Light-emitting device with electrode extending layer
A light-emitting device includes a substrate; a light-emitting unit formed on the substrate, comprising a first conductivity type semiconductor; a second conductivity type semiconductor; an active layer formed between the first and the second conductivity type semiconductors; and an exposed region formed in the light-emitting unit, exposing the first conductivity type semiconductor; a first electrode extending layer formed on the first conductivity type semiconductor in the exposed region; a second electrode extending layer formed on the second conductivity type semiconductor; a transparent insulator, formed on the light-emitting unit and filled in the exposed region; a first electrode formed on the transparent insulator; and a plurality of conductive channel layers formed in the transparent insulator; wherein one of the plurality of conductive channel layers connects the first electrode and one of the first and the second electrode extending layers.
1. A light-emitting device, comprising:
a substrate;
a first light-emitting unit formed on the substrate, comprising:
a first conductivity type semiconductor;
a second conductivity type semiconductor;
an active layer formed between the first and the second conductivity type semiconductors; and
an exposed region formed in the first light-emitting unit, exposing the first conductivity type semiconductor;
a first electrode extending layer formed on the first conductivity type semiconductor in the exposed region;
a second electrode extending layer formed on the second conductivity type semiconductor;
a transparent insulator, formed on the first light-emitting unit and filled in the exposed region;
a first electrode formed on the transparent insulator, comprising a first pad and a first extending part extending from the first pad;
a plurality of conductive channel layers formed in the transparent insulator;
wherein one of the plurality of conductive channel layers connects the first extending part and one of the first and the second electrode extending layers;
wherein the first pad does not overlap the one of the first and the second electrode extending layers;
a second light-emitting unit or more light-emitting units separately formed on the substrate, wherein the first light-emitting unit and the second light-emitting unit or more light-emitting units compose a plurality of light-emitting units, and wherein each of the plurality of light-emitting units comprises the first conductivity type semiconductor, the second conductivity type semiconductor, the active layer and the exposed region;
a plurality of the first electrode extending layers and a plurality of the second electrode extending layers formed on the plurality of light-emitting units;
a second electrode;
a trench formed between any two adjacent light-emitting units; and
an electrical connecting layer;
wherein the first electrode is formed on one of the plurality of light-emitting units and the second electrode is formed on another one of the plurality of light-emitting units;
wherein the transparent insulator is formed on the plurality of light-emitting units;
wherein the electrical connecting layer is formed on the transparent insulator, and connects the conductive channel layers on different light-emitting units to electrically connect the plurality of light-emitting units; and
wherein the transparent insulator comprises a top surface opposite to the substrate, and the first electrode, the second electrode and the electrical connecting layer are formed on and contact the top surface.
2. The light-emitting device of claim 1 , wherein the transparent insulator is filled in the trench and simultaneously covers the plurality of light-emitting units to form a planar upper surface.
3. The light-emitting device of claim 2 , wherein a shortest distance between the planar upper surface and the light-emitting units is more than 10μm.
4. The light-emitting device of claim 1 , wherein the first and the second electrode extending layers have different conductivity types; the first electrode electrically connects the electrode extending layers with the same conductivity type or different conductivity types on different light-emitting units via the conductive channel layers; and the second electrode electrically connects the electrode extending layers with the same conductivity type or different conductivity types on different light-emitting units via the conductive channel layers.
5. The light-emitting device of claim 1 , wherein the transparent insulator comprises a multi-layer structure.
6. The light-emitting device of claim 5 , wherein the multi-layer structure comprises:
a first transparent insulator formed on side surfaces of the adjacent light-emitting units;
a second transparent insulator, formed on the first transparent insulator and filled in the trench; and
a third transparent insulator, covering the second transparent insulator and the plurality of light-emitting units.
7. The light-emitting device of claim 6 , wherein second transparent insulator comprises spin-on-glass (SOG).
8. The light-emitting device of claim 1 , wherein a connection of the plurality of light-emitting units comprises a series electrical connection, a parallel electrical connection or a series-parallel electrical connection.
9. The light-emitting device of claim 8 , wherein the plurality of light-emitting units forms an AC LED.
10. The light-emitting device of claim 9 , further comprising:
a first metal layer formed on a surface of the substrate on which the plurality of light-emitting units is formed; and
a second metal layer formed on the transparent insulator, parallel with and overlapping the first metal layer;
wherein the first metal layer and the second metal layer electrically connect the light-emitting units via the conductive channel layers.
11. The light-emitting device of claim 10 , wherein the first metal layer and the second metal layer form a capacitance between the light-emitting units.