film is electrically connected to the gate electrode of the amplifier transistor via the conductive plug.
2. A solid-state imaging device comprising:
a semiconductor substrate having a first surface located at a light incident side of the semiconductor substrate and a second surface opposite to the first surface;
an organic photoelectric conversion unit above the first surface of the semiconductor substrate, the organic photoelectric conversion unit including an organic photoelectric conversion layer between an upper electrode and a lower electrode; and
a semiconductor film above the first surface of the semiconductor substrate,
wherein a charge converted by the organic photoelectric conversion layer is accumulated at a part of the semiconductor film, and wherein the semiconductor film includes an oxide semiconductor.
3. The solid-state imaging device according to claim 2 , wherein the semiconductor film includes at least one of zinc (Zn) and Tin (Sn).
4. A solid-state imaging device comprising:
a semiconductor substrate having a first surface located at a light incident side of the semiconductor substrate and a second surface opposite to the first surface;
an organic photoelectric conversion unit above the first surface of the semiconductor substrate, the organic photoelectric conversion unit including an organic photoelectric conversion layer between an upper electrode and a lower electrode;
a semiconductor film above the first surface of the semiconductor substrate,
wherein a charge converted by the organic photoelectric conversion layer is accumulated at a part of the semiconductor film;
an electrode between the first surface of the semiconductor substrate and the semiconductor film; and
an insulating layer between the electrode and the semiconductor film,
wherein the electrode transfers charge, and
wherein different voltages are respectively applied to the lower electrode, the upper electrode and the electrode.
5. A solid-state imaging device comprising:
a semiconductor substrate having a first surface located at a light incident side of the semiconductor substrate and a second surface opposite to the first surface
an organic photoelectric conversion unit above the first surface of the semiconductor substrate, the organic photoelectric conversion unit including an organic photoelectric conversion layer between a lower electrode and an upper electrode; and
a semiconductor film above the first surface of the semiconductor substrate,
wherein the semiconductor film is electrically connected to a gate electrode of an amplifier transistor disposed at the second surface of the semiconductor substrate, and
wherein at least a part of the semiconductor film is above a top surface of the lower electrode.
6. The solid-state imaging device according to claim 5 , further comprising a conductive plug formed through the semiconductor substrate,
wherein the semiconductor film is electrically connected to the gate electrode of the amplifier transistor via the conductive plug.
7. A solid-state imaging device comprising:
a semiconductor substrate having a first surface located at a light incident side of the semiconductor substrate and a second surface opposite to the first surface
an organic photoelectric conversion unit above the first surface of the semiconductor substrate, the organic photoelectric conversion unit including an organic photoelectric conversion layer between a lower electrode and an upper electrode; and
a semiconductor film above the first surface of the semiconductor substrate,
wherein the semiconductor film is electrically connected to a gate electrode of an amplifier transistor disposed at the second surface of the semiconductor substrate, and
wherein the semiconductor film includes an oxide semiconductor.
8. The solid-state imaging device according to claim 7 , wherein the semiconductor film includes at least one of zinc (Zn) and Tin (Sn).
9. A solid-state imaging device comprising:
a semiconductor substrate having a first surface located at a light incident side of the semiconductor substrate and a second surface opposite to the first surface
an organic photoelectric conversion unit above the first surface of the semiconductor substrate, the organic photoelectric conversion unit including an organic photoelectric conversion layer between a lower electrode and an upper electrode;
a semiconductor film above the first surface of the semiconductor substrate,
wherein the semiconductor film is electrically connected to a gate electrode of an amplifier transistor disposed at the second surface of the semiconductor substrate;
an electrode between the semiconductor substrate and the semiconductor film; and
an insulating layer between the electrode and the semiconductor layer,
wherein the electrode transfers charge, and
wherein different voltages are respectively applied to the lower electrode, the upper electrode and the electrode.
10. A solid-state imaging device comprising:
a semiconductor substrate having a first surface located at a light incident side of the semiconductor substrate and a second surface opposite to the first surface;
an organic photoelectric conversion unit above the first surface of the semiconductor substrate, the organic photoelectric conversion unit including an organic photoelectric conversion layer between a lower electrode and an upper electrode; and
a semiconductor film above the first surface of the semiconductor substrate,
wherein a channel region of the semiconductor film is above a top surface of the lower electrode.
11. The solid-state imaging device according to claim 10 , wherein the semiconductor film accumulates charge.
12. The solid-state imaging device according to claim 10 , further comprising a photoelectric conversion unit in the semiconductor substrate.
13. The solid-state imaging device according to claim 10 , further comprising:
an electrode between the semiconductor substrate and the semiconductor film; and
an insulating layer between the electrode and the semiconductor layer,
wherein the electrode transfers charge.
14. The solid-state imaging device according to claim 10 , wherein the semiconductor film is electrically connected to a gate electrode of an amplifier transistor disposed at the second surface of the semiconductor substrate.
15. The solid-state imaging device according to claim 14 , further comprising a conductive plug formed through the semiconductor substrate,
wherein the semiconductor film is electrically connected to the gate electrode of the amplifier transistor via the conductive plug.
16. The solid-state imaging device according to claim 10 , wherein multi wiring layers are disposed on the second surface of the semiconductor substrate.
17. The solid-state imaging device according to claim 10 , wherein the semiconductor film includes an oxide semiconductor.
18. The solid-state imaging device according to claim 17 , wherein the semiconductor film includes at least one of zinc (Zn) and Tin (Sn).
19. The solid-state imaging device according to claim 13 , wherein different voltages are respectively applied to the lower electrode, the upper electrode and the electrode.