Silicon carbide semiconductor device and method for manufacturing same

1. A silicon carbide semiconductor device comprising:

a drift layer of a first conductivity type, made of silicon carbide;

a body region of a second conductivity type, provided on said drift layer, the second conductivity type being different from the first conductivity type;

a source region of the first conductivity type, provided on said body region;

a source electrode connected to said source region;

a gate insulating film provided on a side surface and a bottom surface of a trench penetrating said body region and said source region;

a gate electrode provided in said trench with said gate insulating film interposed therebetween; and

a trench-bottom-surface protective layer of the second conductivity type, provided below the bottom surface of said trench in said drift layer and electrically connected to said source electrode, said trench-bottom-surface protective layer including

a high-concentration protective layer that is disposed below the body region, and

a first low-concentration protective layer provided below said high-concentration protective layer and having an impurity concentration lower than that of said high-concentration protective layer.

2. The silicon carbide semiconductor device according to claim 1 , wherein

when it is assumed that L 1 represents a thickness of said first low-concentration protective layer, L 2 represents a thickness of said high-concentration protective layer, and d 1 represents a thickness of a depletion layer which extends from an interface between said first low-concentration protective layer and said drift layer to said trench-bottom-surface protective layer when a reverse voltage is applied to said silicon carbide semiconductor device, and when d 2 ={−d 1 } is assumed, conditions

d 1 >L 1 , and d 2 >0

are satisfied.

3. The silicon carbide semiconductor device according to claim 1 , wherein

said high-concentration protective layer includes at least one region in which an impurity concentration is constant in a depth direction, and said first low-concentration protective layer includes at least one region in which an impurity concentration is smaller than that of said high-concentration protective layer and constant in a depth direction.

4. The silicon carbide semiconductor device according to claim 1 , wherein

said high-concentration protective layer has a mountain-shaped peak of the impurity concentration in the depth direction, and said first low-concentration protective layer has a mountain-shaped peak of the impurity concentration smaller than said mountain-shaped peak of said high-concentration protective layer, in the depth direction.

5. The silicon carbide semiconductor device according to claim 1 , wherein

an impurity concentration profile of said first low-concentration protective layer includes at least one portion in which a magnitude of a gradient of the profile increases toward the depth direction.

6. The silicon carbide semiconductor device according to claim 1 , wherein

the impurity concentration of said high-concentration protective layer is more than or equal to twice as high as the impurity concentration of said first low-concentration protective layer.

7. The silicon carbide semiconductor device according to claim 1 , wherein

a width of said first low-concentration protective layer is smaller than a width of said high-concentration protective layer.

8. The silicon carbide semiconductor device according to claim 1 , wherein

a width of said first low-concentration protective layer is larger than a width of said high-concentration protective layer.

9. The silicon carbide semiconductor device according to claim 1 , wherein

said trench-bottom-surface protective layer is composed of two layers of said high-concentration protective layer and said first low-concentration protective layer.

10. The silicon carbide semiconductor device according to claim 1 , wherein

said trench-bottom-surface protective layer includes a second low-concentration protective layer provided above said high-concentration protective layer and having an impurity concentration lower than the impurity concentration of said high-concentration protective layer.

11. The silicon carbide semiconductor device according to claim 10 , wherein

said second low-concentration protective layer has a peak of the impurity concentration smaller than a peak in said high-concentration protective layer.

12. A method for manufacturing a silicon carbide semiconductor device comprising the steps of:

preparing a semiconductor substrate provided with a drift layer of a first conductivity type, said drift layer being made of silicon carbide;

forming a body region of a second conductivity type on said drift layer, the second conductivity type being different from the first conductivity type;

forming a source region of the first conductivity type on a surface of said body region;

forming a trench penetrating said body region from a surface of said source region; and

forming, at a bottom surface of said trench, a high-concentration protective layer of the second conductivity type that is disposed below the body region and a first low-concentration protective layer of the second conductivity type below said high-concentration protective layer by performing ion implantations a plurality of times with different acceleration energies, said first low-concentration protective layer having an impurity concentration lower than an impurity concentration of said high-concentration protective layer.

13. A method for manufacturing a silicon carbide semiconductor device comprising the steps of:

preparing a semiconductor substrate provided with a drift layer of a first conductivity type, said drift layer being made of silicon carbide;

forming a body region of a second conductivity type on said drift layer, the second conductivity type being different from the first conductivity type;

forming a source region of the first conductivity type on a surface of said body region;

forming a trench penetrating said body region from a surface of said source region;

forming a first low-concentration protective layer of the second conductivity type on a bottom surface of said trench by epitaxial growth, and

forming a high-concentration protective layer of the second conductivity type having an impurity concentration higher than an impurity concentration of said first low-concentration protective layer on an upper surface of said first low-concentration protective layer by epitaxial growth and disposed below the body region.