Semiconductor device including electric and magnetic field shielding

1. A semiconductor device package, comprising:

a carrier having a top surface;

a first electronic component disposed on the top surface of the carrier;

a second electronic component disposed on the top surface of the carrier;

a first magnetic layer disposed on the top surface of the carrier and encapsulating the first electronic component, wherein the second electronic component is exposed from the first magnetic layer;

a second magnetic layer disposed on the first magnetic layer and covering a top surface of the first magnetic layer and a lateral surface of the first magnetic layer, wherein a permeability of the first magnetic layer is less than a permeability of the second magnetic layer; and

an electrically conductive layer disposed on the second magnetic layer and covering a top surface of the second magnetic layer, a lateral surface of the second magnetic layer and at least a portion of the top surface of the carrier.

2. The semiconductor device package according to claim 1 , wherein the permeability of the first magnetic layer is equal to or greater than 100 Henries per meter.

3. The semiconductor device package according to claim 1 , wherein a thickness of the first magnetic layer is equal to or greater than a thickness of the second magnetic layer.

4. The semiconductor device package according to claim 1 , wherein each of the first magnetic layer and the second magnetic layer comprises insulating ferrimagnetic particles.

5. The semiconductor device package according to claim 1 , wherein the second electronic component is exposed from the first magnetic layer and encapsulated by the second magnetic layer.

6. The semiconductor device package according to claim 1 , wherein a ratio of the permeability of the first magnetic layer to the permeability of the second magnetic layer is in a range including about 1:1.2 to about 1:5.

7. The semiconductor device package according to claim 1 , wherein the second magnetic layer covers at least another portion of the top surface of the carrier.

8. The semiconductor device package according to claim 3 , wherein a ratio of the thickness of the first magnetic layer to the thickness of the second magnetic layer is in a range including about 1:0.5 to about 1:1.

9. The semiconductor device package according to claim 4 , wherein the insulating ferrimagnetic particles of one or both of the first magnetic layer and the second magnetic layer comprise iron oxides.

10. A semiconductor device package, comprising:

a substrate;

a first electronic component disposed on the substrate;

a second electronic component disposed on the substrate;

a first layer including a first material doped with a magnetic second material, the first layer disposed on the substrate and encapsulating the first electronic component, wherein the second electronic component is exposed from the first layer; and

a second layer including a third material doped with a magnetic fourth material, the second layer disposed on the first layer and covering a top surface and a lateral surface of the first layer, and further encapsulating the second electronic component;

wherein a permeability of the first layer is equal to or greater than 100 Henries per meter, and the permeability of the first layer is less than a permeability of the second layer.

11. The semiconductor device package according to claim 10 , further comprising a conformal shield disposed on the second layer and covering a top surface and a lateral surface of the second layer.

12. The semiconductor device package according to claim 10 , wherein a ratio of a thickness of the first layer to a thickness of the second layer is in a range including about 1:0.5 to about 1:1.

13. The semiconductor device package according to claim 10 , wherein the magnetic second material is different from the magnetic fourth material.

14. A method of manufacturing a semiconductor device package, the method comprising:

(a) providing a carrier having a top surface;

(b) attaching a first electronic component and a second electronic component on the top surface of the carrier;

(c) forming a first magnetic layer on the top surface of the carrier, the first magnetic layer encapsulating the first electronic component and exposing the second electronic component;

(d) forming a second magnetic layer on the first magnetic layer, the second magnetic layer covering a top surface of the first magnetic layer and a lateral surface of the first magnetic layer, wherein a permeability of the first magnetic layer is less than a permeability of the second magnetic layer; and

(e) forming an electrically conductive layer on the second magnetic layer, the electrically conductive layer covering a top surface of the second magnetic layer, a lateral surface of the second magnetic layer and at least a portion of the top surface of the carrier.

15. The method according to claim 14 , wherein the permeability of the first magnetic layer is equal to or greater than 100 Henries per meter.

16. The method according to claim 14 , wherein each of the first magnetic layer and the second magnetic layer are doped with an insulating ferrimagnetic compound.

17. The method according to claim 14 , wherein the electrically conductive layer is doped with an electrically conductive material.

18. The method according to claim 14 , wherein a ratio of the permeability of the first magnetic layer to the permeability of the second magnetic layer is in a range including about 1:1.2 to about 1:5.