Thin film fabricating apparatus, and manufacturing method of organic light emitting device using the same, and organic light emitting device manufactured using the same
A thin film fabricating apparatus includes an electrode part which sprays a thin film material as electrified spray particles, a substrate holder disposed facing the electrode part and holding a substrate to be provided with a thin film, and a mask disposed between the electrode part and the substrate holder and provided with a plurality of pattern grooves, where the mask and the substrate are applied with a mask voltage (Vm) and a substrate voltage (V 0 ), respectively, the mask voltage (Vm) is a variable voltage, and the mask voltage (Vm) has the same polarity as the polarity of spray particles.
1. A thin film fabricating apparatus comprising:
an electrode part which sprays a thin film material as electrified spray particles;
a substrate holder which faces the electrode part and holds a substrate provided with a thin film;
a mask disposed between the electrode part and the substrate holder and provided with a plurality of pattern grooves, and
a plurality of spacers including an insulating material is disposed between the mask and the substrate,
wherein the mask and the substrate are applied with a mask voltage (Vm) and a substrate voltage (V 0 ), respectively,
the mask voltage (Vm) is a variable voltage, and
the mask voltage (Vm) has a same polarity as the polarity of the spray particles, and
wherein, when the voltage of the electrode part nearest to the mask is referred to as a dominant voltage (Va), a shortest distance between the mask and the electrode part is referred to as L, and the shortest distance (CL) between the substrate and the mask is referred to as CL, and
wherein the thin film is not disposed on the substrate when the mask voltage (Vm) is greater than or equal to a shutter voltage (Vms) which satisfies the following equation:
Vms
=
V
0
+
1.07
×
10
-
8
×
Va
L
×
CL
1.2
.
2. The thin film fabricating apparatus of claim 1 , wherein the electrode part comprises a plurality of needle electrodes, and
the dominant voltage (Va) is applied to the plurality of needle electrodes.
3. The thin film fabricating apparatus of claim 1 , wherein the electrode part comprises:
a plurality of needle electrodes; and
a plurality of ring electrodes disposed at positions corresponding to the plurality of needle electrodes, respectively,
wherein the dominant voltage (Va) is applied to the plurality of ring electrodes.
4. The thin film fabricating apparatus of claim 3 , wherein each needle electrode is disposed on a center axis of the ring electrode.
5. The thin film fabricating apparatus of claim 1 , wherein the electrode part comprises:
a plurality of needle electrodes;
a plurality of ring electrodes arranged with the plurality of needle electrodes to dispose the centers of the plurality of ring electrodes on extension lines of the needle electrodes; and
a grid electrode disposed between the plurality of ring electrodes and the mask,
wherein the dominant voltage (Va) is applied to the grid electrode.
6. The thin film fabricating apparatus of claim 1 , wherein an absolute value of the dominant voltage (Va) is greater than an absolute value of the shutter voltage (Vms).
7. The thin film fabricating apparatus of claim 1 , wherein the shutter voltage (Vms), the substrate voltage (V 0 ), and the dominant voltage (Va) satisfy the following inequation:
(
Vms
-
V
0
)
Va
>
0.
8. The thin film fabricating apparatus of claim 1 , wherein the shortest distance between the substrate and the mask is 30 micrometers to 3 millimeters.
9. The thin film fabricating apparatus of claim 1 , wherein the mask has a thickness of 50 micrometers to 5 millimeters.
10. The thin film fabricating apparatus of claim 1 , wherein an absolute value of the shutter voltage is 1.5 volts to 100 volts.
11. The thin film fabricating apparatus of claim 1 , wherein an absolute value of dominant voltage is 500 volts to 20,000 volts.
12. The thin film fabricating apparatus of claim 1 , wherein an absolute value of the substrate voltage (V 0 ) is greater than 0 volt and less than or equal to 100 volts.
13. The thin film fabricating apparatus of claim 1 , wherein the shortest distance between the mask and the electrode part is 0.005 meter to 0.3 meter.
14. The thin film fabricating apparatus of claim 1 , when a time for forming the thin film on the substrate is referred to as an aging time,
wherein the mask voltage (Vm) shows a periodic waveform for the aging time.
15. The thin film fabricating apparatus of claim 14 , wherein an absolute value of the mask voltage (Vm) is 1 volt to 100 volts for the aging time.
16. The thin film fabricating apparatus of claim 14 , wherein the mask voltage (Vm) comprises
a first voltage (Vm 1 ) and
a second voltage (Vm 2 ) of greater than an absolute value of the first voltage (Vm 1 ).
17. The thin film fabricating apparatus of claim 16 , wherein the mask voltage (Vm) further comprises
a third voltage (Vm 3 ) of greater than an absolute value of the second voltage (Vm 2 ).
18. The thin film fabricating apparatus of claim 16 , wherein the first voltage (Vm 1 ) is applied for greater than or equal to 75 percent of the aging time of the mask voltage (Vm).
19. The thin film fabricating apparatus of claim 18 , wherein the second voltage (Vm 2 ) is applied for 1 percent to 20 percent of the aging time of the mask voltage (Vm).
20. The thin film fabricating apparatus of claim 19 , wherein the third voltage (Vm 3 ) is applied for 0.1 percent to 5 percent of the aging time of the mask voltage (Vm).